XP01212

XP1212 PANASONIC | Alldatasheet

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Silicon NPN epitaxial planer transistor For switching/digital circuits n Features l Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) l Reduction of the mounting area and assembly cost by one half. n Basic Part Number of Element l UN1212 · 2 elements n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Marking Symbol: 9K Internal Connection Parameter Symbol Ratings Unit Collector to base voltage V CBO 50 V Collector to emitter voltage V CEO 50 V Collector current I C 100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Rating of element Overall n Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage V CBO IC = 10mA, IE = 0 50 V Collector to emitter voltage V CEO IC = 2mA, IB = 0 50 V Collector cutoff current ICBO V CB = 50V , IE = 0 0.1 mA ICEO V CE = 50V , IB = 0 0.5 mA Emitter cutoff current I EBO V EB = 6V , IC = 0 0.2 mA Forward current transfer ratio hFE V CE = 10V , IC = 5mA 60 Forward current transfer hFE ratio hFE (small/large)*1 V CE = 10V , IC = 5mA 0.5 0.99 Collector to emitter saturation voltageV CE(sat) IC = 10mA, IB = 0.3mA 0.25 V Output voltage high level V OH V CC = 5V , VB = 0.5V , RL = 1kW 4.9 V Output voltage low level V OL V CC = 5V , VB = 2.5V , RL = 1kW 0.2 V Transition frequency f T V CB = 10V , IE = –2mA, f = 200MHz 150 MHz Input resistance R 1 –30% 22 +30% k W Resistance ratio R 1/R2 0.8 1.0 1.2 *1 Ratio between 2 elements 1 : Base (Tr1) 4 : Collector (Tr2) 2 : Emitter 5 : Collector (Tr1) 3 : Base (Tr2) EIAJ : SC–88A S–Mini Type Package (5–pin) 2.1–0.1 0.425 1.25–0.1 0.2–0.05 2.0–0.1 0.65 3 4 0.9– 0.1 0.7–0.1 0.2 0 to 0.1 0.12 +0.05 – 0.02 0.2–0.1 0.425 0.65 Tr2 Tr1

Composite Transistors XP1212 100 150 200 250 02 0 4 0 8 060 140 120100 160 Ambient temperature Ta (˚C) Total power dissipation PT (mW ) 01 2 21 0 48 6 120 160 140 100 Collector to emitter voltage VCE (V) Collector current IC (mA ) Ta=25˚C IB=1.0mA 0.1mA 0.2mA 0.3mA 0.4mA 0.5mA 0.6mA 0.7mA0.9mA 0.8mA 0.01 0.03 0.1 0.3 0.1 0.3 100 1 3 10 30 100 Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) IC /IB=10 Ta=75˚C25˚C –25˚C 100 200 300 400 10 30 100 300 1000 Forward current transfer ratio hFE Collector current IC (mA ) VCE =10V Ta=75˚C 25˚C –25˚C 0.1 0.3 1 3 10 30 100 Collector output capacitance Cob (pF) Collector to base voltage VCB (V) f=1MHz IE=0 Ta=25˚C 0.4 100 300 1000 3000 10000 Output current IO (µA) Input voltage VIN (V) VO =5V Ta=25˚C 0.01 0.03 0.1 0.3 0.1 0.3 100 1 3 10 30 100 Input voltage VIN (V) Output current IO (mA ) VO =0.2V Ta=25˚C PT — Ta IC — V CE V CE(sat) — IC hFE — IC C ob — V CB IO — V IN V IN — IO