XN2401 PANASONIC | Alldatasheet

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Silicon PNP epitaxial planer transistor For general amplification n Features l Two elements incorporated into one package. (Base-coupled transistors) l Reduction of the mounting area and assembly cost by one half. n Basic Part Number of Element l 2SB709A · 2 elements n Absolute Maximum Ratings (Ta=25˚C) 1 : Collector (Tr1) 4 : Base 2 : Collector (Tr2) 5 : Emitter (Tr1) 3 : Emitter (Tr2) EIAJ : SC–74A Mini Type Pakage (5–pin) Unit: mm Marking Symbol: 7R Internal Connection Parameter Symbol Ratings Unit Collector to base voltage V CBO –60 V Collector to emitter voltage V CEO –50 V Emitter to base voltage V EBO –7 V Collector current I C –100 mA Peak collector current ICP –200 mA Total power dissipation PT 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Rating of element Overall 2.8 +0.2 -0.3 3 2 1.45–0.1 0.95 0.95 1.9–0.10.8 +0.25 -0.05 0.3 +0.1 -0.05 0.16 0 to 0.1 +0.1 -0.06 2.9 +0.2 -0.051.1 +0.2 -0.1 0.4–0.2 0.1 to 0.3 n Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage V CBO IC = –10mA, IE = 0 –60 V Collector to emitter voltage V CEO IC = –2mA, IB = 0 –50 V Emitter to base voltage V EBO IE = –10mA, IC = 0 –7 V Collector cutoff current ICBO V CB = –20V, IE = 0 – 0.1 mA ICEO V CE = –10V , IB = 0 –100 mA Forward current transfer ratio hFE V CE = –10V , IC = –2mA 160 460 Forward current transfer hFE ratio hFE (small/large)*1 V CE = –10V , IC = –2mA 0.5 0.99 Collector to emitter saturation voltageV CE(sat) IC = –100mA, IB = –10mA – 0.3 – 0.5 V Transition frequency f T V CB = –10V , IE = 1mA, f = 200MHz 80 MHz Collector output capacitance C ob V CB = –10V , IE = 0, f = 1MHz 2.7 pF *1 Ratio between 2 elements Tr2 Tr1

Composite Transistors XN2401 PT — Ta I C — V CE IC — IB IB — V BE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB 100 200 300 400 500 0 40 80 120 160 Ambient temperature Ta (˚C) Total power dissipation PT (mW ) –60 –50 –40 –30 –20 –10 Collector to emitter voltage VCE (V) Collector current IC (mA ) Ta=25˚C IB=–300 µA –250µA –200µA –150µA –100µA –50µA 0 –100 –200 –300 –400 –60 –50 –40 –30 –20 –10 Base current IB (µA) Collector current IC (mA ) VCE =–5V Ta=25˚C –400 –350 –300 –250 –200 –150 –100 –50 Base to emitter voltage VBE (V) Base current IB (µA) VCE =–5V Ta=25˚C –240 –200 –160 –120 –80 –40 Base to emitter voltage VBE (V) Collector current IC (mA ) VCE =–5V Ta=75˚C –25˚C 25˚C –0.001 –0.003 –1 –3 –0.01 –0.03 –0.1 –0.3 –10 Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) IC /IB=10 Ta=75˚C25˚C –25˚C –1 –3 600 500 400 300 200 100 Forward current transfer ratio hFE Collector current IC (mA ) VCE =–10V Ta=75˚C 25˚C –25˚C 0.1 0.3 120 160 140 100 1 3 10 30 100 Transition frequency fT (MHz ) Emitter current IE (mA ) VCB =–10V Ta=25˚C –1 –5 –20–2 Collector output capacitance Cob (pF) Collector to base voltage VCB (V) f=1MHz IE=0 Ta=25˚C

Composite Transistors XN2401 0.01 0.03 0.1 0.3 1 3 10 Noise figure NF (dB) Emitter current IE (mA ) VCB =–5V f=1kHz R g=2kΩ Ta=25˚C 0.1 0.3 1 3 10 20.50.2 5 Noise figure NF (dB) Emitter current IE (mA ) VCB =–5V R g=50kΩ Ta=25˚C f=100Hz 10kHz 1kHz 0.1 100 200 300 0.3 1 3 10 20.50.2 5 Parameter h Emitter current IE (mA ) VCE =–5V f=270Hz Ta=25˚C hfe hoe (µS) hie (kΩ ) hre (·10–4) 100 200 300 Parameter h Collector to emitter voltage VCE (V) IE=2mA f=270Hz Ta=25˚C hfe hoe (µS) hie (kΩ ) hre (·10–4) NF — IE NF — IE h Parameter — IE h Parameter — VCE