XP1B301

XP1B301 PANASONIC | Alldatasheet

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Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification n Features l Two elements incorporated into one package. (Tr1 emitter is connected to Tr2 base.) l Reduction of the mounting area and assembly cost by one half. n Basic Part Number of Element l 2SB709A+2SD601A n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Marking Symbol: 4Q Internal Connection Parameter Symbol Ratings Unit Collector to base voltage V CBO –60 V Collector to emitter voltage V CEO –50 V Emitter to base voltage V EBO –7 V Collector current I C –100 mA Peak collector current ICP –200 mA Collector to base voltage V CBO 60 V Collector to emitter voltage V CEO 50 V Emitter to base voltage V EBO 7V Collector current I C 100 mA Peak collector current ICP 200 mA Total power dissipation PT 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Tr1 Overall Tr2 1 : Base (Tr1) 3 : Emitter (Tr2) 2 : Base (Tr2) 4 : Collector (Tr2) Emitter (Tr1) 5 : Collector (Tr1) EIAJ : SC–88A S–Mini Type Package (5–pin) 2.1–0.1 0.425 1.25–0.1 0.2–0.05 2.0–0.1 0.65 3 4 0.9– 0.1 0.7–0.1 0.2 0 to 0.1 0.12 +0.05 – 0.02 0.2–0.1 0.425 0.65 Tr2 Tr1

Composite Transistors XP1B301 n Electrical Characteristics (Ta=25˚C) l Tr1 Parameter Symbol Conditions min typ max Unit Collector to base voltage V CBO IC = –10mA, IE = 0 –60 V Collector to emitter voltage V CEO IC = –2mA, IB = 0 –50 V Emitter to base voltage V EBO IE = –10mA, IC = 0 –7 V Collector cutoff current ICBO V CB = –20V, IE = 0 – 0.1 mA ICEO V CE = –10V , IB = 0 –100 mA Forward current transfer ratio hFE V CE = –10V , IC = –2mA 160 460 Collector to emitter saturation voltageV CE(sat) IC = –100mA, IB = –10mA – 0.3 – 0.5 V Transition frequency f T V CB = –10V , IE = 1mA, f = 200MHz 80 MHz Collector output capacitance C ob V CB = –10V , IE = 0, f = 1MHz 2.7 pF l Tr2 Parameter Symbol Conditions min typ max Unit Collector to base voltage V CBO IC = 10mA, IE = 0 60 V Collector to emitter voltage V CEO IC = 2mA, IB = 0 50 V Emitter to base voltage V EBO IE = 10mA, IC = 0 7 V Collector cutoff current ICBO V CB = 20V , IE = 0 0.1 mA ICEO V CE = 10V , IB = 0 100 mA Forward current transfer ratio hFE V CE = 10V , IC = 2mA 160 460 Collector to emitter saturation voltageV CE(sat) IC = 100mA, IB = 10mA 0.1 0.3 V Transition frequency f T V CB = 10V , IE = –2mA, f = 200MHz 150 MHz Collector output capacitance C ob V CB = 10V , IE = 0, f = 1MHz 3.5 pF

Composite Transistors XP1B301 Common characteristics chart PT — Ta Characteristics charts of Tr1 IC — V CE IC — IB IB — V BE IC — V BE V CE(sat) — IC hFE — IC 100 150 200 250 02 0 4 0 8 060 140 120100 160 Ambient temperature Ta (˚C) Total power dissipation PT (mW ) –60 –50 –40 –30 –20 –10 Collector to emitter voltage VCE (V) Collector current IC (mA ) Ta=25˚C IB=–300 µA –250µA –200µA –150µA –100µA –50µA 0 –100 –200 –300 –400 –60 –50 –40 –30 –20 –10 Base current IB (µA) Collector current IC (mA ) VCE =–5V Ta=25˚C –400 –350 –300 –250 –200 –150 –100 –50 Base to emitter voltage VBE (V) Base current IB (µA) VCE =–5V Ta=25˚C –240 –200 –160 –120 –80 –40 Base to emitter voltage VBE (V) Collector current IC (mA ) VCE =–5V Ta=75˚C –25˚C 25˚C –0.001 –0.003 –1 –3 –0.01 –0.03 –0.1 –0.3 –10 Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) IC /IB=10 Ta=75˚C 25˚C –25˚C –1 –3 600 500 400 300 200 100 Forward current transfer ratio hFE Collector current IC (mA ) VCE =–10V Ta=75˚C 25˚C –25˚C

Composite Transistors XP1B301 fT — IE C ob — V CB NF — IE NF — IE h Parameter — IE h Parameter — VCE Characteristics charts of Tr2 IC — V CE IB — V BE IC — V BE 0.1 0.3 120 160 140 100 1 3 10 30 100 Transition frequency fT (MHz ) Emitter current IE (mA ) VCB =–10V Ta=25˚C –1 –5 –20–2 Collector output capacitance Cob (pF) Collector to base voltage VCB (V) f=1MHz IE=0 Ta=25˚C 0.01 0.03 0.1 0.3 1 3 10 Noise figure NF (dB) Emitter current IE (mA ) VCB =–5V f=1kHz R g=2kΩ Ta=25˚C 0.1 0.3 1 3 10 20.50.2 5 Noise figure NF (dB) Emitter current IE (mA ) VCB =–5V R g=50kΩ Ta=25˚C f=100Hz 10kHz 1kHz 0.1 100 200 300 0.3 1 3 10 20.50.2 5 Parameter h Emitter current IE (mA ) VCE =–5V f=270Hz Ta=25˚C hfe hoe (µS) hie (kΩ ) hre (·10–4) 1 0.1 100 200 300 0.3 1 3 10 20.50.2 5 Parameter h Collector to emitter voltage VCE (V) IE=2mA f=270Hz Ta=25˚C hfe hoe (µS) hie (kΩ ) hre (·10–4) 01 0 24 8 6 Collector to emitter voltage VCE (V) Collector current IC (mA ) Ta=25˚C IB=160µA 140µA 120µA 100µA 80µA 60µA 40µA 20µA 1200 1000 800 600 400 200 Base to emitter voltage VBE (V) Base current IB (µA) VCE =10V Ta=25˚C 240 200 160 120 Base to emitter voltage VBE (V) Collector current IC (mA ) VCE =10V Ta=75˚C –25˚C 25˚C

Composite Transistors XP1B301 IC — IB V CE(sat) — IC hFE — IC fT — IE NV — I C 0 1000 800600400200 240 200 160 120 Collector current IC (mA ) Base current IB (µA) VCE =10V Ta=25˚C 0.01 0.03 0.1 0.3 0.1 0.3 100 1 3 10 30 100 Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) IC /IB=10 Ta=75˚C 25˚C –25˚C 0.1 0.3 600 500 400 300 200 100 1 3 10 30 100 Forward current transfer ratio hFE Collector current IC (mA ) VCE =10V Ta=75˚C 25˚C –25˚C –0.1 –0.3 300 240 180 120 Transition frequency fT (MHz ) Emitter current IE (mA ) VCB =10V Ta=25˚C 240 200 160 120 30 100 300 100050 50020 200 Noise voltage NV (mV ) Collector current IC (µA) VCE =10V G V=80dB Function=FLAT Ta=25˚C 4.7kΩ R g=100kΩ 22kΩ