ZX5T869G ZETEX | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

1 SEMICONDUCTORS

BVCEO = 25V : RSAT = 30m ; IC = 7A

DESCRIPTION

NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.

FEATURES

  • Extemely low equivalent on-resistance; RSAT = 30m at 6.5A
  • 7 amps continuous current
  • Up to 20 amps peak current
  • Very low saturation voltages
  • Excellent hFE characteristics up to 20 amps

APPLICATIONS

  • DC - DC converters
  • MOSFET gate drivers
  • Charging circuits
  • Power switches
  • Motor control DEVICE MARKING
  • X5T869 ZX5T869G ISSUE 2 - JUNE 2005 25V NPN LOW SATURATION TRANSISTOR IN SOT223 DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZX5T869GTA ZX5T869GTC 13” 12mm embossed 1000 units 4000 units

ORDERING INFORMATION

PARAMETER SYMBOL VALUE UNIT Junction to ambient (a) R/H9052JA 42 °C/W Junction to ambient (b) R/H9052JA 78 °C/W NOTES (a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BV CBO 60 V Collector-emitter voltage BV CEO 25 V Emitter-base voltage BV EBO 7V Continuous collector current I C 7A Peak pulse current I CM 20 A Power dissipation at T A =25°C (a) Linear derating factor PD 3.0 W mW/°C Power dissipation at T A =25°C (b) Linear derating factor PD 1.6 12.8 W mW/°C Operating and storage temperature range T j,T stg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT C ONDITIONS Collector-base breakdown voltage BV CBO 60 120 V I C=100 /H9262A Collector-emitter breakdown voltage BV CER 60 120 V I C=1/H9262A, RB /H113491k/H9024 Collector-emitter breakdown voltage BV CEO 25 35 V I C=10mA* Emitter-base breakdown voltage BV EBO 78 . 1 V I E=100 /H9262A Collector cut-off current I CBO 20 0.5 nA /H9262A VCB=50V VCB=50V, Tamb=100/H11034C Collector cut-off current I CER R/H113491k/H9024 0.5 nA /H9262A VCB=50V VCB=50V, Tamb=100/H11034C Emitter cut-off current I EBO 10 nA V EB=6V Collector-emitter saturation voltage V CE(SAT) 28 115 195 140 230 mV mV mV mV mV I C=500mA, I B=10mA* IC=1A, IB=100mA* IC=1A, IB=10mA* IC=2A, IB=10mA* IC=6.5A, IB=150mA* Base-emitter saturation voltage V BE(SAT) 980 1080 mV I C=6.5A, I B=150mA* Base-emitter turn-on voltage V BE(ON) 890 980 mV I C=6.5A, V CE=1V* Static forward current transfer ratio h FE 300 300 200 400 450 275 IC=10mA, V CE=1V* IC=1A, VCE=1V* IC=7A, VCE=1V* IC=20A, VCE=1V* Transition frequency f T 150 I C=100mA, V CE=10V f=50MHz Output capacitance C OBO 48 pF V CB=10V, f=1MHz* Switching times t ON tOFF 464 ns I C=1A, V CC=10V, IB1=-I B2=100mA ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) * Measured under pulsed conditions. Pulse width /H11349300/H9262s; duty cycle /H113492%.

Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2005 PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PAD LAYOUT DETAILS DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC PACKAGE DIMENSIONS