XP1000

XP1000 MIMIX | Alldatasheet

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(1) Measured at +16 dBm per tone output carrier level at 22 GHz. (2) Measured using constant current. (3) Measured with either Vd5=I.0V or Vd5=5.5V and Rd=5.6KΩ. +6.0 VDC 700 mA +0.3 VDC +9.0 dBm -65 to +165 OC -55 to MTTF Table MTTF Table Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) (4) Channel temperature affects a device's MTTF . It is recommended to keep channel temperature as low as possible for maximum life. 1,2 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. May 2005 - Rev 05-May-05 P1000 P1000

17.0-24.0 GHz GaAs MMIC Power Amplifier Page 2 of 6 Power Amplifier Measurements XP1000 Vd1,2,3,4=5.5 V Id1,2,3,4=430 mA Frequency (GHz) Gain (dB) -60 -50 -40 -30 -20 -10 Reverse Isolation (dB) S21 Avg S12 Avg XP1000 Vd1,2,3,4=5.5 V Id1,2,3,4=430 mA -45 -40 -35 -30 -25 -20 -15 -10 Frequency (GHz) Input Return Loss (dB) -45 -40 -35 -30 -25 -20 -15 -10 Output Return Loss (dB) S11 Av g S22 Av g XP1000 Vd1,2,3,4=5.5 V Id1,2,3,4=430 mA 18 20 22 24 26 Frequency (GHz) Output Power P1dB (dBm) XP1000 Vd1,2,3,4=5.5 V Id1,2,3,4=430 mA 17 18 19 20 21 22 23 24 Frequency (GHz) OIP3 (dBm) 1.5 2.5 3.5 4.5 5.5 Min Av g Max Std Dev P1000 XP1000 Vd1,2,3,4=5.5 V Id1,2,3,4=430 mA Frequency=22.0 GHz 9 1 01 11 21 31 41 51 61 7 Output Power per tone (dBm) OIP3 (dBm) 0.25 0.5 0.75 1.25 Min Av g Max Std Dev Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. May 2005 - Rev 05-May-05

17.0-24.0 GHz GaAs MMIC Power Amplifier Page 3 of 6 Mechanical Drawing Bias Arrangement (Note: Engineering designator is 21PAMP_05B) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.003 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Bond Pad #1 (RF In) Bond Pad #2 (Vg1) Bond Pad #3 (Vd1) Bond Pad #4 (Vg2) Bond Pad #5 (Vd2) Bond Pad #6 (RF Out) Bond Pad #7 (V2 Out) Bond Pad #8 (Vd5) Bond Pad #9 (V1 Out) Bond Pad #10 (Vd4) Bond Pad #11 (Vg4) Bond Pad #12 (Vd3) Bond Pad #13 (Vg3) Bypass Capacitors - See App Note [3] Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. May 2005 - Rev 05-May-05 P1000 XP1000 Vg1,2 Vd1,2 RF Out V2 Out Vd5 V1 OutVd3,4Vg3,4 RF In P1000 1.791 (0.071) 2.500 (0.099) 0.467 (0.018) 0.866 (0.034) 1.267 (0.050) 1.867 (0.074) 2.184 (0.086) 3.560 (0.140) 3.167 (0.125) 3.368 (0.133) 2.967 (0.117) 0.467 (0.018) 0.866 (0.034) 1.267 (0.050) 1.867 (0.074)0.0 0.0 2 3 4 5 78910111213 P1000 Vg1,2 RF In Vg3,4 Vd3,4 V2 Out V1 Out RF Out Vd1,2 Vd5 Rd 2 3 4 5 78910111213

17.0-24.0 GHz GaAs MMIC Power Amplifier Page 4 of 6 Detector Curves App Note [1] Biasing - As shown in the bonding diagram, it is recommended to separately bias the upper and lower amplifiers at Vd(1+2)=5.5V Id(1+2)=215mA, and Vd(3+4)=5.5V Id(3+4)=215mA, although best performance will result in separately biasing Vd1 through Vd4, with Id1=Id3=71mA, Id2=Id4=144mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.5V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] On-board Detector - The output signal of the power amplifier is coupled via a 15dB directional coupler to a detector, which comprises a diode connected to the signal path, and a second diode used to provide a temperature compensation signal. The common bias terminal is Vd5, and is nominally set to forward bias both diodes. The bias is normally provided in 1 of 2 ways. The Vd5 port can be connected directly to a 1V bias, and given the internal series resistance, results in about 1mA of bias current. Alternatively, Vd5 can be tied to the same voltage as Vd1-Vd4 through an external series resistor Rd in the range 3 - 6kΩ. App Note [3] Bias Arrangement - For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. For Individual Stage Bias (Recommended for Saturated Applications) -- Each DC pad (Vd1,2,3,4 and Vg1,2,3,4)needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. Typical Detector Characteristic Total Output Power, dBm 2 tones each at 3dB below total output Detector Diff. Output, V 0.350 0.300 0.250 0.200 0.150 0.100 0.050 0.000 12 13 14 15 16 17 18 19 20 21 22 23 (LOG) Typical Detector Characteristic Total Output Power, dBm 2 tones each at 3dB below total output Detector Diff. Output, V 1.000 0.100 0.010 0.001 12 13 14 15 16 17 18 19 20 21 22 23 MTTF T able Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature 127 deg Celsius 147 deg Celsius 167 deg Celsius FITs 1.70E+00 9.71E+00 7.04E+01 MTTF Hours 9.11E+08 1.03E+08 1.42E+07 Rth 30.1 ° C/W Bias Conditions: Vd1=Vd2=Vd3=Vd4=5.5V, Id1=Id3=71 mA, Id2=Id4=144 mA These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. P1000 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. May 2005 - Rev 05-May-05

17.0-24.0 GHz GaAs MMIC Power Amplifier Page 5 of 6 RF In R=100.0 R=100.0 R=10.0 R=50.0 R=100.0 R=10.0 R=5.0 R=50.0 RF Out R=5.0 Vd2 Vg2 Vd1 Vg1 Vd4 Vg4 Vd3 Vg3 R=100.0 R=50.0 R=1K R=200.0 R=15.0 R=200.0 R=50.0 R=100.0 R=1K R=100.0 Vout1 Vd5 Vout2 R=600.0 R=600.0 R=600.0 R=600.0 T ypical Application Mimix Broadband MMIC-based 17.0-24.0 GHz Transmitter Block Diagram (Changing LO and IF frequencies as required allows design to operate as high as 24 GHz) IF IN

2 GHz

17.7-19.7 GHz On-Chip Temp Comp Detector LO(+12dBm) 15.7-17.7 GHz (USB Operation) 19.7-21.7 GHz (LSB Operation) Device Schematic P1000 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. May 2005 - Rev 05-May-05

17.0-24.0 GHz GaAs MMIC Power Amplifier Page 6 of 6 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti- static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. P1000 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. May 2005 - Rev 05-May-05