XP06401 PANASONIC | Alldatasheet
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1Publication date: February 2004 SJJ00212BED Composite Transistors XP06401 (XP6401) Silicon PNP epitaxial planar type For general amplification ■ Features
- Two elements incorporated into one package
- Reduction of the mounting area and assembly cost by one half ■ Basic Part Number
- 2SB0709A (2SB709A) × 2 ■ Absolute Maximum Ratings Ta = 25°C Unit: mm Internal Connection Marking Symbol: 5O Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO −60 V Collector-emitter voltage (Base open) V CEO −50 V Emitter-base voltage (Collector open) V EBO −7V Collector current I C −100 mA Peak collector current I CP −200 mA Total power dissipation P T 150 mW Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements 123 46 5 Tr2Tr1 Note) The part number in the parenthesis shows conventional part number. ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO IC = −10 µA, IE = 0 −60 V Collector-emitter voltage (Base open) V CEO IC = −2 mA, IB = 0 −50 V Emitter-base voltage (Collector open) V EBO IE = −10 µA, IC = 0 −7V Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 − 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0 −100 µA Forward current transfer ratio h FE VCE = −10 V, IC = −2 mA 160 460 hFE ratio * hFE(Small/ VCE = −10 V, IC = −2 mA 0.50 0.99 Large) Collector-emitter saturation voltage V CE(sat) IC = −100 mA, IB = −10 mA − 0.5 V Transition frequency f T VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz Collector output capacitance C ob VCB = −10 V, IE = 0, f = 1 MHz 2.7 pF (Common base, input open circuited) 10˚ 2.1±0.1 1.25±0.10 1 32 0.2±0.05 0.12+0.05 –0.02 0.2±0.1 (0.425) 1.3±0.1 2.0±0.1 0 to 0.1 0.9±0.1 0.9+0.2 –0.1 6 5 4 (0.65) (0.65) 1: Emitter (Tr1) 4: Collector (Tr2) 2: Emitter (Tr2) 5: Base (Tr1) 3: Base (Tr2) 6: Collector (Tr1) EIAJ: SC-88 SMini6-G1 Package
2 SJJ00212BED
PT Ta IC VCE IC IB IB VBE IC VBE VCE(sat) IC hFE IC fT IE Cob VCB 0 160 40 120 80 250 100 200 150 Total power dissipation PT (mW) Ambient temperature Ta (°C) 0 −4 −8 −12 −16 −60 −50 −40 −30 −20 −10 Collector current IC (mA) Collector-emitter voltage VCE (V) Ta = 25°C IB = − 300 µA −250 µA −200 µA −150 µA −100 µA −50 µA 0 −100 −200 −300 −400 −60 −50 −40 −30 −20 −10 Base current IB (µA) Collector current IC (mA) VCE = −5 V Ta = 25°C −400 −350 −300 −250 −200 −150 −100 −50 Base-emitter voltage VBE (V) Base current IB (µA) VCE = −5 V Ta = 25°C −240 −200 −160 −120 −80 −40 Base-emitter voltage VBE (V) Collector current IC (mA) VCE = −5 V Ta = 75°C −25°C 25°C Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) −10−3 −10−2 −10−1 −10 −10 −102 −103 IC / IB = 10 Ta = 75°C25°C −25°C 600 500 400 300 200 100 Forward current transfer ratio hFE Collector current IC (mA) −1 −10 −102 −103 VCE = –10 V Ta = 75°C 25°C −25°C 120 160 140 100 Transition frequency fT (MHz) Emitter current IE (mA) 10−1 11 0 1 0 2 VCB = −10 V Ta = 25°C Collector output capacitance (Common base, input open circuited) Cob (pF) Collector-base voltage VCB (V) −1 −10 −102 f = 1 MHz IE = 0 Ta = 25°C
NF IE NF IE h parameter IE h parameter VCE Noise figure NF (dB) Emitter current IE (mA) 10−2 10−1 11 0 VCB = −5 V f = 1 kHz Rg = 2 kΩ Ta = 25°C Noise figure NF (dB) Emitter current IE (mA) 10−1 11 0 VCB = −5 V Rg = 50 kΩ Ta = 25°C f = 100 Hz 10 kHz 1 kHz h parameter Emitter current IE (mA) 10−1 102 11 0 VCE = −5 V f = 270 Hz Ta = 25°C hfe hoe (µS) hie (kΩ) hre (× 10−4) h parameter Collector-emitter voltage VCE (V) 102 −10 −102 hfe hoe (µS) hie (kΩ) hre (× 10−4) IE = 2 mA f = 270 Hz Ta = 25°C
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