XB1004-BD-000V

XB1004-BD MIMIX | Alldatasheet

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Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias +19.0 dBm P1dB Compression Point at Power Bias 100% On-Wafer RF , DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Parameter Units GHz dB dB dB dB dB dB dBm dBm dBm VDC VDC mA Min. 16.0 6.0 10.0 18.0 40.0 -1.2 Typ. 14.0 14.0 21.0 +/-1.0 50.0 2.2 +19.0 +29.0 +22.0 +4.0 -0.3 Max. 30.0 24.0 3.0 +6.0 +0.1 180 Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.5 VDC 200 mA +0.3 VDC +5 dBm -65 to +165 OC -55 to MTTF Table MTTF Table Chip Device Layout (1) Optional low noise bias Vd1,2=4.0V, Id=90mA will typically yield 3-4dB decreased P1dB and OIP3. (2) Measured using constant current. (3) Unless otherwise indicated Min/Max over 17.0-28.0 GHz and biased at Vd=6.0V, Id1=90mA, Id2=90mA. (4) Unless otherwise indicated Min/Max over 17.0-28.0 GHz and biased at Vd=4.0V, Id1=45mA, Id2=45mA. (5) Channel temperature affects a device's MTBF. It is recommended to keep channel temperature as low as possible for maximum life. 1,2,3 1,2,3 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Mimix Broadband’s three stage 16.0-30.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 21.0 dB with a noise figure of 2.2 dB across the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Electrical Characteristics (Ambient T emperature T = 25 oC) Absolute Maximum Ratings Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Noise Figure (NF) Output Power for 1 dB Compression (P1dB) Output Third Order Intercept Point (OIP3) Saturated Output Power (Psat) Drain Bias Voltage (Vd1,2) Gate Bias Voltage (Vg1c,2c) Supply Current (Id) (Vd=4.0V, Vg=-0.3V Typical) June 2007 - Rev 12-Jun-07 B1004-BD Page 1 of 10 1,2,3

16.0-30.0 GHz GaAs MMIC Buffer Amplifier Page 2 of 10 Buffer Amplifier Measurements XB1004-BD Vd1,2=4.0 V Id1=22.5 mA, Id2=45 mA ~7000 Devices Frequency (GHz) Gain (dB) + 3 sigma Median Mean - 3 sigma XB1004-BD Vd1,2=4.0 V Id1=22.5 mA, Id2=45 mA ~7000 Devices -80 -70 -60 -50 -40 -30 -20 -10 Frequency (GHz) Reverse Isolation (dB) Max Median Mean - 3 sigma XB1004-BD Vd1,2=4.0 V Id1=22.5 mA, Id2=45 mA ~7000 Devices -22 -20 -18 -16 -14 -12 -10 Frequency (GHz) Output Return Loss (dB) + 3 sigma Median Mean - 3 sigma XB1004-BD Vd1,2=4.0 V Id1=22.5 mA, Id2=45 mA ~7000 Devices -22 -20 -18 -16 -14 -12 -10 Frequency (GHz) Input Return Loss (dB) + 3 sigma Median Mean - 3 sigma Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. June 2007 - Rev 12-Jun-07 B1004-BD

16.0-30.0 GHz GaAs MMIC Buffer Amplifier Page 3 of 10 Buffer Amplifier Measurements (cont.) XB1004-BD Vd1,2=4.0 V Id1=45 mA, Id2=45 mA ~3460 Devices 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Frequency (GHz) Noise Figure (dB) Max Median Mean -3sigma Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. June 2007 - Rev 12-Jun-07 B1004-BD XB1004-BD Vd1,2=4.0 V Id1=45 mA, Id2=45 mA ~10210 Devices Frequency (GHz) Gain (dB) Max Median Mean -3sigma XB1004-BD Vd1,2=4.0 V Id1=45 mA, Id2=45 mA ~10280 Devices -80 -70 -60 -50 -40 -30 -20 -10 Frequency (GHz) Reverse Isolation (dB) Max Median Mean -3sigma XB1004-BD Vd1,2=4.0 V Id1=45 mA, Id2=45 mA ~10280 Devices -25 -20 -15 -10 Frequency (GHz) Input Return Loss (dB) Max Median Mean -3sigma XB1004-BD Vd1,2=4.0 V Id1=45 mA, Id2=45 mA ~10210 Devices -25 -20 -15 -10 Frequency (GHz) Output Return Loss (dB) +3sigma Median Mean -3sigma

