ZX5T949Z ZETEX | Alldatasheet

Document overview

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Technical content

BVCEO = -30V : RSAT = 24m ; IC = -5.5A

DESCRIPTION

low saturation 30V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions.

FEATURES

  • 5.5 Amps continuous current
  • Up to 20 Amps peak current
  • Very low saturation voltages
  • Exceptional gain linearity down to 10mA
  • Excellent high current gain hold up

APPLICATIONS

  • DC - DC converters
  • MOSFET gate drivers
  • Charging circuits
  • Power switches
  • Motor control DEVICE MARKING
  • 949 ZX5T949Z ISSUE 3 - DECEMBER 2004 MPPS™ 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SOT89 PINOUT TOP VIEW DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZX5T949ZTA 12mm embossed 1000 units

ORDERING INFORMATION

-50 V Collector-emitter voltage BVCEO -30 V Emitter-base voltage BVEBO V Continuous collector current (a) IC -5.5 A Peak pulse current ICM -20 A Power dissipation at TA =25°C (a) Linear derating factor PD 1.5 W mW/°C Power dissipation at TA =25°C (b) Linear derating factor PD 2.1 16.8 W mW/°C ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RJA °C/W Junction to Ambient (b) RJA °C/W NOTES (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. THERMAL RESISTANCE

MIN. TYP. MAX. UNIT CONDITIONS Collector-base breakdown voltage BVCBO -50 -70 V IC = -100A Collector-emitter breakdown voltage BVCER -50 -70 V IC = -1A, RB <1k Collector-emitter breakdown voltage BVCEO -30 -40 V IC = -10mA * Emitter-base breakdown voltage BVEBO -7.0 -8.0 V IE = -100A Collector cut-off current ICBO <-1 -20 -0.5 nA A VCB = -40V VCB = -40V,Tamb =100°C Collector cut-off current ICER R <1k <-1 -20 -0.5 nA A VCB = -40V VCB = -40V,Tamb =100°C Emitter cut-off current IEBO <-1 -10 nA VEB = -6V Collector-emitter saturation voltage VCE(SAT) -25 -35 -55 -55 -130 -40 -55 -80 -80 -175 mV mV mV mV mV IC = -0.5A, IB = -20mA * IC = -1A, IB = -100mA * IC = -1A, IB = -20mA * IC = -2A, IB = -200mA * IC = -5.5A, IB =-500mA * Base-emitter saturation voltage VBE(SAT) -970 -1070 mV IC = -5.5A, IB = -500mA * Base-emitter turn-on voltage VBE(ON) -860 -960 mV IC = -5.5A, VCE = -1V * Static forward current transfer ratio hFE 100 100 225 200 145 300 IC = -10mA, VCE = -1V * IC = -1A, VCE = -1V * IC = -5A, VCE = -1V * IC = -20A, VCE = -1V * Transition frequency fT 110 MHz IC = -100mA, VCE = -10V f = 50MHz Output capacitance COBO pF VCB = -10V, f = 1MHz * Switching times tON tOFF 230 ns IC = -1A, VCC = -10V, IB1 = -IB2 = -100mA ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.

Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquaters Zetex Semiconductors plc Lansdowne Road, Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2004 Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE OUTLINE PAD LAYOUT DETAILS DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max A 1.40 1.60 0.550 0.630 e 1.40 1.50 0.055 0.059 b 0.38 0.48 0.015 0.019 E 3.75 4.25 0.150 0.167 0.53 0.021 2.60 0.102 1.50 1.80 0.060 0.071 G 2.90 3.00 0.114 0.118 c 0.28 0.44 0.011 0.017 H 2.60 2.85 0.102 0.112 D 4.40 4.60 0.173 0.181 PACKAGE DIMENSIONS