ZXM61P03F ZETEX | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

30V P-CHANNEL ENHANCEMENT MODE MOSFET ZXM61P03F SUMMARY V(BR)DSS=-30V; RDS(ON)=0.35V; ID=-1.0A

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • SOT23 package

APPLICATIONS

  • DC - DC Converters
  • Power Management Functions
  • Disconnect switches
  • Motor control

ORDERING INFORMATION

(inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXM61P03FTA 7 8mm embossed 3000 units ZXM61P03FTC 13 8mm embossed 10000 units DEVICE MARKING

  • P03 Top View SOT23 PROVISIONAL ISSUE A - JULY 1999

PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 200 °C/W Junction to Ambient (b) R θJA 155 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t<5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -30 V Gate- Source Voltage V GS ± 20 V Continuous Drain Current (V GS=-10V; T A=25°C)(b) ( V GS=-10V; T A=70°C)(b) ID -1.1 -0.9 A Pulsed Drain Current (c) I DM -4.3 A Continuous Source Current (Body Diode)(b) I S -0.88 A Pulsed Source Current (Body Diode)(c) I SM -4.3 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 625 mW mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 806 6.4 mW mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C PROVISIONAL ISSUE A - JULY 1999

0.1 100 0.0001 0.1 10 08 0 1 6 0 -VDS - Drain-Source Voltage (V) Safe Operating Area 10m 100m -ID - Drain Current (A) D=0.2 D=0.1 Thermal Resistance (°C/W) 180 80 D=0.5 Pulse Width (s) Transient Thermal Impedance Max Power Dissipation (Watts) 1.0 0.6 T - Temperature (°C) Derating Curve Refer Note (a) Single PulseD=0.05 Thermal Resistance (°C/W) Transient Thermal Impedance 0.00010 Pulse Width (s) 10 1000 120 240 Single Pulse D=0.5 D=0.05 D=0.2 D=0.1 101 0.8 0.4 0.2 20 40 60 100 120 140 Refer Note (b) Refer Note (b) Refer Note (a) 100 120 140 160 0.001 0.01 1 200 160 0.001 0.01 0.1 1 100 CHARACTERISTICS DC 100ms 10ms 1ms 100us Refer Note (a) PROVISIONAL ISSUE A - JULY 1999

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS -30 V ID=-250 µ A, V GS=0V Zero Gate Voltage Drain Current I DSS -1 µA VDS=-30V, V GS=0V Gate-Body Leakage I GSS ±100 nA VGS=± 20V, V DS=0V Gate-Source Threshold Voltage V GS(th) -1.0 V ID=-250 µA, V DS= V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.35 0.55 Ω Ω VGS=-10V, I D=-0.6A VGS=-4.5V, I D=-0.3A Forward Transconductance (3) g fs 0.44 S V DS=-10V,I D=-0.3A DYNAMIC (3) Input Capacitance C iss 140 pF VDS=-25 V, V GS=0V, f=1MHzOutput Capacitance C oss 45 pF Reverse Transfer Capacitance C rss 20 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 1.9 ns VDD =-15V, I D=-0.6A RG=6.2 Ω , RD=25 Ω (Refer to test circuit) Rise Time t r 2.9 ns Turn-Off Delay Time t d(off) 8.9 ns Fall Time t f 5.0 ns Total Gate Charge Q g 4.8 nC VDS=-24V,V GS=-10V, ID=-0.6A (Refer to test circuit) Gate-Source Charge Q gs 0.62 nC Gate Drain Charge Q gd 1.3 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD -0.95 V T j=25°C, I S=-0.6A, VGS=0V Reverse Recovery Time (3) t rr 14.8 ns T j=25°C, I F=-0.6A, di/dt= 100A/ µs Reverse Recovery Charge(3) Q rr 7.7 nC (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - JULY 1999

0.1 1 100 1.5 2.5 0.1 1 10 0.2 0.8 1.4 +200+100-100 0.1 10 100 -VDS - Drain-Source Voltage (V) Output Characteristics 100m -ID - Drain Current (A) -VGS VDS=-10V -ID - Drain Current (A) 10m -VGS - Gate-Source Voltage (V) Typical Transfer Characteristics RDS(on) - Drain-Source On-Resistance (Ω ) 100m -ID - Drain Current (A) On-Resistance v Drain Current -ID - Drain Current (A) 100m -VDS - Drain-Source Voltage (V) Output Characteristics Normalised RDS(on) and VGS(th) 1.7 1.1 0.5 Tj - Junction Temperature (°C) Normalised RDS(on) and VGS(th) v Temperature -ISD - Reverse Drain Current (A) 10m -VSD - Source-Drain Voltage (V) Source-Drain Diode Forward Voltage T=+150°C T=+25°C T=+150°C VGS=-10V T=+25°C RDS(on) ID=-0.6A VGS=VDS ID=-250uA VGS(th) 0.4 0.6 1.0 1.2 100m Vg=-5V 1.5 1.3 0.9 0.7 03.5 4.5 100m 9V 8V 7V 6V -VGS7V8V 10V +150°C+25°C 9V 10V Vg=-10V Vg=-3V TYPICAL CHARACTERISTICS PROVISIONAL ISSUE A - JULY 1999

0.1 10 100 0 3 -VDS - Drain Source Voltage (V) Capacitance v Drain-Source Voltage 200 C - Capacitance (pF) ID=-0.6A -VGS - Gate-Source Voltage (V) Q -Charge (nC) Gate-Source Voltage v Gate Charge VDS=-15V Coss Crss Vgs=0V f=1MHz Ciss 300 250 150 100 0.5 1 1.5 2 2.5 3.5 4 4.5 VDS=-24V Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit ZXM61P03F PROVISIONAL ISSUE A - JULY 1999

N PACKAGE DIMENSIONS PAD LAYOUT DETAILS DIM Millimetres Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059 G NOM 1.9 NOM 0.075 K 0.01 0.10 0.0004 0.004 L 2.10 2.50 0.0825 0.0985 N NOM 0.95 NOM 0.037 ZXM61P03F Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by Streitfeldstraße 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide Germany USA Kwai Fong, Hong Kong  Zetex plc 1999 Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611 Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PROVISIONAL ISSUE A - JULY 1999