16.0-30.0 GHz GaAs MMIC Buffer Amplifier Page 4 of 10 Buffer Amplifier Measurements (cont.) XB1004-BD Vd1,2=4.0 V Id1=90 mA, Id2=90 mA ~3200 Devices Frequency (GHz) Gain (dB) Max Median Mean -3sigma XB1004-BD Vd1,2=4.0 V Id1=90 mA, Id2=90 mA ~3200 Devices -90 -80 -70 -60 -50 -40 -30 -20 -10 Frequency (GHz) Reverse Isolation (dB) Max Median Mean -3sigma XB1004-BD Vd1,2=4.0 V Id1=90 mA, Id2=90 mA ~3200 Devices -20 -18 -16 -14 -12 -10 Frequency (GHz) Input Return Loss (dB) Max Median Mean -3sigma XB1004-BD Vd1,2=4.0 V Id1=90 mA, Id2=90 mA ~3200 Devices -20 -18 -16 -14 -12 -10 Frequency (GHz) Output Return Loss (dB) Max Median Mean -3sigma Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. June 2007 - Rev 12-Jun-07 B1004-BD

16.0-30.0 GHz GaAs MMIC Buffer Amplifier Page 5 of 10 Buffer Amplifier Measurements at Power Bias XB1004-BD_R2C2: Pout vs. freq_R2C2 16 18 20 22 24 26 28 30 32 34 36 freq (GHz) Pout (dBm) XB1004-BD: Pout vs. freq at -10, -3 and 7dBm 16 18 20 22 24 26 28 30 32 34 36 freq (GHz) Pout (dBm) XB1004-BD_R3C3: OP1dB 18 20 22 24 26 28 30 32 34 Freq (GHz) OP1dB (dBm) OP1dB Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. June 2007 - Rev 12-Jun-07 B1004-BD

16.0-30.0 GHz GaAs MMIC Buffer Amplifier Page 6 of 10 S-Parameters Typical S-Parameter Data for XB1004-BD Vd=4 V Id1=45 mA Id2=45 mA Frequency S11 Mag S11 Phase S12 Mag S12 Phase S21 Mag S21 Phase S22 Mag S22 Phase (GHz) dB Ango dB Ango dB Ango dB Ango Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. June 2007 - Rev 12-Jun-07 B1004-BD

16.0-30.0 GHz GaAs MMIC Buffer Amplifier Page 7 of 10 Mechanical Drawing Bias Arrangement Bypass Capacitors - See App Note [2] (Note: Engineering designator is 22LN3UA0279) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Bond Pad #1 (RF In) Bond Pad #2 (Vd1) Bond Pad #3 (Vd2) Bond Pad #4 (RF Out) Bond Pad #5 (Vg2c) Bond Pad #6 (Vg2b) Bond Pad #7 (Vg2a) Bond Pad #8 (Vg1c) Bond Pad #9 (Vg1b) Bond Pad #10 (Vg1a) RF In Vd1,2 RF Out Vg1c, Vg2c 1.760 (0.069) 0.798 (0.031) 5678910 1.500 (0.059) 0.0 0.0 1.359 (0.054) 1.958 (0.077) 1.560 (0.061) 1.158 (0.046) 0.958 (0.038) 2.330 (0.092) 0.798 (0.031) 1.290 (0.051) 1.892 (0.074) 5678910 Vd1,2 RF In RF Out Vg1,2 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. June 2007 - Rev 12-Jun-07 B1004-BD XB1004-BD

