XB1006

XB1006 MIMIX | Alldatasheet

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High Dynamic Range/Positive Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 3.2 dB Noise Figure at Low Noise Bias +15 dBm P1dB Compression Point at Power Bias 100% On-Wafer RF , DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Parameter Units GHz dB dB dB dB dB dB dBm dBm dBm VDC VDC mA Min. 18.0 4.0 7.0 19.0 40.0 +14.0 -1.2 Typ. 14.0 12.0 21.0 +/-2.0 50.0 3.2 +15.0 +25.0 +18.0 +3.5 -0.3 Max. 38.0 27.0 4.5 +5.5 +0.1 100 Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 120 mA +0.3 VDC +5 dBm -65 to +165 OC -55 to MTTF Table MTTF Table Chip Device Layout (1) Optional low noise bias Vd1,2=3.5V, Id=50mA will typically yield 3-4dB decreased P1dB and OIP3. (2) Measured using constant current. (3) Unless otherwise indicated, min/max over 18.0-38.0 GHz and biased at Vd=5.5V, Id1=50mA, Id2=50mA. (4) Unless otherwise indicated, min/max over 20.0-38.0 GHz and biased at Vd=3.5V, Id1=25mA, Id2=25mA. (5) Channel temperature affects a device's MTBF. It is recommended to keep channel temperature as low as possible for maximum life. 1,2,3 1,2,3 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Mimix Broadband’s three stage 18.0-38.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 21.0 dB with a positive gain slope, and a noise figure of 3.2 dB across the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Electrical Characteristics (Ambient T emperature T = 25 oC) Absolute Maximum Ratings Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness (∆S21) Reverse Isolation (S12) Noise Figure (NF) Output Power for 1 dB Compression (P1dB) Output Third Order Intercept Point (OIP3) Saturated Output Power (Psat) Drain Bias Voltage (Vd1,2) Gate Bias Voltage (Vg1,2) Supply Current (Id) (Vd=3.5V, Vg=-0.3V Typical) April 2005 - Rev 01-Apr-05 B1006 1,2,3

Page 2 of 14Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Buffer Amplifier Measurements 18.0-38.0 GHz GaAs MMIC Buffer Amplifier April 2005 - Rev 01-Apr-05 B1006 XB1006 Vd1,2=3.5 V Id1=25 mA, Id2=25 mA ~190 Devices Frequency (GHz) Gain (dB) Max Median Mean -3sigma XB1006 Vd1,2=3.5 V Id1=25 mA, Id2=25 mA ~190 Devices -80 -70 -60 -50 -40 -30 -20 -10 Frequency (GHz) Reverse Isolation (dB) Max Median Mean -3sigma XB1006 Vd1,2=3.5 V Id1=25 mA, Id2=25 mA ~190 Devices -35 -30 -25 -20 -15 -10 Frequency (GHz) Input Return Loss (dB) Max Median Mean -3sigma XB1006 Vd1,2=3.5 V Id1=25 mA, Id2=25 mA ~190 Devices -30 -25 -20 -15 -10 Frequency (GHz) Output Return Loss (dB) Max Median Mean -3sigma XB1006 Vd1,2=3.5 V Id1=25 mA, Id2=25 mA ~200 Devices 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 Frequency (GHz) Noise Figure (dB) Max Median Mean -3sigma XB1006 Vd1,2=3.5 V Id1=25 mA, Id2=25 mA ~210 Devices Frequency (GHz) Output Power P1dB (dBm) Max Median Mean -3sigma XB1006 Vd1,2=3.5 V Id1=25 mA, Id2=25 mA ~30 Devices Frequency (GHz) Output Power Psat (dBm) Max Median Mean -3sigma

