XP1507 PANASONIC | Alldatasheet
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Silicon NPN epitaxial planer transistor High breakdown voltage and for low noise amplification n Features l Two elements incorporated into one package. (Emitter-coupled transistors) l Reduction of the mounting area and assembly cost by one half. n Basic Part Number of Element l 2SD814 · 2 elements n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Marking Symbol: 4O Internal Connection 1 : Base (Tr1) 4 : Collector (Tr2) 2 : Emitter 5 : Collector (Tr1) 3 : Base (Tr2) EIAJ : SC–88A S–Mini Type Package (5–pin) 2.1–0.1 0.425 1.25–0.1 0.2–0.05 2.0–0.1 0.65 3 4 0.9– 0.1 0.7–0.1 0.2 0 to 0.1 0.12 +0.05 – 0.02 0.2–0.1 0.425 0.65 Parameter Symbol Ratings Unit Collector to base voltage V CBO 150 V Collector to emitter voltage V CEO 150 V Emitter to base voltage V EBO 5V Collector current I C 50 mA Peak collector current ICP 100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Rating of element Overall n Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to emitter voltage V CEO IC = 100mA, IB = 0 150 V Emitter to base voltage V EBO IE = 10mA, IC = 0 5 V Collector cutoff current I CBO V CB = 100V, IE = 0 1 mA Forward current transfer ratio hFE V CE = 5V , IC = 10mA 90 450 Forward current transfer hFE ratio hFE (small/large)*1 V CE = 5V , IC = 10mA 0.5 0.99 Collector to emitter saturation voltageV CE(sat) IC = 30mA, IB = 3mA 1 V Transition frequency f T V CB = 10V , IE = –10mA, f = 200MHz 150 MHz Collector output capacitance C ob V CB = 10V , IE = 0, f = 1MHz 2.3 pF *1 Ratio between 2 elements Tr2 Tr1
Composite Transistors XP1507 100 150 200 250 02 0 4 0 8 060 140 120100 160 Ambient temperature Ta (˚C) Total power dissipation PT (mW ) 01 2 21 0 48 6 120 100 Collector to emitter voltage VCE (V) Collector current IC (mA ) Ta=25˚C IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA 120 100 Base to emitter voltage VBE (V) Collector current IC (mA ) VCE =10V Ta=75˚C –25˚C 25˚C 0.01 0.03 0.1 0.3 0.1 0.3 100 1 3 10 30 100 Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) IC /IB=10 Ta=75˚C25˚C –25˚C 0.1 0.3 600 500 400 300 200 100 1 3 10 30 100 Forward current transfer ratio hFE Collector current IC (mA ) VCE =10V Ta=75˚C 25˚C –25˚C Transition frequency fT (MHz ) Emitter current IE (mA ) 120 200 160 VCB =10V Ta=25˚C 1 3 10 30 10022 0 55 0 Collector output capacitance Cob (pF) Collector to base voltage VCB (V) f=1MHz IE=0 Ta=25˚C PT — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB