XP1D873 PANASONIC | Alldatasheet
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Silicon N-channel junction FET For analog switching n Features l Two elements incorporated into one package. (Drain-coupled FETs) l Reduction of the mounting area and assembly cost by one half. l Low-frequency and low-noise J-FET. n Basic Part Number of Element l 2SK1103 · 2 elements n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Marking Symbol: OC Internal Connection Parameter Symbol Ratings Unit Gate to drain voltage V GDS –50 V Drain current I D 30 mA Gate current I G 10 mA Total power dissipation PT 150 mW Channel temperature Tch 150 ˚C Storage temperature Tstg –55 to +150 ˚C Rating of element Overall 1 : Source (FET1) 4 : Gate (FET2) 2 : Drain (FET1, 2) 5 : Gate (FET1) 3 : Source (FET2) EIAJ : SC–88A S–Mini Type Package (5–pin) 2.1–0.1 0.425 1.25–0.1 0.2–0.05 2.0–0.1 0.65 3 4 0.9– 0.1 0.7–0.1 0.2 0 to 0.1 0.12 +0.05 – 0.02 0.2–0.1 0.425 0.65 n Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Drain voltage V GDS IG = –10mA, VDS = 0 –50 V Drain current I DSS V DS = 10V , VGS = 0 0.2 6.0 mA Gate cutoff current I GSS V GS = –30V, VDS = 0 –10 nA Gate to source cutoff voltage VGSC V DS = 10V , ID = 10mA –1.5 –3.5 V Mutual conductance g m V DS = 10V , ID = 1mA, f = 1kHz 1.8 2.5 mS Drain ON resistance R DS(on) V DS = 10mV , VGS = 0 300 W Common source short-circuit input capacitanceC iss V DS = 10V , VGS = 0, f = 1MHz 7 pF Common source reverse transfer capacitanceC rss V DS = 10V , VGS = 0, f = 1MHz 1.5 pF Common source short-circuit output capacitanceC oss V DS = 10V , VGS = 0, f = 1MHz 1.5 pF FET 2 FET 1
PT — Ta I D — V DS ID — V GS | Yfs | — VGS | Yfs | — ID C iss, Crss, Coss — V DS XP1D873 100 150 200 250 02 0 4 0 8 060 140 120100 160 Ambient temperature Ta (˚C) Total power dissipation PT (mW ) 06 15 24 3 Drain to source voltage VDS (V) Drain current ID (mA ) 0.5 1.0 1.5 2.5 2.0 Ta=25˚C –0.4V –0.3V –0.2V –0.1V VGS =0V Gate to source voltage VGS (V) Drain current ID (mA ) 0.5 1.0 1.5 2.5 2.0 Ta=–25˚C 25˚C 75˚C Forward transfer admittance |Yfs| (mS ) Gate to source voltage VGS (V) VDS =10V Ta=25˚C IDSS =10mA Forward transfer admittance |Yfs| (mS ) 0.5 1.0 1.5 2.5 2.0 02468 Drain current ID (mA ) VDS =10V Ta=25˚C IDSS =10mA 10 100 Common source short-circuit input capacitance, Common source reverse transfer capacitance, Common source short-circuit output capacitance C iss, Crss, Coss (pF) Drain to source voltage VDS (V) VGS =0 f=1MHz Ta=25˚C C iss C rss C oss