XP1018

XP1018 MIMIX | Alldatasheet

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Electrical Characteristics (Ambient T emperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness (ΔS21) Reverse Isolation (S12) Output Power for 1dB Compression (P1dB) Drain Bias Voltage (Vd1,2,3,4) Gate Bias Voltage (Vg1,2,3,4) Supply Current (Id1) (Vd=5.0V, Vg=-0.7V Typical) Supply Current (Id2) (Vd=5.0V, Vg=-0.7V Typical) Supply Current (Id3) (Vd=5.0V, Vg=-0.7V Typical) Supply Current (Id4) (Vd=5.0V, Vg=-0.7V Typical) Units GHz dB dB dB dB dB dBm VDC VDC mA mA mA mA Min. 35.0 -1.0 Typ. 10.0 8.0 23.0 +/-1.0 45.0 +25.0 +5.0 -0.7 125 245 Max. 45.0 +5.5 0.0 150 295 Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,2,3,4) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 45,80,165,325 mA +0.3 VDC TBD -65 to +165 OC -55 to MTTF Table MTTF Table Chip Device Layout Page 1 of 6 (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. (2) Measured using constant current. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. October 2005 - Rev 21-Oct-05 P1018

35.0-45.0 GHz GaAs MMIC Power Amplifier Power Amplifier Measurements Page 2 of 6 35 36 37 38 39 40 41 42 43 44 45 Fr equency ( G Hz) Spar ams at V d=5V , V g=-0.7V -20 -18 -16 -14 -12-10 1214 2426 October 2005 - Rev 21-Oct-05 P1018 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Fr eq u en c y (GH z) S P ar ameter s -16 -14 -12 -10 S -parameters ( dB)

45 G Hz

23.44 dB

37 G Hz

1. 03 d B

40 G Hz

1. 16 d B DB(|S(1,1) |) Al l So u r c e s DB(|S(1,2) |) Al l So u r c e s DB(|S(2,2) |) Al l So u r c e s DB(|S(2,1) |) Al l So u r c e s 0 2 4 6 8 1 01 21 41 61 82 02 22 42 62 83 03 23 43 63 84 04 24 44 64 85 0 F requency ( G Hz) S12 at Vd =5V , V g =-0.7V -90 -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 35 36 37 38 39 40 41 42 43 44 45 F re que nc y (G Hz ) O utput P ower (d Bm ) and G ai n (d B) P- 1dB Linear G ain OIP3 Meas urements a t Vd =4.5V , Id=500 mA 3 s amples 37 37. 5 38 38.5 39 39. 5 40 Fr e que nc y OI P 3 (dB m) O IP 3 a t 4 . 5V , 50 0 mA C /I vs P out @ 4 . 5 V / 500 m A (37 -40 G Hz ) 5 6 7 8 9 1 01 11 21 31 41 51 61 71 81 92 02 12 22 32 42 5 Oupu t P ow e r pe r To ne (dB m) C/ I (d B) C /I vs P in @ 4. 5 V / 500 m A Projected IP 3

35.0-45.0 GHz GaAs MMIC Power Amplifier Page 3 of 6 Mechanical Drawing Bias Arrangement Bypass Capacitors - See App Note [2] (Note: Engineering designator is 38MPA0630) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Bond Pad #1 (RF In) Bond Pad #2 (Vd1) Bond Pad #3 (Vd2) Bond Pad #4 (Vd3) Bond Pad #5 (Vd4) Bond Pad #6 (RF Out) Bond Pad #7 (Vg4) Bond Pad #8 (Vg3) Bond Pad #9 (Vg2) Bond Pad #10 (Vg1) October 2005 - Rev 21-Oct-05 P1018 1.700 (0.067) 2 3 4 5 78910 0.592 (0.023) 0.992 (0.039) 1.392 (0.055) 2.193 (0.086) 1.993 (0.078) 1.392 (0.055) 0.992 (0.039) 0.592 (0.023)0.0 0.0 1.099 (0.043) 0.639 (0.025) 2.500 (0.098) 2 3 4 5 78910 RF In Vg1 RF Out Vg2 Vd1 Vd2 Vd3 Vd4 Vg3 Vg4 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws.

35.0-45.0 GHz GaAs MMIC Power Amplifier Page 4 of 6 App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1 through Vd4 at Vd(1,2,3,4)=5.0V with Id1=35mA, Id2=60mA, Id3=125mA and Id4=245mA. Separate biasing is recommended if the amplifier is to be used at high levels of saturation, where gate rectification will alter the effective gate control voltage. For non-critical applications it is possible to parallel all stages and adjust the common gate voltage for a total drain current Id(total)=465 mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.7V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement - For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd1,2,3,4 and Vg1,2,3,4) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. App Note [3] Output Power Adjust Using Gate Control - This device has a very useful additional feature. The output power can be adjusted by lowering the individual or combined gate voltages towards pinch off without sacrificing much in the way of Input/Output 3rd Order Intercept Point. Improvements to the IIP3/OIP3 data shown here while attenuating the gain are also possible with individual gate control. Data here has been taken using combined gate control (all gates changed together) to lower the device's output power. The results are shown below. Additionally, the accompanying graphs show the level and linearity of the typical attenuation achievable as the gate is adjusted at various levels until pinch-off. October 2005 - Rev 21-Oct-05 P1018 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. P in=+5 dB m, linear dec reas e f rom 5V/500 mA to 0V /0 mA (V gs=-1.6 V ) -30 -25 -20 -15 -10 37 37. 5 38 38 . 5 39 39. 5 40 Fr e que ncy (G Hz ) Ou tput P ower (dB m)

35.0-45.0 GHz GaAs MMIC Power Amplifier Page 5 of 6 T ypical Application Mimix Broadband's 35.0-45.0 GHz XU1004 GaAs MMIC Transmitter can be used in saturated radio applications and linear modulation schemes up to 128 QAM. The receiver can be used in upper and lower sideband applications from 35.0-45.0 GHz. MTTF T able (TBD) Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature deg Celsius deg Celsius deg Celsius FITs MTTF Hours Rth C/W C/W C/W Bias Conditions: Vd1=Vd2=Vd3=Vd4=5.0V, Id1=35 mA, Id2=60 mA, Id3=125 mA, Id4=245 mA These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. Mimix Broadband MMIC-based 35.0-45.0 GHz Transmitter Block Diagram (Changing LO and IF frequencies as required allows design to operate as high as 45 GHz) Mixer RF OUT 37.0-39.5 GHz XU1004XP1018 Coupler IF In

2 GHz

LO(+2.0dBm) 17.5-18.75 GHz (USB Operation) 19.5-20.75 GHz (LSB Operation) Buffer October 2005 - Rev 21-Oct-05 P1018 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws.

35.0-45.0 GHz GaAs MMIC Power Amplifier Page 6 of 6 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti- static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. October 2005 - Rev 21-Oct-05 P1018 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws.