XP03312 PANASONIC | Alldatasheet

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Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) For switching/digital circuits n Features l Two elements incorporated into one package. (Transistors with built-in resistor, Tr1 collecter is connected to Tr2 base.) l Reduction of the mounting area and assembly cost by one half. n Basic Part Number of Element l UN1212+UN1112 n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Marking Symbol: 4P Internal Connection Parameter Symbol Ratings Unit Collector to base voltage V CBO 50 V Collector to emitter voltage V CEO 50 V Collector current I C 100 mA Collector to base voltage V CBO –50 V Collector to emitter voltage V CEO –50 V Collector current I C –100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Tr1 Overall Tr2 1 : Emitter(Tr1) 4 : Collector(Tr2) 2 : Base(Tr1) 5 : Collector(Tr1) 3 : Emitter(Tr2) Base(Tr2) EIAJ : SC–88A S–Mini Type Package (5–pin) 2.1–0.1 0.425 1.25–0.1 0.2–0.05 2.0–0.1 0.65 3 4 0.9– 0.1 0.7–0.1 0.2 0 to 0.1 0.12 +0.05 – 0.02 0.2–0.1 0.425 0.65 Tr2 Tr1

Composite Transistors XP03312 n Electrical Characteristics (Ta=25˚C) l Tr1 l Tr2 Parameter Symbol Conditions min typ max Unit Collector to base voltage V CBO IC = –10mA, IE = 0 –50 V Collector to emitter voltage V CEO IC = –2mA, IB = 0 –50 V Collector cutoff current ICBO V CB = –50V, IE = 0 – 0.1 mA ICEO V CE = –50V , IB = 0 – 0.5 mA Emitter cutoff current I EBO V EB = –6V , IC = 0 – 0.2 mA Forward current transfer ratio hFE V CE = –10V , IC = –5mA 60 Collector to emitter saturation voltageV CE(sat) IC = –10mA, IB = – 0.3mA – 0.25 V Output voltage high level V OH V CC = –5V , VB = – 0.5V, RL = 1kW –4.9 V Output voltage low level V OL V CC = –5V , VB = –2.5V, RL = 1kW – 0.2 V Input resistance R 1 –30% 22 +30% k W Resistance ratio R 1/R2 0.8 1.0 1.2 Transition frequency f T V CB = –10V , IE = 1mA, f = 200MHz 80 MHz Parameter Symbol Conditions min typ max Unit Collector to base voltage V CBO IC = 10mA, IE = 0 50 V Collector to emitter voltage V CEO IC = 2mA, IB = 0 50 V Collector cutoff current ICBO V CB = 50V , IE = 0 0.1 mA ICEO V CE = 50V , IB = 0 0.5 mA Emitter cutoff current I EBO V EB = 6V , IC = 0 0.2 mA Forward current transfer ratio hFE V CE = 10V , IC = 5mA 60 Collector to emitter saturation voltageV CE(sat) IC = 10mA, IB = 0.3mA 0.25 V Output voltage high level V OH V CC = 5V , VB = 0.5V , RL = 1kW 4.9 V Output voltage low level V OL V CC = 5V , VB = 2.5V , RL = 1kW 0.2 V Input resistance R 1 –30% 22 +30% k W Resistance ratio R 1/R2 0.8 1.0 1.2 Transition frequency f T V CB = 10V , IE = –1mA, f = 200MHz 150 MHz

Common characteristics chart PT — Ta Characteristics charts of Tr1 IC — V CE V CE(sat) — IC hFE — IC C ob — V CB IO — V IN V IN — IO XP03312 100 150 200 250 02 0 4 0 8 060 140 120100 160 Ambient temperature Ta (˚C) Total power dissipation PT (mW ) –40 –120 –80 –160 –140 –100 –60 –20 Collector to emitter voltage VCE (V) Collector current IC (mA ) Ta=25˚CIB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –0.1mA –0.01 –0.03 –0.1 –0.3 –0.1 –0.3 –10 –30 –100 Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) IC /IB=10 Ta=75˚C 25˚C –25˚C –1 –3 120 160 Forward current transfer ratio hFE Collector current IC (mA ) VCE =–10V Ta=75˚C 25˚C –25˚C –0.1 –0.3 Collector output capacitance Cob (pF) Collector to base voltage VCB (V) f=1MHz IE=0 Ta=25˚C –0.4 –10 –30 –100 –300 –1000 –3000 –10000 Output current IO (µA) Input voltage VIN (V) VO =–5V Ta=25˚C –0.01 –0.03 –0.1 –0.3 –0.1 –0.3 –10 –30 –100 Input voltage VIN (V) Output current IO (mA ) VO =–0.2V Ta=25˚C

Composite Transistors XP03312 Characteristics charts of Tr2 IC — V CE V CE(sat) — IC hFE — IC C ob — V CB IO — V IN V IN — IO –40 –120 –80 –160 –140 –100 –60 –20 Collector to emitter voltage VCE (V) Collector current IC (mA ) Ta=25˚CIB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –0.1mA –0.01 –0.03 –0.1 –0.3 –0.1 –0.3 –10 –30 –100 Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) IC /IB=10 Ta=75˚C25˚C –25˚C –1 –3 100 200 300 400 Forward current transfer ratio hFE Collector current IC (mA ) VCE =–10V Ta=75˚C 25˚C –25˚C –0.1 –0.3 Collector output capacitance Cob (pF) Collector to base voltage VCB (V) f=1MHz IE=0 Ta=25˚C –0.4 –10 –30 –100 –300 –1000 –3000 –10000 Output current IO (µA) Input voltage VIN (V) VO =–5V Ta=25˚C –0.01 –0.03 –0.1 –0.3 –0.1 –0.3 –10 –30 –100 Input voltage VIN (V) Output current IO (mA ) VO =–0.2V Ta=25˚C