XP1043-QH

XP1043-QH MIMIX | Alldatasheet

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Technical content

Features

Supply Voltage (Vd1,2,3) Supply Current (Id1,2,3) Gate Bias Voltage (Vg1,2,3) Max Power Dissipation (Pdiss) RF Input Power Operating Temperature (Ta) Storage Temperature (Tstg) Channel Temperature (Tch) +10.0V 1500 mA -3V 8.0W +19 dBm -55 to +85 ºC -65 to +150 ºC -40 to MTTF Graph Page 1 of 5 (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Channel temperature directly affects a device’s MTTF. Channel temperature should be kept as low as possible to maximize lifetime. Electrical Characteristics (Ambient T emperature T = 25 oC) Parameter Frequency Range (f ) Small Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Reverse Isolation (S12) P1dB Psat OIP3 Drain Bias Voltage (Vd1,2,3) Detector Bias Voltage (Vdet,ref ) Gate Bias Voltage (Vg1,2,3) Supply Current (Id1) Supply Current (Id2) Supply Current (Id3) Units GHz dB dB dB dB dBm dBm dBm VDC VDC VDC mA mA mA Min. 12.0 Typ. 20.0 15.0 10.0 55.0 30.0 32.0 41.0 7.0 5.0 -1.0 100 200 400 Max. 16.0 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. P1043-QH The XP1043-QH is a packaged linear power amplifier that operates over the 12.0-16.0 GHz frequency band. The device provides 20 dB gain and 41 dBm Output Third Order Intercept Point (OIP3) across the band and is offered in an industry standard, fully molded 4x4mm QFN package. The packaged amplifier is comprised of a three stage power amplifier with an integrated, temperature compensated on-chip power detector. The device includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the packaged part. The device is manufactured in 0.5um GaAs PHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance. XP1043-QH is well suited for Point-to-Point Radio, LMDS, SATCOM and VSAT applications. General Description February 2008 - Rev 06-Feb-08

Power Amplifier Measurements Page 2 of 5 12.0-16.0 GHz Power Amplifier QFN, 4x4mm Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. P1043-QH February 2008 - Rev 06-Feb-08 XP1043-QH: S-Parameters at Room Temp. Vd=7 V, Id1=60 mA, Id2=120 mA, Id3=240 mA -24 -20 -16 -12 Frequency (GHz) S-Parameters (dB) S21 S22 S11 XP1043-QH: Pout (dBm) vs Pin (dBm) at Room Temp. Vd = 7 V, Iq = 700mA -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 Input Power (dBm) Output Power (dBm) Pout, Freq = 12.5 GHz Pout, Freq = 13.0 GHz Pout, Freq = 13.5 GHz Pout, Freq = 14.0 GHz Pout, Freq = 14.5 GHz Pout, Freq = 15.0 GHz Pout, Freq = 15.5 GHz XP1043-QH: Pout (dBm) vs Pin (dBm) at +85 °C. Vd = 7 V, Iq = 700mA -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 Input Power (dBm) Output Power (dBm) Pout, Freq = 12.5 GHz Pout, Freq = 13.0 GHz Pout, Freq = 13.5 GHz Pout, Freq = 14.0 GHz Pout, Freq = 14.5 GHz Pout, Freq = 15.0 GHz Pout, Freq = 15.5 GHz XP1043-QH: V_Detect vs Output Power, 12-16 GHz T=25°C (green) and +80°C (red) 100 1000 10000 -5 0 5 10 15 20 25 30 35 Output Power (dBm) Detector Voltage = Vref - Vdet (mV) XP1043-QH: C/I3 (dBc) vs Pout per Tone (dBm) at Room Temp. Vd=7 V, Id=700 mA. 12.5 to 15.5 GHz 14 15 16 17 18 19 20 21 22 Output Power (dBm per tone) CI/3 (dBc) CI3, Freq = 12.5 GHz, Temp = 35 C CI3, Freq = 13.5 GHz, Temp = 35 C CI3, Freq = 14.5 GHz, Temp = 35 C CI3, Freq = 15.5 GHz, Temp = 35 C XP1043-QH: C/I3 (dBc) vs Pout per Tone (dBm) at at +85 °C. Vd=7 V, Id=700 mA. 12.5 to 15.5 GHz 14 15 16 17 18 19 20 21 22 Output Power (dBm per tone) CI/3 (dBc) CI3, Freq = 12.5 GHz, Temp = 85 C CI3, Freq = 13.5 GHz, Temp = 85 C CI3, Freq = 14.5 GHz, Temp = 85 C CI3, Freq = 15.5 GHz, Temp = 85 c