16.0-30.0 GHz GaAs MMIC Buffer Amplifier Page 8 of 10 App Note [1] Biasing - As shown in the bonding diagram, this device can be operated with all three stages in parallel, and can be biased for low noise performance or high power performance. Low noise bias is nominally Vd=4V, Id=90mA. More controlled performance will be obtained by separately biasing Vd1 and Vd2 each at 4.0V, 45mA. Power bias may be as high as Vd=6.0V, Id=180mA with all stages in parallel, or most controlled performance will be obtained by separately biasing Vd1 and Vd2 each at 6.0V, 90mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement - For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (~100-200 pf ) can be combined. The suggested configuration is to connect Vd1,2 and Vg1c,2c. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. For Individual Stage Bias (Low Input Drive applications only) -- Each DC pad (Vd1,2 and Vg1a,2a,2b) needs to have DC bypass capacitance (~100-200 pf ) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. For Individual Stage Bias (High Input Drive applications only) -- Each DC pad (Vd1,2 and Vg1c,2c) needs to have DC bypass capacitance (~100-200 pf ) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. MTTF T ables Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature 83.4 deg Celsius 105.5 deg Celsius 127.4 deg Celsius FITs 1.87E-02 2.84E-01 3.13E+00 MTTF Hours 5.36E+10 3.52E+09 3.20E+08 Rth 78.8° C/W 84.7° C/W 90.0° C/W Bias Conditions: Vd1=Vd2=4.0V, Id1=45 mA, Id2=45 mA Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature 108.3 deg Celsius 132.1 deg Celsius 155.5 deg Celsius FITs 3.91E-01 5.04E+00 4.72E+01 MTTF Hours 2.56E+09 1.99E+08 2.12E+07 Rth 76.1° C/W 81.5° C/W 86.4° C/W Bias Conditions: Vd1=Vd2=5.0V, Id1=70 mA, Id2=70 mA Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature 138.1 deg Celsius 163.7 deg Celsius 188.8 deg Celsius FITs 9.22E+00 9.82E+01 7.73E+02 MTTF Hours 1.08E+08 1.02E+07 1.29E+06 Rth 77.0° C/W 82.1° C/W 86.8° C/W Bias Conditions: Vd1=Vd2=6.0V, Id1=90 mA, Id2=90 mA These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. June 2007 - Rev 12-Jun-07 B1004-BD

16.0-30.0 GHz GaAs MMIC Buffer Amplifier Page 9 of 10 T ypical Application Mimix Broadband MMIC-based 17.0-27.0 GHz Transmitter Block Diagram (Changing LO and IF frequencies as required allows design to operate as high as 27 GHz) IF IN

2 GHz

XB1004-BD XP1000-BDXU1000-BD WG Sideband Reject On-Chip Temp Comp Detector LO(+12dBm) 15.7-17.7 GHz (USB Operation) 19.7-21.7 GHz (LSB Operation) RF Out 17.7-19.7 GHz Device Schematic RFoutRFin Vd1 Vd2 Vg1a Vg1b Vg1c Vg2a Vg2b Vg2c R=20.0 R=5.0 R=12.5 R=35.0 R=5.0 R=35.0 R=10.0 R=30.0 R=250.0 R=500.0 R=500.0 R=30.0 R=20.0 R=30.0 R=500.0 R=20.0 R=20.0 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. June 2007 - Rev 12-Jun-07 B1004-BD

16.0-30.0 GHz GaAs MMIC Buffer Amplifier Page 10 of 10 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. June 2007 - Rev 12-Jun-07 B1004-BD Handling and Assembly Information

Ordering Information

CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:

• Do not ingest.  Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.  Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided). The work station temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Part Number for Ordering Description XB1004-BD-000V Where “V” is RoHS compliant die packed in vacuum release gel paks XB1004-BD-000W Where “W” is RoHS compliant die packed in waffle trays XB1004-BD-EV1 XB1004 die evaluation module