XP1035-QH-0G00

XP1035-QH MIMIX | Alldatasheet

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Technical content

Features

Supply Voltage (Vd1,2,3) Supply Current (Id1,2,3) Gate Bias Voltage (Vg1,2,3) Max Power Dissipation (Pdiss) RF Input Power Operating Temperature (Ta) Storage Temperature (Tstg) Channel Temperature (Tch) +7.2V 600 mA -3V 4.2W +15 dBm -55 to +85 ºC -65 to +150 ºC -40 to MTTF Graph (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Channel temperature directly affects a device’s MTTF. Channel temperature should be kept as low as possible to maximize lifetime. Electrical Characteristics (Ambient T emperature T = 25 oC) Parameter Frequency Range (f ) Small Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Reverse Isolation (S12) Psat OIP3 Drain Bias Voltage (Vd1,2,3) Detector Bias Voltage (Vdet,ref ) Gate Bias Voltage (Vg1,2,3) Supply Current (Id1) Supply Current (Id2) Supply Current (Id3) Units GHz dB dB dB dB dBm dBm VDC VDC VDC mA mA mA Min. 5.9 Typ. TBD 140 280 Max. 9.5 The XP1035-QH is a packaged linear power amplifier that operates over the 5.9-9.5 GHz frequency band. The device provides 26 dB gain and 39 dBm Output Third Order Intercept Point (OIP3) across the band and is offered in an industry standard, fully molded 4x4mm QFN package. The packaged amplifier is comprised of a three stage power amplifier with an integrated, temperature compensated on-chip power detector. The device includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the packaged part. The device is manufactured in 0.5um GaAs PHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance. The XP1035-QH is well suited for Point-to-Point Radio, LMDS, SATCOM and VSAT applications. General Description

Power Amplifier Measurements Page 2 of 6 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. P1035-QH 5.9-9.5 GHz Linear Power Amplifier QFN, 4x4mm XP1035-QH: S11 (dB) at Vd=6V, Id=500mA -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 RF Frequency (GHz) S11 (dB) +25 C -40 C +75 C XP1035-QH: S21 (dB) at Vd=6V, Id=500mA 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 RF Frequency (GHz) S21 (dB) +25 C -40 C +75 C XP1035-QH: S22 (dB) at Vd=6V, Id=500mA -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 RF Frequency (GHz) S22 (dB) +25 C -40 C +75 C XP1035-QH: S12 (dB) at Vd=6V, Id=500mA -60.0 -50.0 -40.0 -30.0 -20.0 -10.0 0.0 RF Frequency (GHz) S12 (dB) +25 C -40 C +75 C XP1035-QH: OIP3 (dBm) at Vd=6V, Id=500mA 20.0 25.0 30.0 35.0 40.0 45.0 RF Frequency (GHz) OIP3 (dBm) +25 C -40 C +75 C XP1035-QH: Psat (dBm) at Id=500mA, Vd=6V 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 RF Frequency (GHz) Psat (dBm) +25 C -40 C +80 C December 2007 - Rev 12-Dec-07

Power Amplifier Measurements (cont.) Page 3 of 6 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. P1035-QH 5.9-9.5 GHz Linear Power Amplifier QFN, 4x4mm XP1035-QH: Pout (dBm) and Gain (dB) vs Pin (dBm) Id=500mA, Vd=6V, +25 C 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 -10 -8 -6 -4 -2 0 2 4 6 8 10 Pin (dBm) Pout (dBm) and Gain (dB) 5.9 GHz

7 GHz

8.5 GHz

XP1035-QH: C/I3 vs Pout at Id=500mA, Vd=6V, +25 C, 10 MHz Span 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 10 12 14 16 18 20 22 Pout (dBm) C/I3 (dBm)

5.9 GHz

XP1035-QH: P1dB (dBm) at Id=500mA, Vd=6V 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 RF Frequency (GHz) P1dB (dBm) +25 C -40 C +80 C XP1035-QH: Detector (mV) vs Pout (dBm) at Id=500mA, Vd=6V, +25 C 100 1000 10000 5 7.5 10 12.5 15 17.5 20 22.5 25 Pout (dBm) Detector (mV) XP1035-QH: Detector (mV) vs Pout (dBm) at Id=500mA, Vd=6V, -40 C 100 1000 10000 5 7.5 10 12.5 15 17.5 20 22.5 25 Pout (dBm) Detector (mV) XP1035-QH: Detector (mV) vs Pout (dBm) at Id=500mA, Vd=6V, +80 C 100 1000 10000 5 7 . 5 1 01 2 . 51 51 7 . 52 02 2 . 52 5 Pout (dBm) Detector (mV) December 2007 - Rev 12-Dec-07

Package Dimensions / Layout Functional Schematic Pin Designations Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Pin Number 1-3 5-6 13-14 16-18 22-24 Pin Name GND RF In GND VG1 VG2 VG3 GND Vref Vdet GND RF Out GND VD3 VD2 VD1 GND Pin Function Ground RF Input Ground Gate 1 Bias Gate 2 Bias Gate 3 Bias Ground Pwr Det Reference Pwr Det Ground RF Output Ground Drain 3 Bias Drain 2 Bias Drain 1 Bias Ground Nominal Value ~ -1.0V ~ -1.0V ~ -1.0V 5.0V 5.0V 6.0V, 280 mA 6.0V, 140 mA 6.0V, 70 mA P1035-QH 5.9-9.5 GHz Linear Power Amplifier QFN, 4x4mm December 2007 - Rev 12-Dec-07 GND RF IN VD3VD2VD1GND GND GND GND GND GND RF OUT GND GND GND GND GNDGND GNDVG1 VG2 VG3 Vref Vdet

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. App Note [1] Biasing - As shown in the Pin Designations table, the device is operated by biasing VD1,2,3 at 5.0V with 70, 140, 280mA respectively. It is recommended to use active bias to keep the currents constant in order to maintain the best performance over temperature. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -1.0V. Make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Board Layout - As shown in the board layout, it is recommended to provide 100pF decoupling caps as close to the bias pins as possible, with additional 10µF decoupling caps. Recommended Decoupling Capacitors: 100pF 0402, 10µF 0805 P1035-QH 5.9-9.5 GHz Linear Power Amplifier QFN, 4x4mm December 2007 - Rev 12-Dec-07

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. P1035-QH 5.9-9.5 GHz Linear Power Amplifier QFN, 4x4mm December 2007 - Rev 12-Dec-07