PNZ147 PANASONIC | Alldatasheet
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1Publication date: April 2004 SHE00017BED PNZ147 (PN147) Silicon planar type For optical control systems ■ Features
- High sensitivity
- Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs
- Fast response: tr , tf = 3 µs (typ.)
- Small size designed for easier mounting to printed circuit board ■ Absolute Maximum Ratings Ta = 25°C Unit: mm Parameter Symbol Rating Unit Collector-emitter voltage (Base open) V CEO 20 V Emitter-collector voltage (Base open) V ECO 5V Collector current I C 20 mA Collector power dissipation P C 50 mW Operating ambient temperature T opr −25 to +85 °C Storage temperature T stg −30 to +100 °C 1: Collector 2: Emitter 50 Ω RL VCC Sig. out 10% 90% Sig. in tr tf (Input pulse) (Output pulse) tr: Rise time tf: Fall time Note) The part number in the parenthesis shows conventional part number. 2.8±0.2 3.2±0.3 0.5±0.1 (0.15) 45° 10.0 min. Type number : cathode mark (Green) 10.0 min. 3.2±0.3 (1.8) (1.8) (0.7) (0.7) 0.4±0.1 2.2±0.15 2.8±0.2 1.05±0.10.85±0.15 R0.9 (φ1.8) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%. 3. This device is designed be disregarded radiation. 5. *1: Source: Tungsten (color temperature 2 856 K) *2: Rank classification *3: Switching time measurement circuit Parameter Symbol Conditions Min Typ Max Unit Photocurrent *1 ICE(L)1 *2 VCE = 10 V, L = 2 lx 3 12 µA ICE(L)2 VCE = 10 V, L = 500 lx 3.5 mA Dark current I CEO VCE = 10 V 0.01 0.50 µA Peak emission wavelength λp VCE = 10 V 800 nm Half-power angle θ The angle from which photocurrent 24 ° becomes 50% Rise time *3 tr VCC = 10 V, ICE(L) = 5 mA, RL = 100 Ω 31 0 µs Fall time *3 tf 31 0 µs Collector-emitter saturation voltage *1 VCE(sat) ICE(L) = 1 mA, L = 1 000 lx 0.2 0.5 V ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Rank Q R S
0 2 04 06 08 0 1 0 0−20 2006 0 40 80 100−20 10−2 10−3 10−4 102 10−1 −40 0 40 80 120 VCE = 10 V T = 2 856 K 81 24 1 62 02 4 104 103 10 10 310210 102 VCE = 10 V Ta = 25°C T = 2 856 K VCE = 10 V Ta = 25°C 100 200 400 600 800 1 000 1 200 102 10−1 10 10 210−2 10−1 1 Ta = 25°C T = 2 856 K VCC = 10 V Ta = 25°C Collector power dissipation PC (mW) Ambient temperature Ta (°C) Photocurrent ICE(L) (mA) Collector-emitter voltage VCE (V) Photocurrent ICE(L) (µA) Illuminance L (lx) Relative sensitivity ∆S (%) Wavelength λ (nm) Photocurrent ICE(L) (mA) Ambient temperature Ta (°C) Dark current ICEO (µA) Ambient temperature Ta (°C) Rise time tr , Fall time tf (µs) Photocurrent ICE(L) (mA) 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° VCE = 10 V 100 Relative sensitivity ∆S (%) 500 lx 250 lx 100 lx 1 000 lx L = 1 500 lx RL = 1 kΩ 500 Ω 100 Ω PC Ta ICE(L) VCE ICE(L) L ICEO Ta ICE(L) Ta Spectral sensitivity characteristics Directivity characteristics t r ICE(L) tf ICE(L)
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general elec- tronic equipment (such as office equipment, communications equipment, measuring instruments and house- hold appliances). Consult our sales staff in advance for information on the following applications:
- Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus- tion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
- Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica- tions satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat- ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.