Page 3 of 14Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Buffer Amplifier Measurements (cont.) 18.0-38.0 GHz GaAs MMIC Buffer Amplifier B1006 XB1006 Vd1,2=3.5 V Id1=25 mA, Id2=25 mA ~810 Devices -80 -70 -60 -50 -40 -30 -20 -10 Frequency (GHz) Reverse Isolation (dB) Max Median Mean -3sigma XB1006 Vd1,2=3.5 V Id1=25 mA, Id2=25 mA ~810 Devices -40 -35 -30 -25 -20 -15 -10 Frequency (GHz) Input Return Loss (dB) Max Median Mean -3sigma XB1006 Vd1,2=3.5 V Id1=25 mA, Id2=25 mA ~810 Devices -30 -25 -20 -15 -10 Frequency (GHz) Output Return Loss (dB) Max Median Mean -3sigma April 2005 - Rev 01-Apr-05 XB1006 Vd1,2=3.5 V Id1=25 mA, Id2=25 mA ~810 Devices Frequency (GHz) Gain (dB) Max Median Mean -3sigma

Page 4 of 14Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Buffer Amplifier Measurements (cont.) 18.0-38.0 GHz GaAs MMIC Buffer Amplifier B1006 XB1006 Vd1,2=5.5 V Id1=50 mA, Id2=50 mA ~210 Devices Frequency (GHz) Output Power P1dB (dBm) Max Median Mean -3sigma XB1006 Vd1,2=5.5 V Id1=50 mA, Id2=50 mA ~30 Devices Frequency (GHz) Output Power Psat (dBm) Max Median Mean -3sigma April 2005 - Rev 01-Apr-05 XB1006 Vd1,2=5.5 V Id1=50 mA, Id2=50 mA ~190 Devices Frequency (GHz) Gain (dB) Max Median Mean -3sigma XB1006 Vd1,2=5.5 V Id1=50 mA, Id2=50 mA ~190 Devices -80 -70 -60 -50 -40 -30 -20 -10 Frequency (GHz) Reverse Isolation (dB) Max Median Mean -3sigma XB1006 Vd1,2=5.5 V Id1=50 mA, Id2=50 mA ~190 Devices -30 -25 -20 -15 -10 Frequency (GHz) Input Return Loss (dB) Max Median Mean -3sigma XB1006 Vd1,2=5.5 V Id1=50 mA, Id2=50 mA ~190 Devices -25 -20 -15 -10 Frequency (GHz) Output Return Loss (dB) Max Median Mean -3sigma XB1006 Vd1,2=5.5 V Id1=50 mA, Id2=50 mA ~200 Devices 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 Frequency (GHz) Noise Figure (dB) Max Median Mean -3sigma

14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 Frequency (GHz) XB1006_S21 Vd=3.5V, Id1=9mA, Id2=16mA, Id3=27mA Page 5 of 14Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Buffer Amplifier Measurements (cont.) 18.0-38.0 GHz GaAs MMIC Buffer Amplifier B1006 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 Frequency (GHz) XB1006_S12 Vd=3.5V, Id1=6mA, Id2=16mA, Id3=27mA -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 Frequency (GHz) XB1006_S11 Vd=3.5V, Id1=6mA, Id2=16mA, Id3=27mA -38 -36 -34 -32 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 Frequency (GHz) XB1006_S22 Vd=3.5V, Id1=6mA, Id2=16mA, Id3=27mA -24 -22 -20 -18 -16 -14 -12 -10 April 2005 - Rev 01-Apr-05

Page 6 of 14Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. S-Parameters 18.0-38.0 GHz GaAs MMIC Buffer Amplifier April 2005 - Rev 01-Apr-05 B1006 Typical S-Parameter Data for XB1006 Vd=3.5 V Id1=25 mA Id2=25 mA Frequency S11 Mag S11 Phase S12 Mag S12 Phase S21 Mag S21 Phase S22 Mag S22 Phase (GHz) dB Ango dB Ango dB Ango dB Ango

Page 7 of 14Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. S-Parameters (cont.) 18.0-38.0 GHz GaAs MMIC Buffer Amplifier B1006 Typical S-Parameter Data for XB1006 (cont'd) Vd=3.5 V Id1=25 mA Id2=25 mA Frequency S11 Mag S11 Phase S12 Mag S12 Phase S21 Mag S21 Phase S22 Mag S22 Phase (GHz) dB Ango dB Ango dB Ango dB Ango April 2005 - Rev 01-Apr-05

