XP8081 PANASONIC | Alldatasheet

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Silicon N-channel junction FET (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For analog switching (Tr1)/switching (Tr2) n Features l Two elements incorporated into one package. l Reduction of the mounting area and assembly cost by one half. n Basic Part Number of Element l 2SK1103+UN1213 (transistors with built-in resistor) n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Marking Symbol: 9Z Internal Connection Parameter Symbol Ratings Unit Gate to drain voltage V GDS –50 V Drain current I D 20 mA Gate current I G 10 mA Collector to base voltage V CBO 50 V Collector to emitter voltage V CEO 50 V Collector current I C 100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Tr1 Overall Tr2 1 : Drain (Tr1) 4 : Emitter (Tr2) 2 : Source (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Gate (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) 2.1–0.1 0.2–0.05 0.650.65 2.0–0.10.9–0.1 0 to 0.1 0.2–0.1 0.7–0.1 0.2 0.12 +0.05 –0.02 Tr2 Tr1

Composite Transistors XP8081 n Electrical Characteristics (Ta=25˚C) l Tr1 l Tr2 Parameter Symbol Conditions min typ max Unit Collector to base voltage V CBO IC = 10mA, IE = 0 50 V Collector to emitter voltage V CEO IC = 2mA, IB = 0 50 V Collector cutoff current ICBO V CB = 50V , IE = 0 0.1 mA ICEO V CE = 50V , IB = 0 0.5 mA Emitter cutoff current I EBO V EB = 6V , IC = 0 0.1 mA Forward current transfer ratio hFE V CE = 10V , IC = 5mA 80 Collector to emitter saturation voltageV CE(sat) IC = 10mA, IB = 0.3mA 0.25 V Output voltage high level V OH V CC = 5V , VB = 0.5V , RL = 1kW 4.9 V Output voltage low level V OL V CC = 5V , VB = 3.5V , RL = 1kW 0.2 V Transition frequency f T V CB = 10V , IE = –1mA, f = 200MHz 150 MHz Input resistance R 1 –30% 47 +30% k W Resistance ratio R 1/R2 0.8 1.0 1.2 Parameter Symbol Conditions min typ max Unit Gate to drain voltage V GDS IG = –10mA, VDS = 0 –50 V Drain current I DSS V DS = 10V , VGS = 0 0.2 2.2 mA Gate cutoff current I GSS V GS = –30V, VDS = 0 –10 nA Gate to source cutoff voltage VGSC V DS = 10V , ID = 10mA –1.0 V Mutual conductance gm V DS = 10V , ID = 1mA, f = 1kHz 1.8 2.5 mS Drain resistance R DS(on) V DS = 10mV , VGS = 0 400 W Common source short-circuit input capacitanceC iss V DS = 10V , VGS = 0, f = 1MHz 7 pF Common source reverse transfer capacitanceC rss V DS = 10V , VGS = 0, f = 1MHz 1.5 pF Common source short-circuit output capacitanceC oss V DS = 10V , VGS = 0, f = 1MHz 1.5 pF

Common characteristics chart PT — Ta I D — V DS ID — V GS | Yfs | — VGS | Yfs | — ID C iss, Crss, Coss — V DS Characteristics charts of Tr2 IC — V CE V CE(sat) — IC hFE — IC XP8081 100 150 200 250 02 0 4 0 8 060 140 120100 160 Ambient temperature Ta (˚C) Total power dissipation PT (mW ) 06 15 24 3 Drain to source voltage VDS (V) Drain current ID (mA ) 0.5 1.0 1.5 2.5 2.0 Ta=25˚C –0.4V –0.3V –0.2V –0.1V VGS =0V Gate to source voltage VGS (V) Drain current ID (mA ) 0.5 1.0 1.5 2.5 2.0 Ta=–25˚C 25˚C 75˚C Forward transfer admittance |Yfs| (mS ) Gate to source voltage VGS (V) VDS =10V Ta=25˚C IDSS =10mA Forward transfer admittance |Yfs| (mS ) 0.5 1.0 1.5 2.5 2.0 02468 Drain current ID (mA ) VDS =10V Ta=25˚C IDSS =10mA 10 100 Common source short-circuit input capacitance, Common source reverse transfer capacitance, Common source short-circuit output capacitance C iss, Crss, Coss (pF) Drain to source voltage VDS (V) VGS =0 f=1MHz Ta=25˚C C iss C rss C oss 01 2 21 0 48 6 120 160 140 100 Collector to emitter voltage VCE (V) Collector current IC (mA ) Ta=25˚C IB=1.0mA 0.1mA 0.2mA 0.3mA 0.4mA 0.5mA 0.6mA 0.7mA 0.8mA 0.9mA 0.01 0.03 0.1 0.3 0.1 0.3 100 1 3 10 30 100 Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) IC /IB=10 Ta=75˚C25˚C –25˚C 100 200 300 400 350 250 150 10 30 100 300 1000 Forward current transfer ratio hFE Collector current IC (mA ) VCE =10V Ta=75˚C 25˚C –25˚C

Composite Transistors XP8081 0.1 0.3 1 3 10 30 100 Collector output capacitance Cob (pF) Collector to base voltage VCB (V) f=1MHz IE=0 Ta=25˚C 0.4 100 300 1000 3000 10000 Output current IO (µA) Input voltage VIN (V) VO =5V Ta=25˚C 0.01 0.03 0.1 0.3 0.1 0.3 100 1 3 10 30 100 Input voltage VIN (V) Output current IO (mA ) VO =0.2V Ta=25˚C C ob — V CB IO — V IN V IN — IO