XB1008-BD

XB1008-BD MIMIX | Alldatasheet

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10.0-21.0 GHz GaAs MMIC Buffer Amplifier Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure 100% On-Wafer RF , DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Features Chip Device Layout Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1 Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 180 mA +0.3 VDC +20.0 dBm -65 to +165 OC -55 to MTTF Graph1 MTTF Graph1 Page 1 of 9 (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient T emperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Noise Figure (NF) Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Drain Bias Voltage (Vd) Gate Bias Voltage (Vg2) Supply Current (Id) (Vd=4.5V, Vg2=-0.5V Typical) Units GHz dB dB dB dB dB dB dBm dBm VDC VDC mA Min. 10.0 -1.0 Typ. 15.0 17.0 18.0 +/-2.0 35.0 5.5 +20.0 +22.0 +4.5 -0.5 130 Max. 21.0 +5.5 0.0 155 (2) Measured using constant current. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. B1008-BD Mimix Broadband’s two stage 10.0-21.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +20.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Microwave and Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. General Description March 2007 - Rev 06-Mar-07

Buffer Amplifier Measurements Page 2 of 9 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD XB1008-BD Vd=4.0 V, Id=130 mA, Vg2=Open Frequency (GHz) Gain (dB) +95 Deg C -30 Deg C +25 Deg C XB1008-BD Vd=4.0 V, Id=130 mA, Vg2=Open -90 -80 -70 -60 -50 -40 -30 -20 -10 Frequency (GHz) Reverse Isolation (dB) +95 Deg C -30 Deg C +25 Deg C XB1008-BD Vd=4.0 V, Id=130 mA, Vg2=Open -25 -20 -15 -10 Frequency (GHz) Input Return Loss (dB) +95 Dec C -30 Deg C +25 Deg C *Includes fixture losses XB1008-BD Vd=4.0 V, Id=130 mA, Vg2=Open -30 -25 -20 -15 -10 Frequency (GHz) Output Return Loss (dB) +95 Deg C -30 Deg C +25 Deg C *Includes fixture losses XB1008-BD Vd=4.0 V, Id=130 mA, Vg2=Open Pin=+10 dBm 19.0 19.5 20.0 20.5 21.0 21.5 22.0 22.5 23.0 23.5 24.0 Frequency (GHz) Saturated Output Power (dBm) +95 deg C -30 deg C +25 deg C Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. March 2007 - Rev 06-Mar-07

Buffer Amplifier Measurements (cont.) Page 3 of 9 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD XB1008-BD Vd=4.5 V, Id=130 mA, Vg2=Open Frequency (GHz) Gain (dB) +95 Deg C -30 Deg C +25 Deg C XB1008-BD Vd=4.5 V, Id=130 mA, Vg2=Open -90 -80 -70 -60 -50 -40 -30 -20 -10 Frequency (GHz) Reverse Isolation (dB) +95 Deg C -30 Deg C +25 Deg C XB1008-BD Vd=4.5 V, Id=130 mA, Vg2=Open -25 -20 -15 -10 Frequency (GHz) Input Return Loss (dB) +95 Dec C -30 Deg C +25 Deg C *Includes fixture losses XB1008-BD Vd=4.5 V, Id=130 mA, Vg2=Open -30 -25 -20 -15 -10 Frequency (GHz) Output Return Loss (dB) +95 Deg C -30 Deg C +25 Deg C *Includes fixture losses Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. March 2007 - Rev 06-Mar-07

Buffer Amplifier Measurements (cont.) Page 4 of 9 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD XB1008-BD Vd=5.0 V, Id=130 mA, Vg2=Open Frequency (GHz) Gain (dB) +95 Deg C -30 Deg C +25 Deg C XB1008-BD Vd=5.0 V, Id=130 mA, Vg2=Open -90 -80 -70 -60 -50 -40 -30 -20 -10 Frequency (GHz) Reverse Isolation (dB) +95 Deg C -30 Deg C +25 Deg C XB1008-BD Vd=5.0 V, Id=130 mA, Vg2=Open -25 -20 -15 -10 Frequency (GHz) Input Return Loss (dB) +95 Dec C -30 Deg C +25 Deg C *Includes fixture losses XB1008-BD Vd=5.0 V, Id=130 mA, Vg2=Open -30 -25 -20 -15 -10 Frequency (GHz) Output Return Loss (dB) +95 Deg C -30 Deg C +25 Deg C *Includes fixture losses Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. March 2007 - Rev 06-Mar-07

