ZXM61P03F_05 ZETEX | Alldatasheet

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Technical content

1 SEMICONDUCTORS

30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.35/H9024; ID=-1.1A

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • SOT23 package

APPLICATIONS

  • DC - DC converters
  • Power management functions
  • Disconnect switches
  • Motor control

ORDERING INFORMATION

(inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXM61P03FTA 7 8 embossed 3,000 ZXM61P03FTC 13 8 embossed 10,000 DEVICE MARKING P03 SOT23 Pin out Top view

PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 200 °C/W Junction to Ambient (b) R θJA 155 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t/H110885 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -30 V Gate- Source Voltage V GS /H1100620 V Continuous Drain Current (VGS=-10V; TA=25°C)(b) (VGS=-10V; TA=70°C)(b) ID -1.1 -0.9 A Pulsed Drain Current (c) I DM -4.3 A Continuous Source Current (Body Diode)(b) I S -0.88 A Pulsed Source Current (Body Diode)(c) I SM -4.3 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 625 mW mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 806 6.4 mW mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS -30 V ID=-250 µA, V GS=0V Zero Gate Voltage Drain Current I DSS -1 µA VDS=-30V, V GS=0V Gate-Body Leakage I GSS /H11006100 nA V GS=/H1100620V, V DS=0V Gate-Source Threshold Voltage V GS(th) -1.0 V ID=-250 µA, V DS=V GS Static Drain-Source On-State Resistance (1) R DS(on) 0.35 0.55 Ω Ω VGS=-10V, I D=-0.6A VGS=-4.5V, I D=-0.3A Forward Transconductance (3) g fs 0.44 S V DS=-10V,I D=-0.3A DYNAMIC (3) Input Capacitance C iss 140 pF VDS=-25 V, V GS=0V, f=1MHzOutput Capacitance C oss 45 pF Reverse Transfer Capacitance C rss 20 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 1.9 ns VDD =-15V, I D=-0.6A RG=6.2 Ω,R D=25 Ω (Refer to test circuit) Rise Time t r 2.9 ns Turn-Off Delay Time t d(off) 8.9 ns Fall Time t f 5.0 ns Total Gate Charge Q g 4.8 nC VDS=-24V,V GS=-10V, ID=-0.6A (Refer to test circuit) Gate-Source Charge Q gs 0.62 nC Gate Drain Charge Q gd 1.3 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD -0.95 V T j=25°C, I S=-0.6A, VGS=0V Reverse Recovery Time (3) t rr 14.8 ns T j=25°C, I F=-0.6A, di/dt= 100A/ µs Reverse Recovery Charge(3) Q rr 7.7 nC NOTES: (1) Measured under pulsed conditions. Width=300µs. Duty cycle /H113492%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

0.1 10 100 0 3 -VDS - Drain Source Voltage (V) Capacitance v Drain-Source Voltage 200 )Fp( ecnaticapaC - C ID=-0.6A V- SG )V( egatloV ecruoS-etaG - Q -Charge (nC) Gate-Source Voltage v Gate Charge VDS=-15V Coss Crss Vgs=0V f=1MHz Ciss 300 250 150 100 0.5 1 1.5 2 2.5 3.5 4 4.5 VDS=-24V Current regulator Charge Gate charge test circuit Switching time test circuit Basic gate charge waveform Switching time waveforms D.U.T 50k12V Same as D.U.T VGS VGS VDS VG QGS QGD QG VGS 90% 10% t(on) t(on) td(on)trtr td(off) VDS VCC RD RG VDS ID IG TYPICAL CHARACTERISTICS

Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2005 L N H G A C F BM K D 3 leads PACKAGE DETAILS mm inches0.8 0.031 0.9 0.035 0.95 0.037 2.0 0.079 PAD LAYOUT DETAILS DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Max Max G 1.90 NOM 0.075 NOM /H5007/H5007 /H5007 PACKAGE DIMENSIONS