XN09D57 PANASONIC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
1Publication date: March 2004 SJJ00245CED XN09D57 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) For DC-DC converter ■ Features
- Two elements incorporated into one package (Tr + SBD)
- Reduction of the mounting area and assembly cost by one half
- Low collector-emitter saturation voltage VCE(sat) ■ Basic Part Number
- XN9D57 + MA3XD11 ■ Absolute Maximum Ratings Ta = 25°C Marking Symbol: EW Internal Connection Unit: mm Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO IC = −10 µA, IE = 0 −15 V Collector-emitter voltage (Base open) V CEO IC = −1 mA, IB = 0 −15 V Emitter-base voltage (Collector open) V EBO IE = −10 µA, IC = 0 −5V Collector-base cutoff current (Emitter open) ICBO VCB = −10 V, IE = 0 − 0.1 µA Forward current transfer ratio * hFE1 VCE = −2 V, IC = −100 mA 200 560 hFE2 VCE = −2 V, IC = −2.5 A 100 Collector-emitter saturation voltage * VCE(sat) IC = −1 A, IB = −10 mA −140 mV IC = −2.5 A, IB = −50 mA −270 −320 ■ Electrical Characteristics Ta = 25°C ± 3°C
- Tr 1: Emitter 4: Collector (Cathode) 2: Base 5: Collector (Cathode) 3: Anode 6: Collector (Cathode) Mini6-G1 Package Note) *: Measuring on ceramic substrate at 15 mm × 15 mm × 0.6 mm 2.90 1.9±0.1 0.16+0.10 –0.06 2.8+0.2 –0.3 1.1+0.3 –0.1 1.10 to 0.1 +0.2 –0.1 1.50(0.65) 0.4±0.2 +0.25 –0.05 (0.95) 0.50+0.10 –0.05 0.30+0.10 –0.05 (0.95) 456 312 +0.20 –0.05 10° Display at No.1 lead Parameter Symbol Rating Unit Tr Collector-base voltage V CBO −15 V (Emitter open) Collector-emitter voltage V CEO −15 V (Base open) Emitter-base voltage V EBO −5V (Collector open) Collector current I C −2.5 A Peak collector current I CP −10 A SBD Reverse voltage V R 20 V Repetitive peak reverse voltage VRRM 25 V Forward current (Average) I F(AV) 1A Non-repetitive peak IFSM 2A forward surge current Overall Total power dissipation * PT 600 mW Junction temperature T j 125 °C Storage temperature T stg −55 to +125 °C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement
2 SJJ00245CED
Common characteristics chart PT Ta ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C
- Tr (continued) Parameter Symbol Conditions Min Typ Max Unit Collector output capacitance C ob VCB = −10 V, IE = 0, f = 1 MHz 40 pF (Common base, input open circuited) Transition frequency f T VCB = −10 V, IE = 50 mA, f = 200 MHz 180 MHz Turn-on time t on Refer to the switching time measurement circuit 35 ns Storage time t stg 110 ns Turn-off time t off 10 ns
- SBD Parameter Symbol Conditions Min Typ Max Unit Forward voltage V F IF = 1 A 0.45 V Reverse current I R VR = 20 V 200 µA Terminal capacitance C t VR = 0, f = 1 MHz 100 pF Switching time measurement circuit 470 µF VCC = −5 V RL Output Input RB IB2 IB1 −20IB1 = 20IB2 = IC = −1.5 A PW = 20 µs DC ≤ 1% 200 400 600 0 40 80 120 Total power dissipation PT (mW) Ambient temperature Ta (°C) Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for diodes. 2. Schottky barrier diode is frail with static electricity, and it should be kept in safety from shock of static electricity and static electricity level.
Characteristics charts of Tr Cob VCB IC VCE VCE(sat) IC hFE IC Characteristics charts of SBD IF VF IR Ta Ct VR − 0.04 − 0.08 − 0.12 − 0.16 − 0.20 0 −2 −4 −6 −8 Ta = 25°C Collector current IC (A) Collector-emitter voltage VCE (V) IB = −300 µA −250 µA −200 µA −150 µA −100 µA −50 µA IC / IB = 50 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (A) Ta = 75°C −25°C 25°C − 0.01 − 0.1 −10 100 200 300 400 500 600 VCE = −2 V Forward current transfer ratio hFE Collector current IC (A) Ta = 75°C −25°C 25°C 100 Collector-base voltage VCB (V) f = 1 MHz Ta = 25°C 0 −4 −8 −12 −16 Collector output capacitance (Common base, input open circuited) Cob (pF) 0.4 0.8 1.2 0 0.4 0.8 1.2 Forward current IF (A) Forward voltage VF (V) Ta = 85°C −25°C 25°C 0 2 04 06 08 0 Reverse current IR (mA) Ambient temperature Ta (°C) VR = 20 V 102 104 103 01 0 2 0 1 000 Reverse voltage VR (V) Terminal capacitance Ct (pF) f = 1 MHz Ta = 25°C 100
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general elec- tronic equipment (such as office equipment, communications equipment, measuring instruments and house- hold appliances). Consult our sales staff in advance for information on the following applications:
- Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus- tion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
- Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica- tions satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat- ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.