XP1554 PANASONIC | Alldatasheet
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Silicon NPN epitaxial planer transistor For high speed switching n Features l Two elements incorporated into one package. (Emitter-coupled transistors) l Reduction of the mounting area and assembly cost by one half. l Low V CE(sat). n Basic Part Number of Element l 2SC3757 · 2 elements n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Marking Symbol: EU Internal Connection Parameter Symbol Ratings Unit Collector to base voltage V CBO 40 V Collector to emitter voltage V CES 40 V Emitter to base voltage V EBO 5V Collector current I C 100 mA Peak collector current ICP 300 mA Total power dissipation PT 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Rating of element Overall n Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current I CBO V CB = 15V , IE = 0 0.1 mA Emitter cutoff current I EBO V EB = 4V , IC = 0 0.1 mA Forward current transfer ratio hFE V CE = 1V , IC = 10mA 60 200 Collector to emitter saturation voltageV CE(sat) IC = 10mA, IB = 1mA 0.17 0.25 V Base to emitter saturation voltage VBE(sat) IC = 10mA, IB = 1mA 1.0 V Transition frequency f T V CB = 10V , IE = –10mA, f = 200MHz 450 MHz Collector output capacitance C ob V CB = 10V , IE = 0, f = 1MHz 2 6 pF Turn-on time t on 17 ns Turn-off time t off 17 ns Storage time t stg 10 ns 1 : Base (Tr1) 4 : Collector (Tr2) 2 : Emitter 5 : Collector (Tr1) 3 : Base (Tr2) EIAJ : SC–88A S–Mini Type Package (5–pin) 2.1–0.1 0.425 1.25–0.1 0.2–0.05 2.0–0.1 0.65 3 4 0.9– 0.1 0.7–0.1 0.2 0 to 0.1 0.12 +0.05 – 0.02 0.2–0.1 0.425 0.65 Tr2 Tr1
ton, toff Test Circuit t stg Test Circuit PT — Ta IC — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB 220Ω 3.3kΩ 0.1µF 3.3kΩ 50Ω VCC =3V Vout 50Ω Vin=10V Vbb= –3V Vin Vin Vout ton toff Vout 10% 10% 90%90% 0.1µF 0.1µF A Vout Vin=10V Vbb=2V 90Ω VCC =10V 500Ω 50Ω 910Ω 500Ω 1kΩ Vin tstg Vout 10% 10% (Wave form at A) 120 160 200 180 140 100 02 0 4 0 8 060 140 120100 160 Ambient temperature Ta (˚C) Total power dissipation PT (mW ) 120 100 Collector current IC (mA ) Collector to emitter voltage VCE (V) Ta=25˚C 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA IB=3.0mA 0.01 0.03 0.1 0.3 0.1 0.3 100 1 3 10 30 100 Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) IC /IB=10 Ta=75˚C 25˚C –25˚C 0.01 0.03 0.1 0.3 100 10 30 100 300 1000 Collector current IC (mA ) Base to emitter saturation voltage VBE(sat) (V) Ta=–25˚C 25˚C 75˚C IC /IB=10 0.1 0.3 600 500 400 300 200 100 1 3 10 30 100 Forward current transfer ratio hFE Collector current IC (mA ) VCE =1V Ta=75˚C 25˚C –25˚C Transition frequency fT (MHz ) Emitter current IE (mA ) 600 500 400 300 200 100 VCB =10V Ta=25˚C 3 10 30 100 Collector output capacitance Cob (pF) Collector to base voltage VCB (V) f=1MHz IE=0 Ta=25˚C XP1554