XN04501 PANASONIC | Alldatasheet
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1Publication date: August 2003 SJJ00075BED Composite Transistors XN04501 (XN4501) Silicon NPN epitaxial planar type For general amplification ■ Features
- Two elements incorporated into one package
- Reduction of the mounting area and assembly cost by one half ■ Basic Part Number
- 2SD0601A (2SD601A) × 2 ■ Absolute Maximum Ratings Ta = 25°C Unit: mm Internal Connection Marking Symbol: 5H Tr2 Tr1 3 2 1 Note) The part number in the parenthesis shows conventional part number. ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO 60 V Collector-emitter voltage (Base open) V CEO 50 V Emitter-base voltage (Collector open) V EBO 7V Collector current I C 100 mA Peak collector current I CP 200 mA Total power dissipation P T 300 mW Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO IC = 10 µA, IE = 06 0 V Collector-emitter voltage (Base open) V CEO IC = 2 mA, IB = 05 0 V Emitter-base voltage (Collector open) V EBO IE = 10 µA, IC = 07V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 µA Forward current transfer ratio h FE VCE = 10 V, IC = 2 mA 160 460 Collector-emitter saturation voltage V CE(sat) IC = 100 mA, IB = 10 mA 0.1 0.3 V Transition frequency f T VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz Collector output capacitance C ob VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF (Common base, input open circuited) 1: Collector (Tr1) 4: Collector (Tr2) 2: Base (Tr2) 5: Base (Tr1) 3: Emitter (Tr2) 6: Emitter (Tr1) EIAJ: SC-74 Mini6-G1 Package 2.90 1.9±0.1 0.16+0.10 –0.06 2.8+0.2 –0.3 1.1+0.3 –0.1 1.10 to 0.1 +0.2 –0.1 1.500.65±0.15 0.4±0.2 +0.25 –0.05 (0.95) 0.30+0.10 –0.05 0.50+0.10 –0.05 (0.95) 654 132 +0.20 –0.05 10˚
2 SJJ00075BED
IB VBE IC VBE VCE(sat) IC PT Ta IC VCE IC IB hFE IC fT IE NV IC 0 160 40 120 80 500 200 400 100 300 Total power dissipation PT (mW) Ambient temperature Ta (°C) 01 0 24 8 6 Collector current IC (mA) Collector-emitter voltage VCE (V) Ta = 25°C IB = 160 µA 140 µA 120 µA 100 µA 80 µA 60 µA 40 µA 20 µA 240 200 160 120 Base current IB (mA) Collector current IC (mA) VCE = 10 V Ta = 25°C 1.2 1.0 0.8 0.6 0.4 0.2 Base-emitter voltage VBE (V) Base current IB (mA) VCE = 10 V Ta = 25°C 240 200 160 120 Base-emitter voltage VBE (V) Collector current IC (mA) VCE = 10 V Ta = 75°C −25°C 25°C Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 10−2 10−1 10−1 102 11 0 1 0 2 IC / IB = 10 Ta = 75°C25°C −25°C 600 500 400 300 200 100 Forward current transfer ratio hFE Collector current IC (mA) 10−1 11 0 1 0 2 VCE = 10 V Ta = 75°C 25°C −25°C 300 240 180 120 Transition frequency fT (MHz) Emitter current IE (mA) VCB = 10 V Ta = 25°C 240 200 160 120 Noise voltage NV (mV) Collector current IC (µA) 10 10 2 103 VCE = 10 V GV = 80 dB Function = FLAT Ta = 25°C 4.7 kΩ Rg = 100 kΩ 22 kΩ
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