XP4654 PANASONIC | Alldatasheet

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Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) For high speed switching n Features l Two elements incorporated into one package. l Reduction of the mounting area and assembly cost by one half. n Basic Part Number of Element l 2SC3757+2SA1738 n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Marking Symbol: ED Internal Connection Parameter Symbol Ratings Unit Collector to base voltage V CBO 40 V Collector to emitter voltage V CES 40 V Emitter to base voltage V EBO 5V Collector current I C 100 mA Peak collector current ICP 300 mA Collector to base voltage V CBO –15 V Collector to emitter voltage V CES –15 V Emitter to base voltage V EBO –4 V Collector current I C –50 mA Peak collector current ICP –100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Tr1 Overall Tr2 1 : Emitter (Tr1) 4 : Emitter (Tr2) 2 : Base (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) 2.1–0.1 0.2–0.05 0.650.65 2.0–0.10.9–0.1 0 to 0.1 0.2–0.1 0.7–0.1 0.2 0.12 +0.05 –0.02 Tr2 Tr1

Parameter Symbol Conditions min typ max Unit Collector cutoff current I CBO V CB = 40V , IE = 0 0.1 mA Emitter cutoff current I EBO V EB = 4V , IC = 0 0.1 mA Forward current transfer ratio hFE V CE = 1V , IC = 10mA 60 320 Collector to emitter saturation voltageV CE(sat) IC = 10mA, IB = 1mA 0.17 0.25 V Base to emitter saturation voltage VBE(sat) IC = 10mA, IB = 1mA 1.0 V Transition frequency f T V CB = 10V , IE = –10mA, f = 200MHz 450 MHz Collector output capacitance C ob V CB = 10V , IE = 0, f = 1MHz 2 6 pF Turn-on time t on 17 ns Turn-off time t off *1 17 ns Storage time t stg 10 ns n Electrical Characteristics (Ta=25˚C) l Tr1 l Tr2 Parameter Symbol Conditions min typ max Unit Collector cutoff current I CBO V CB = –8V , IE = 0 – 0.1 mA Emitter cutoff current I EBO V EB = –3V , IC = 0 – 0.1 mA Forward current transfer ratio hFE1 V CE = –1V , IC = –10mA 50 150 hFE2 V CE = –1V , IC = –1mA 30 Collector to emitter saturation voltageV CE(sat) IC = –10mA, IB = –1mA – 0.1 – 0.2 V Transition frequency f T V CB = –10V , IE = 10mA, f = 200MHz 800 1500 MHz Collector output capacitance C ob V CB = –5V , IE = 0, f = 1MHz 1 pF Turn-on time t on 12 ns Turn-off time t off *2 20 ns Storage time t stg 19 ns *1 Refer to the test circuit (page 459) *2 Refer to the test circuit (page 460) Common characteristics chart PT — Ta 100 150 200 250 02 0 4 0 8 060 140 120100 160 Ambient temperature Ta (˚C) Total power dissipation PT (mW ) XP4654

Characteristics charts of Tr1 ton, toff Test Circuit t stg Test Circuit IC — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB XP4654 220Ω 3.3kΩ 0.1µF 3.3kΩ 50Ω VCC =3V Vout 50Ω Vin=10V Vbb= –3V Vin Vin Vout ton toff Vout 10% 10% 90%90% 0.1µF 0.1µF A Vout Vin=10V Vbb=2V 90Ω VCC =10V 500Ω 50Ω 910Ω 500Ω 1kΩ Vin tstg Vout 10% 10% (Wave form at A) Switching time measuring circuit 120 100 Collector current IC (mA ) Collector to emitter voltage VCE (V) Ta=25˚C 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA IB=3.0mA 0.01 0.03 0.1 0.3 0.1 0.3 100 1 3 10 30 100 Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) IC /IB=10 Ta=75˚C 25˚C –25˚C 0.01 0.03 0.1 0.3 100 10 30 100 300 1000 Collector current IC (mA ) Base to emitter saturation voltage VBE(sat) (V) Ta=–25˚C 25˚C 75˚C IC /IB=10 0.1 0.3 600 500 400 300 200 100 1 3 10 30 100 Forward current transfer ratio hFE Collector current IC (mA ) VCE =1V Ta=75˚C 25˚C –25˚C Transition frequency fT (MHz ) Emitter current IE (mA ) 600 500 400 300 200 100 VCB =10V Ta=25˚C 3 10 30 100 Collector output capacitance Cob (pF) Collector to base voltage VCB (V) f=1MHz IE=0 Ta=25˚C

Composite Transistors XP4654 2kΩ 62Ω 51Ω VBB Vin Vin VCC =–1.5V Vin=–5.8V VBB =Ground Vin=9.8V VBB =–8.0V Vout 0.1µF 52Ω 10% 10%90%Vout 90% ton toff 508Ω 30Ω 51Ω VBB =–10V Vin VCC =–3V Vin=9.0V Vout 0.1µF 34Ω Vin Vout 90% toff 90% –60 –50 –40 –30 –20 –10 Collector current IC (mA ) Collector to emitter voltage VCE (V) Ta=25˚C –500µA –400µA –300µA –200µA –100µA IB=–600 µA –0.01 –0.1 –10 –100 –10 –100 –1000 Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) IC /IB=10 Ta=75˚C 25˚C –25˚C –0.01 –0.1 –10 –100 –30 –0.3 –0.03 10 100 100033 0 3 0 0 Collector current IC (mA ) Base to emitter saturation voltage VBE(sat) (V) IC /IB=10 Ta=–25˚C 25˚C 75˚C Characteristics charts of Tr2 ton, toff Test Circuit t stg Test Circuit IC — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB Switching time measuring circuit –0.1 240 200 160 120 –1 –10 –100 Forward current transfer ratio hFE Collector current IC (mA ) VCE =–10V Ta=75˚C 25˚C –25˚C 2400 2000 1600 1200 800 400 3 10 30 100 Transition frequency fT (MHz ) Emitter current IE (mA ) VCB =–10V f=200MHz Ta=25˚C 2.4 2.0 1.6 1.2 0.8 0.4 –3 –10 –30 –100 Collector output capacitance Cob (pF) Collector to base voltage VCB (V) f=1MHz IE=0 Ta=25˚C