Buffer Amplifier Measurements (cont.) Page 5 of 9 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD XB1008-BD Vd=See Legend, Id=130 mA, Vg2=Open Frequency (GHz) Gain (dB) Vd=4.0V Vd=4.5V Vd=5.0 V XB1008-BD Vd=See Legend, Id=130 mA, Vg1=Open 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) Noise Figure (dB) Vd=4.0V Vd=4.5 V Vd=5.0 V XB1008-BD Vd=5.0 V, Id=130 mA, Vg2=Open 0123456789 1 0 1 1 1 2 1 3 Output Power SCL (dBm) Output Third Order Intermods (dBc)

11.0 GHz

12.0 GHz

13.0 GHz

14.0 GHz

15.0 GHz

16.0 GHz

17.0 GHz

18.0 GHz

XB1008-BD Vd=5.0 V, Id=130 mA, Vg2=Open 0123456789 1 0 1 1 1 2 1 3 Output Power SCL (dBm) Output Third Order Intercept (dBm) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. March 2007 - Rev 06-Mar-07

10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD Typcial S-Parameter Data for XB1008-BD Vd=4.5 V, Id=130 mA Frequency S11 S11 S21 S21 S12 S12 S22 S22 (GHz) (Mag) (Ang) (Mag) (Ang) (Mag) (Ang) (Mag) (Ang) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. March 2007 - Rev 06-Mar-07

1.100 (0.043) 2 3 0.355 (0.014) 0.955 (0.038) 1.100 (0.043) 0.0 0.0 0.310 (0.012) 0.310 (0.012) 0.560 (0.022) Page 7 of 9 Mechanical Drawing Bias Arrangement Bypass Capacitors - See App Note [2] (Note: Engineering designator is 15MPA0857) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Bond Pad #1 (RF In) Bond Pad #2 (Vg1) Bond Pad #3 (Vd) Bond Pad #4 (RF Out) Bond Pad #5 (Vg2) 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. March 2007 - Rev 06-Mar-07

App Note [1] Biasing - It is recommended to bias this device at Vd=4.5V with Id=130 mA and Vg2=-0.5V with Vg1 left open. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.5V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement - For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd and Vg1,2) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. MTTF Graphs These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD XB1008-BD Vd=4.0 V Id=130 mA 1.00E+05 1.00E+06 1.00E+07 1.00E+08 1.00E+09 55 65 75 85 95 105 115 125 Backplate Temperature (deg C) MTTF (hours) XB1008-BD Vd=4.0 V Id=130 mA 1.00E+00 1.00E+01 1.00E+02 1.00E+03 1.00E+04 55 65 75 85 95 105 115 125 Backplate Temperature (deg C) FITS XB1008-BD Vd=4.0 V Id=130 mA 130 132 134 136 138 140 142 144 146 148 150 152 154 156 158 160 162 55 65 75 85 95 105 115 125 Backplate Temperature (deg C) Rth (deg C/W) XB1008-BD Vd=4.0 V Id=130 mA 120 130 140 150 160 170 180 190 200 210 220 55 65 75 85 95 105 115 125 Backplate Temperature (deg C) Tch (deg C) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. March 2007 - Rev 06-Mar-07

Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided). The work station temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Part Number for Ordering Description XB1008-BD-000V Where “V” is RoHS compliant die packed in vacuum release gel paks XB1008-BD-EV1 XB1008 die evaluation module 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. March 2007 - Rev 06-Mar-07