XN01112 PANASONIC | Alldatasheet
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Publication date: February 2004 SJJ00005BED Composite Transistors XN01112 (XN1112) Silicon PNP epitaxial planar type For switching/digital circuits ■Features
- Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)
- Reduction of the mounting area and assembly cost by one half ■Basic Part Number
- UNR2112 (UN2112) × 2 ■Absolute Maximum Ratings Ta = 25°C Unit: mm Internal Connection Marking Symbol: 7K Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −50 V Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 V Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 − 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 − 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0 − 0.2 mA Forward current transfer ratio hFE VCE = −10 V, IC = −5 mA hFE Ratio * hFE(Small VCE = −10 V, IC = −5 mA 0.50 0.99 /Large) Collector-emitter saturation voltage VCE(sat) IC = −10 mA, IB = − 0.3 mA − 0.25 V Output voltage high-level VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ −4.9 V Output voltage low-level VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ − 0.2 V Input resistance −30% +30% kΩ Resistance ratio R1 / R2 0.8 1.0 1.2 Transition frequency fT VCB = −10 V, IE = 1 mA, f = 200 MHz MHz ■Electrical Characteristics Ta = 25°C ± 3°C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements 1: Collector (Tr1) 4: Emitter 2: Collector (Tr2) 5: Base (Tr1) 3: Base (Tr2) EIAJ: SC-74A Mini5-G1 Package 2.90 1.9±0.1 0.16+0.10 –0.06 2.8+0.2 –0.3 1.1+0.3 –0.1 1.1 0 to 0.1 +0.2 –0.1 1.50 (0.65) 0.4±0.2 +0.25 –0.05 (0.95) (0.95) 0.30+0.10 –0.05 +0.20 –0.05 10˚ Tr1 Tr2 Note) The part number in the parenthesis shows conventional part number. Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Collector current IC −100 mA Total power dissipation PT 300 mW Junction temperature Tj 150 Storage temperature Tstg −55 to +150
hFE IC Cob VCB IO VIN PT Ta IC VCE VCE(sat) IC VIN IO 160 120 500 200 400 100 300 Total power dissipation PT (mW) Ambient temperature Ta (°C) −12 −10 −40 −120 −80 −160 Collector-emitter voltage VCE (V) Collector current IC (mA) Ta = 25°C IB = −1.0 mA − 0.9mA − 0.8mA − 0.7mA − 0.6mA − 0.5mA − 0.4mA − 0.3mA − 0.2mA − 0.1mA − 0.01 − 0.1 − 0.1 −10 −100 −10 −100 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) IC / IB = 10 Ta = 75°C 25°C −25°C 100 200 300 400 −10 −100 −1 000 Forward current transfer ratio hFE Collector current IC (mA) VCE = −10 V Ta = 75°C 25°C −25°C − 0.1 −10 −100 Collector output capacitance (Common base, input open circuited) Cob (pF) Collector-base voltage VCB (V) f = 1 MHz IE = 0 Ta = 25°C − 0.4 −10 −102 −103 −104 −1.4 −1.2 −1.0 − 0.8 − 0.6 Output current IO (µA) Input voltage VIN (V) VO = −5 V Ta = 25°C − 0.01 − 0.1 − 0.1 −10 −100 −10 −100 Input voltage VIN (V) Output current IO (mA) VO = − 0.2 V Ta = 25°C
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