ZX3CD3S1M832 ZETEX | Alldatasheet

Document overview

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Technical content

PNP Transistor VCEO =-40V; RSAT = 104m ; C = -3A Schottky Diode VR = 40V; VF = 500mV (@1A); IC=1A

DESCRIPTION

Packaged in the new innovative 3mm x 2mm MLP this combination dual comprises an ultra low saturation PNP transistor and a 1A Schottky barrier diode. This excellent combination provides users with highly efficient performance in applications including DC-DC and charging circuits. Users will also gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels PCB area and device placement savings Lower package height (0.9mm nom) Reduced component count

FEATURES

  • Extremely Low Saturation Voltage (-220mV @-1A)
  • HFE characterised up to -3A
  • IC = -3A Continuous Collector Current
  • Extremely Low VF, fast switching Schottky
  • 3mm x 2mm MLP

APPLICATIONS

  • DC - DC Converters
  • Mobile Phones
  • Charging Circuits
  • Motor control DEVICE MARKING 3S1 ZX3CD3S1M832 ISSUE 2 - JUNE 2002 MPPS™ Miniature Package Power Solutions 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL Cathode Anode B C E DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZX3CD3S1M832TA 7 /H11541/H115418mm 3000 ZX3CD3S1M832TC 13 /H11541/H11541 8mm 10000

ORDERING INFORMATION

PARAMETER SYMBOL VALUE UNIT Transistor Collector-Base Voltage V CBO -50 V Collector-Emitter Voltage V CEO -40 V Emitter-Base Voltage V EBO -7.5 V Peak Pulse Current I CM -4 A Continuous Collector Current (a)(f) I C -3 A Base Current I B 1000 mA Power Dissipation at TA=25°C (a)(f) Linear Derating Factor PD 1.5 W mW/°C Power Dissipation at TA=25°C (b)(f) Linear Derating Factor PD 2.45 19.6 W mW/°C Power Dissipation at TA=25°C (c)(f) Linear Derating Factor PD 1 W mW/°C Power Dissipation at TA=25°C (d)(f) Linear Derating Factor PD 1.13 W mW/°C Power Dissipation at TA=25°C (d)(g) Linear Derating Factor PD 1.7 13.6 W mW/°C Power Dissipation at TA=25°C (e)(g) Linear Derating Factor PD 3 W mW/°C Storage Temperature Range T stg -55 to +150 °C Junction Temperature T j 150 °C ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(f) R θJA 83 °C/W Junction to Ambient (b)(f) R θJA 51 °C/W Junction to Ambient (c)(f) R θJA 125 °C/W Junction to Ambient (d)(f) R θJA 111 °C/W Junction to Ambient (d)(g) R θJA 73.5 °C/W Junction to Ambient (e)(g) R θJA 41.7 °C/W THERMAL RESISTANCE Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.

0.1 1 10 0.01 0.1 0 25 50 75 100 125 1500.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100µ 1m 10m 100m 1 10 100 1k0 0.1 1 10 1000 100 125 150 175 200 225 0.1 1 10 1000.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Note (a)(f) 100us 100ms VCE(SAT) Limited 1ms Safe Operating Area Single Pulse, Tamb=25°C DC 10ms IC Collector Current (A) VCE Collector-Emitter Voltage (V) 1oz Cu Note (d)(f) 1oz Cu Note (d)(g) 2oz Cu Note (a)(f) 2oz Cu Note (e)(g) Derating Curve Tamb=25°C Max Power Dissipation (W ) Temperature (°C) Note (a)(f) D=0.2 D=0.5 D=0.1 Transient Thermal Impedance Single Pulse D=0.05 Thermal Resistance (°C/W) Pulse Width (s) 1oz copper Note (g) 1oz copper Note (f)2oz copper Note (f) 2oz copper Note (g) Thermal Resistance v Board Area Thermal Resistance (°C/W) B o a r dC uA r e a( s q c m ) 1oz copper Note (g) 2oz copper Note (g) 1oz copper Note (f) 2oz copper Note (f) Power Dissipation v Board Area Tamb=25°C Tjm a x=150°C Continuous PD Dissipation (W) B o a r dC uA r e a( s q c m ) TRANSISTOR TYPICAL CHARACTERISTICS

PARAMETER SYMBOL VALUE UNIT Schottky Diode Continuous Reverse Voltage V R 40 V Forward Voltage @ I F=1000mA(typ) V F 425 A Forward Current I F 1850 mA Average Peak Forward Current D=50% I FAV 3A Non Repetitive Forward Current t ≤ 100 /H9262s t≤ 10ms IFSM 12 A A Power Dissipation at TA=25°C (a)(f) Linear Derating Factor PD 1.2 W mW/°C Power Dissipation at TA=25°C (b)(f) Linear Derating Factor PD 2 W mW/°C Power Dissipation at TA=25°C (c)(f) Linear Derating Factor PD 0.8 W mW/°C Power Dissipation at TA=25°C (d)(f) Linear Derating Factor PD 0.9 W mW/°C Power Dissipation at TA=25°C (d)(g) Linear Derating Factor PD 1.36 13.6 W mW/°C Power Dissipation at TA=25°C (e)(g) Linear Derating Factor PD 2.4 W mW/°C Storage Temperature Range T stg -55 to +150 °C Junction Temperature T j 125 °C ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(f) R θJA 83 °C/W Junction to Ambient (b)(f) R θJA 51 °C/W Junction to Ambient (c)(f) R θJA 125 °C/W Junction to Ambient (d)(f) R θJA 111 °C/W Junction to Ambient (d)(g) R θJA 73.5 °C/W Junction to Ambient (e)(g) R θJA 41.7 °C/W THERMAL RESISTANCE Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 400mW.

