XP01117

XP1117 PANASONIC | Alldatasheet

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Silicon PNP epitaxial planer transistor For switching/digital circuits n Features l Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) l Reduction of the mounting area and assembly cost by one half. n Basic Part Number of Element l UN1117 · 2 elements n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Marking Symbol: OL Internal Connection Parameter Symbol Ratings Unit Collector to base voltage V CBO –50 V Collector to emitter voltage V CEO –50 V Collector current I C –100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Rating of element Overall n Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage V CBO IC = –10mA, IE = 0 –50 V Collector to emitter voltage V CEO IC = –2mA, IB = 0 –50 V Collector cutoff current ICBO V CB = –50V, IE = 0 – 0.1 mA ICEO V CE = –50V , IB = 0 – 0.5 mA Emitter cutoff current I EBO V EB = –6V , IC = 0 – 0.01 mA Forward current transfer ratio hFE V CE = –10V , IC = –5mA 160 460 Forward current transfer hFE ratio hFE (small/large)*1 V CE = –10V , IC = –5mA 0.5 0.99 Collector to emitter saturation voltageV CE(sat) IC = –10mA, IB = – 0.3mA – 0.25 V Output voltage high level V OH V CC = –5V , VB = – 0.5V, RL = 1kW –4.9 V Output voltage low level V OL V CC = –5V , VB = –2.5V, RL = 1kW – 0.2 V Transition frequency f T V CB = –10V , IE = 1mA, f = 200MHz 80 MHz Input resistance R 1 –30% 22 +30% k W *1 Ratio between 2 elements 1 : Base (Tr1) 4 : Collector (Tr2) 2 : Emitter 5 : Collector (Tr1) 3 : Base (Tr2) EIAJ : SC–88A S–Mini Type Package (5–pin) 2.1–0.1 0.425 1.25–0.1 0.2–0.05 2.0–0.1 0.65 3 4 0.9– 0.1 0.7–0.1 0.2 0 to 0.1 0.12 +0.05 – 0.02 0.2–0.1 0.425 0.65 Tr2 Tr1

Composite Transistors XP1117 100 150 200 250 02 0 4 0 8 060 140 120100 160 Ambient temperature Ta (˚C) Total power dissipation PT (mW ) –120 –100 –80 –60 –40 –20 Collector to emitter voltage VCE (V) Collector current IC (mA ) Ta=25˚C IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –0.1mA –0.01 –0.03 –0.1 –0.3 –0.1 –0.3 –10 –30 –100 Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) IC /IB=10 Ta=75˚C 25˚C –25˚C –1 –3 100 200 300 400 Forward current transfer ratio hFE Collector current IC (mA ) VCE =–10V Ta=75˚C 25˚C –25˚C –0.1 –0.3 Collector output capacitance Cob (pF) Collector to base voltage VCB (V) f=1MHz IE=0 Ta=25˚C –0.4 –10 –30 –100 –300 –1000 –3000 –10000 Output current IO (µA) Input voltage VIN (V) VO =–5V Ta=25˚C –0.01 –0.03 –0.1 –0.3 –0.1 –0.3 –10 –30 –100 Input voltage VIN (V) Output current IO (mA ) VO =–0.2V Ta=25˚C PT — Ta IC — V CE V CE(sat) — IC hFE — IC C ob — V CB IO — V IN V IN — IO