Page 8 of 14Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. S-Parameters (cont.) 18.0-38.0 GHz GaAs MMIC Buffer Amplifier B1006 Typical S-Parameter Data for XB1006 Vd=5.5 V Id1=50 mA Id2=50 mA Frequency S11 Mag S11 Phase S12 Mag S12 Phase S21 Mag S21 Phase S22 Mag S22 Phase (GHz) dB Ango dB Ango dB Ango dB Ango April 2005 - Rev 01-Apr-05

Page 9 of 14Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. S-Parameters (cont.) 18.0-38.0 GHz GaAs MMIC Buffer Amplifier B1006 Typical S-Parameter Data for XB1006 (cont'd) Vd=5.5 V Id1=50 mA Id2=50 mA Frequency S11 Mag S11 Phase S12 Mag S12 Phase S21 Mag S21 Phase S22 Mag S22 Phase (GHz) dB Ango dB Ango dB Ango dB Ango April 2005 - Rev 01-Apr-05

Page 10 of 14Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. S-Parameters (cont.) 18.0-38.0 GHz GaAs MMIC Buffer Amplifier B1006 Typical S-Parameter Data for XB1006 (cont'd) Vd=5.5 V Id1=50 mA Id2=50 mA Frequency S11 Mag S11 Phase S12 Mag S12 Phase S21 Mag S21 Phase S22 Mag S22 Phase (GHz) dB Ango dB Ango dB Ango dB Ango April 2005 - Rev 01-Apr-05

Bypass Capacitors - See App Note [2] Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. (Note: Engineering designator is 28LN3UA0102) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Bond Pad #1 (RF In) Bond Pad #2 (Vd1) Bond Pad #3 (Vd2) Bond Pad #4 (RF Out) Bond Pad #5 (Vg2) Bond Pad #6 (Vg1) 18.0-38.0 GHz GaAs MMIC Buffer Amplifier B1006 0.671 (0.026) 1.270 (0.050) 0.853 (0.034) 1.453 (0.057) 1.298 (0.051) 0.950 (0.037) 0.0 0.0 2.000 (0.079) 0.376 (0.015) Vd2 RF In RF Out Vg1 Vd1 Vg2 April 2005 - Rev 01-Apr-05

App Note [1] Biasing - As shown in the bonding diagram, this device can be operated with all three stages in parallel, and can be biased for low noise performance or high power performance. Low noise bias is nominally Vd=3.5V, Id=50mA. More controlled performance will be obtained by separately biasing Vd1 and Vd2 each at 3.5V, 25mA. Power bias may be as high as Vd=5.5V, Id=100mA with all stages in parallel, or most controlled performance will be obtained by separately biasing Vd1 and Vd2 each at 5.5V, 50mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement - For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (~100-200 pf ) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd1,2 and Vg1,2) needs to have DC bypass capacitance (~100-200 pf ) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. MTTF T ables Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature 83.0 deg Celsius 105.1 deg Celsius 127.0 deg Celsius FITs 1.21E-02 1.88E-01 2.11E+00 MTTF Hours 8.28E+10 5.33E+09 4.75E+08 Rth 159.9° C/W 171.9° C/W 182.6° C/W Bias Conditions: Vd1=Vd2=3.5V, Id1=25 mA, Id2=25 mA Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature 149.1 deg Celsius 175.4 deg Celsius 201.0 deg Celsius FITs 1.23E+01 1.26E+02 9.63E+02 MTTF Hours 8.14E+07 7.93E+06 1.04E+06 Rth 171.2° C/W 182.5° C/W 192.8° C/W Bias Conditions: Vd1=Vd2=5.5V, Id1=50 mA, Id2=50mA These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. 18.0-38.0 GHz GaAs MMIC Buffer Amplifier B1006April 2005 - Rev 01-Apr-05

Page 13 of 14Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Device Schematic 18.0-38.0 GHz GaAs MMIC Buffer Amplifier B1006 R=30 R=16.7 R=12.5 R=20 R=30 R=30 R=20 R=5 R=10 R=7.14 R=5 R=5R=5 RF Out RF In Vg1 Vd1 Vd2 Vg2 April 2005 - Rev 01-Apr-05

Page 14 of 14Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti- static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. 18.0-38.0 GHz GaAs MMIC Buffer Amplifier B1006April 2005 - Rev 01-Apr-05