2N4351 CALOGIC | Alldatasheet

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Technical content

N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 2N4351

FEATURES

  • • Low ON Resistance
  • • Low Capacitance
  • • High Gain
  • • High Gate Breakdown Voltage
  • • Low Threshold Voltage ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Derate above 25 NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

ORDERING INFORMATION

Part Package Temperature Range 2N4351 Hermetic TO-72 -55 oC to +150oC X2N4351 Sorted Chips in Carriers -55oC to +150oC CORPORATION PIN CONFIGURATION TO-72 G D C S ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS BV DSS Drain-Source Breakdown Voltage 25 V I D = 10µA, VGS = 0 IGSS Gate Leakage Current 10 pA V GS = ±30V, VDS = 0 IDSS Zero-Gate-Voltage Drain Current 10 nA V DS = 10V, VGS = 0 VGS(th) Gate-Source Threshold Voltage 1 5 V V DS = 10V, ID = 10µA ID(on) "ON" Drain Current 3 mA V GS = 10V, VDS = 10V VDS(on) Drain-Source "ON" Voltage 1 V I D = 2mA, VGS = 10V rDS(on) Drain-Source Resistance 300 ohms V GS = 10V, ID = 0, f = 1kHz | yfs | Forward Transfer Admittance 1000 µSV DS = 10V, ID = 2mA, f = 1kHz C rss Reverse Transfer Capacitance (Note 2) 1.3 pF VDS = 0, VGS = 0, f = 1MHz C iss Input Capacitance (Note 2) 5.0 V DS = 10V, VGS = 0, f = 1MHz C d(sub) Drain-Substrate Capacitance (Note 2) 5.0 V D(SUB) = 10V, f = 1MHz td(on) Turn-On Delay (Note 2) 45 nstr Rise Time (Note 2) 65 td(off) Turn-Off Delay (Note 2) 60 tf Fall Time (Note 2) 100 NOTES: 1. Device must not be tested at ±125V more than once or longer than 300ms. 2.For design reference only, not 100% tested. 1003