XP01531 PANASONIC | Alldatasheet
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Silicon NPN epitaxial planer transistor For high frequency, oscillation and mixing n Features l Two elements incorporated into one package. (Emitter-coupled transistors) l Reduction of the mounting area and assembly cost by one half. n Basic Part Number of Element l 2SC3130 · 2 elements n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Marking Symbol: 9F Internal Connection Parameter Symbol Ratings Unit Collector to base voltage V CBO 15 V Collector to emitter voltage V CEO 10 V Emitter to base voltage V EBO 3V Collector current I C 50 mA Total power dissipation PT 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Rating of element Overall n Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to emitter voltage V CEO IC = 2mA, IB = 0 10 V Emitter to base voltage V EBO IE = 10mA, IC = 0 3 V Collector cutoff current ICBO V CB = 10V , IE = 0 1 mA ICEO V CE = 10V , IB = 0 10 mA Forward current transfer ratio hFE V CE = 4V , IC = 5mA 75 200 400 Collector to emitter saturation voltageV CE(sat) IC = 20mA, IB = 4mA 0.5 V Transition frequency f T V CB = 4V , IE = –5mA, f = 200MHz 1.4 1.9 2.5 GHz Collector output capacitance C ob V CB = 4V , IE = 0, f = 1MHz 0.9 1.1 pF Collector to base parameter r bb'·CC V CB = 4V , IE = –5mA, f = 31.9MHz 11.8 13.5 ps Common base reverse transfer capacitanceC rb V CB = 4V , IE = 0, f = 1MHz 0.25 0.35 pF 1 : Base (Tr1) 4 : Collector (Tr2) 2 : Emitter 5 : Collector (Tr1) 3 : Base (Tr2) EIAJ : SC–88A S–Mini Type Package (5–pin) 2.1–0.1 0.425 1.25–0.1 0.2–0.05 2.0–0.1 0.65 3 4 0.9– 0.1 0.7–0.1 0.2 0 to 0.1 0.12 +0.05 – 0.02 0.2–0.1 0.425 0.65 Tr2 Tr1
Composite Transistors XP01531 PT — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB 120 160 200 180 140 100 02 0 4 0 8 060 140 120100 160 Ambient temperature Ta (˚C) Total power dissipation PT (mW ) 01 2 21 0 48 6 Collector current IC (mA ) Collector to emitter voltage VCE (V) Ta=25˚C 400µA 300µA 200µA 100µA IB=500µA Base to emitter voltage VBE (V) Collector current IC (mA ) VCE =4V Ta=75˚C –25˚C 25˚C 0.01 0.03 0.1 0.3 0.1 0.3 100 1 3 10 30 100 Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) IC /IB=10 Ta=75˚C 25˚C –25˚C 0.1 0.3 360 300 240 180 120 1 3 10 30 100 Forward current transfer ratio hFE Collector current IC (mA ) VCE =4V Ta=75˚C 25˚C –25˚C –0.1 –0.3 1.0 2.0 3.0 4.0 3.5 2.5 1.5 0.5 Transition frequency fT (GHz ) Emitter current IE (mA ) VCB =4V Ta=25˚C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 3 10 30 100 Collector output capacitance Cob (pF) Collector to base voltage VCB (V) f=1MHz IE=0 Ta=25˚C