XN02501

XN2501 PANASONIC | Alldatasheet

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Silicon NPN epitaxial planer transistor For general amplification n Features l Two elements incorporated into one package. (Base-coupled transistors) l Reduction of the mounting area and assembly cost by one half. n Basic Part Number of Element l 2SD601A · 2 elements n Absolute Maximum Ratings (Ta=25˚C) 1 : Collector (Tr1) 4 : Base 2 : Collector (Tr2) 5 : Emitter (Tr1) 3 : Emitter (Tr2) EIAJ : SC–74A Mini Type Pakage (5–pin) Unit: mm Marking Symbol: 5W Internal Connection Parameter Symbol Ratings Unit Collector to base voltage V CBO 60 V Collector to emitter voltage V CEO 50 V Emitter to base voltage V EBO 7V Collector current I C 100 mA Peak collector current ICP 200 mA Total power dissipation PT 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Rating of element Overall 2.8 +0.2 -0.3 3 2 1.45–0.1 0.95 0.95 1.9–0.10.8 +0.25 -0.05 0.3 +0.1 -0.05 0.16 0 to 0.1 +0.1 -0.06 2.9 +0.2 -0.051.1 +0.2 -0.1 0.4–0.2 0.1 to 0.3 n Electrical Characteristics (Ta=25˚C) Tr2 Tr1 Parameter Symbol Conditions min typ max Unit Collector to base voltage V CBO IC = 10mA, IE = 0 60 V Collector to emitter voltage V CEO IC = 2mA, IB = 0 50 V Emitter to base voltage V EBO IE = 10mA, IC = 0 7 V Collector cutoff current ICBO V CB = 20V , IE = 0 0.1 mA ICEO V CE = 10V , IB = 0 100 mA Forward current transfer ratio hFE V CE = 10V , IC = 2mA 160 460 Forward current transfer hFE ratio hFE (small/large)*1 V CE = 10V , IC = 2mA 0.5 0.99 Collector to emitter saturation voltageV CE(sat) IC = 100mA, IB = 10mA 0.1 0.3 V Transition frequency f T V CB = 10V , IE = –1mA, f = 200MHz 150 MHz Collector output capacitance C ob V CB = 10V , IE = 0, f = 1MHz 3.5 pF *1 Ratio between 2 elements

Composite Transistors XN2501 100 200 300 400 500 0 40 80 120 160 Ambient temperature Ta (˚C) Total power dissipation PT (mW ) 01 0 24 8 6 Collector to emitter voltage VCE (V) Collector current IC (mA ) Ta=25˚C IB=160µA 140µA 120µA 100µA 80µA 60µA 40µA 20µA 1200 1000 800 600 400 200 Base to emitter voltage VBE (V) Base current IB (µA) VCE =10V Ta=25˚C 240 200 160 120 Base to emitter voltage VBE (V) Collector current IC (mA ) VCE =10V Ta=75˚C –25˚C 25˚C 0 1000 800600400200 240 200 160 120 Collector current IC (mA ) Base current IB (µA) VCE =10V Ta=25˚C 0.01 0.03 0.1 0.3 0.1 0.3 100 1 3 10 30 100 Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) IC /IB=10 Ta=75˚C25˚C –25˚C 0.1 0.3 600 500 400 300 200 100 1 3 10 30 100 Forward current transfer ratio hFE Collector current IC (mA ) VCE =10V Ta=75˚C 25˚C –25˚C –0.1 –0.3 300 240 180 120 Transition frequency fT (MHz ) Emitter current IE (mA ) VCB =10V Ta=25˚C 240 200 160 120 30 100 300 100050 50020 200 Noise voltage NV (mV ) Collector current IC (µA) VCE =10V G V=80dB Function=FLAT Ta=25˚C 4.7kΩ R g=100kΩ 22kΩ PT — Ta I C — V CE IB — V BE IC — V BE IC — IB V CE(sat) — IC hFE — IC fT — IE NV — I C