Package Dimensions / Layout Functional Schematic Pin Designations Pin Number 1-3 5-6 13-14 16-18 22-24 Pin Name GND RF In GND VG1 VG2 VG3 GND Vdet Vref GND RF Out GND VD3 VD2 VD1 GND Pin Function Ground RF Input Ground Gate 1 Bias Gate 2 Bias Gate 3 Bias Ground Pwr Det Pwr Det Reference Ground RF Output Ground Drain 3 Bias Drain 2 Bias Drain 1 Bias Ground Nominal Value ~ -1.0V ~ -1.0V ~ -1.0V 5.0V 5.0V 7.0V, 400 mA 7.0V, 200 mA 7.0V, 100 mA 12.0-16.0 GHz Power Amplifier QFN, 4x4mm Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. P1043-QH February 2008 - Rev 06-Feb-08 GND RF IN VD3VD2VD1GND GND GND GND GND GND RF OUT GND GND GND GND GNDGND GNDVG1 VG2 VG3 Vdet Vref

App Note [1] Biasing - As shown in the Pin Designations table, the device is operated by biasing VD1,2,3 at 7.0V with 100, 200, 400mA respectively. It is recommended to use active bias to keep the currents constant in order to maintain the best performance over temperature. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -1.0V. Make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Board Layout - As shown in the board layout, it is recommended to provide 100pF decoupling caps as close to the bias pins as possible, with additional 10µF decoupling caps. Recommended Decoupling Capacitors: 100pF 0402, 10µF 0805 12.0-16.0 GHz Power Amplifier QFN, 4x4mm Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. P1043-QH February 2008 - Rev 06-Feb-08

Handling and Assembly Information

Ordering Information

CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:  Do not ingest.  Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.  Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Electrostatic Sensitive Device - Observe all necessary precautions when handling. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Package Attachment - This packaged product from Mimix Broadband is provided as a rugged surface mount package compatible with high volume solder installation. Vacuum tools or other suitable pick and place equipment may be used to pick and place this part. Care should be taken to ensure that there are no voids or gaps in the solder connection so that good RF, DC and ground connections are maintained. Voids or gaps can eventually lead not only to RF performance degradation, but reduced reliability and life of the product due to thermal stress. Mimix Lead-Free RoHS Compliant Program - Mimix has an active program in place to meet customer and governmental requirements for eliminating lead (Pb) and other environmentally hazardous materials from our products. All Mimix RoHS compliant components are form, fit and functional replacements for their non-RoHS equivalents. Lead plating of our RoHS compliant parts is 100% matte tin (Sn) over copper alloy and is backwards compatible with current standard SnPb low-temperature reflow processes as well as higher temperature (260°C reflow) “Pb Free” processes. Part Number for Ordering Description XP1043-QH-0G00 Matte Tin plated RoHS compliant 4x4 24L QFN surface mount package in bulk quantity XP1043-QH-0G0T Matte Tin plated RoHS compliant 4x4 24L QFN surface mount package in tape and reel XP1043-QH-EV1 XP1043-QH evaluation board Typical Reflow Profiles Reflow Profile Ramp Up Rate Activation Time and Temperature Time Above Melting Point Max Peak Temperature Time Within 5 ºC of Peak Ramp Down Rate SnPb 3-4 ºC/sec 60-120 sec @ 140-160 ºC 60-150 sec 240 ºC 10-20 sec 4-6 ºC/sec Pb Free 3-4 ºC/sec 60-180 sec @ 170-200 ºC 60-150 sec 265 ºC 10-20 sec 4-6 ºC/sec 12.0-16.0 GHz Power Amplifier QFN, 4x4mm Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. P1043-QH February 2008 - Rev 06-Feb-08 Caution: ESD Sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Proper ESD procedures should be followed when handling this device.