0 25 50 75 100 1250.0 0.5 1.0 1.5 2.0 2.5 3.0 100µ 1m 10m 100m 1 10 100 1k0 0.1 1 10 1000 100 125 150 175 200 225 0.1 1 10 1000.0 0.5 1.0 1.5 2.0 2.5 3.0 1oz Cu Note (d)(f) 1oz Cu Note (d)(g) 2oz Cu Note (a)(f) 2oz Cu Note (e)(g) Derating Curve Tamb=25°C Max Power Dissipation (W) Temperature (°C) Note (a)(f) D=0.2 D=0.5 D=0.1 Transient Thermal Impedance Single Pulse D=0.05 Thermal Resistance (°C/W) Pulse Width (s) 1oz copper Note (g) 1oz copper Note (f)2oz copper Note (f) 2oz copper Note (g) Thermal Resistance v Board Area Thermal Resistance (°C/W) B o a r dC uA r e a( s q c m ) 1oz copper Note (g) 2oz copper Note (g) 1oz copper Note (f) 2oz copper Note (f) Power Dissipation v Board Area Tamb=25°C Tjm a x=125°C Continuous PD Dissipation (W) Board Cu Area (sqcm) SCHOTTKY TYPICAL CHARACTERISTICS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. TRANSISTOR ELECTRICAL CHARACTERISTICS Collector-Base Breakdown Voltage V(BR)CBO -50 -80 V I C=-100 /H9262A Collector-Emitter Breakdown Voltage V(BR)CEO -40 -70 V I C=-10mA* Emitter-Base Breakdown Voltage V (BR)EBO -7.5 -8.5 V I E=-100 /H9262A Collector Cut-Off Current I CBO -25 nA V CB=-40V Emitter Cut-Off Current I EBO -25 nA V EB=-6V Collector Emitter Cut-Off Current I CES -25 nA V CES =-32V Collector-Emitter Saturation Voltage VCE(sat) -25 -150 -195 -210 -260 -40 -220 -300 -300 -370 mV mV mV mV mV I C=-0.1A, I B=-10mA* IC=-1A, I B=-50mA* IC=-1.5A, I B=-100mA* IC=-2A, I B=-200mA* IC=-2.5A, I B=-250mA* Base-Emitter Saturation Voltage V BE(sat) -0.97 -1.05 V I C=-2.5A, I B=-250mA* Base-Emitter Turn-On Voltage V BE(on) -0.89 -0.95 V I C=-2.5A, V CE=-2V* Static Forward Current Transfer Ratio hFE 300 300 180 480 450 290 130 I C=-10mA, V CE=-2V* IC=-0.1A, V CE=-2V* IC=-1A, V CE=-2V* IC=-1.5A, V CE=-2V* IC=-3A, V CE=-2V* Transition Frequency f T 150 190 MHz I C=-50mA, V CE=-10V f=100MHz Output Capacitance C obo 19 25 pF V CB=-10V, f=1MHz Turn-On Time t (on) 40 ns V CC=-15V, I C=-0.75A IB1=IB2=-15mATurn-Off Time t (off) 435 ns SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS Reverse Breakdown Voltage V (BR)R 40 60 V I R=300 /H9262A Forward Voltage V F 240 265 305 355 390 425 495 420 270 290 340 400 450 500 600 mV mV mV mV mV mV mV mV I F=50mA* IF=100mA* IF=250mA* IF=500mA* IF=750mA* IF=1000mA* IF=1500mA* IF=1000mA,T a=100°C* Reverse Current I R 50 100 /H9262AV R=30V Diode Capacitance C D 25 pF f=1MHz,V R=25V Reverse Recovery Time trr 12 ns switched from IF = 500mA to IR = 500mA Measured at IR = 50mA ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). *Measured under pulsed conditions.

1m 10m 100m 10.00 0.05 0.10 0.15 0.20 0.25 1m 10m 100m 10.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1m 10m 100m 1 0.4 0.6 0.8 1.0 1m 10m 100m 10.2 0.4 0.6 0.8 1.0 180 270 360 450 540 630 VCE(SAT)vIC Tamb=25°C IC/IB=100 IC/IB=50 IC/IB=10 VCE(SAT)(V) IC Collector Current (A) VBE(SAT)vIC IC/IB=50 100°C 25°C -55°C VCE(SAT)(V) IC Collector Current (A) hFE vIC VCE=2V -55°C 25°C 100°C Normalised Gain IC Collector Current (A) 25°C VCE(SAT)vIC IC/IB=50 100°C -55°C VBE(SAT)(V) IC Collector Current (A) VBE(ON)vIC VCE=2V 100°C 25°C -55°C VBE(ON)(V) IC Collector Current (A) Typical Gain (hFE) TRANSISTOR TYPICAL CHARACTERISTICS

SCHOTTKY TYPICAL CHARACTERISTICS

Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 uksales@zetex.com Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

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Hauppauge, NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex plc 2002 CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package) DIM MILLIMETRES INCHES DIM MILLIMETRES INCHES b1 0.17 0.30 0.0066 0.0118 L2 0.125 0.00 0.005 D 3.00 BSC 0.118 BSC r 0.075 BSC 0.0029 BSC D2 0.82 1.02 0.032 0.040 /H9052 0/H11034 12/H11034 0/H11034 12/H11034 D3 1.01 1.21 0.0397 0.0476 MLP832 PACKAGE DIMENSIONS