SD310 CALOGIC | Alldatasheet

Document overview

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Technical content

FEATURES

  • • Low Feedthrough and Feedback Transients
  • • Low Capacitance:
  • • No Protection Diode from Gate to Substrate for very high impedance applications

APPLICATIONS

SD310:

  • • Analog Switch Driver SD312 and SD314:
  • • Analog Switches
  • • High-Speed Digital Switches
  • • Multiplexers
  • • A to D Converters
  • • D to A Converters
  • • Choppers
  • • Sample & Hold

DESCRIPTION

The Calogic SD310 is a 30V analog switch driver without a built-in protection diode from gate to substrate for use with SD312 and SD314 DMOS analog switches. The SD312 is a high performance, high-speed, high-voltage, and low resistance analog switch capable of switching ±5V signals. The maximum threshold of 2V permits simple direct TTL an CMOS driving for small applications. The SD314 is DMOS analog switch capable of switching ±10V analog signals with all other parameters identical to those of SD312. All three devices are manufactured with an implanted high-speed, high-voltage, and low resistance double-diffused MOS (DMOS) process. SD310, SD312 and SD314 devices also have no built-in protection diode to enhance performance in high impedance circuits. The devices are available in 4-lead hermetic TO-72 package and in die form for hybrid applications. Custom devices based on SD310, SD312 and SD314 can also be ordered.

ORDERING INFORMATION

Part Package Temperature Range SD310DE Hermetic TO-72 Package -55 oC to +125oC SD312DE Hermetic TO-72 Package -55 oC to +125oC SD314DE Hermetic TO-72 Package -55 oC to +125oC XSD310 Sorted Chips in Carriers -55 oC to +125oC XSD312 Sorted Chips in Carriers -55 oC to +125oC XSD314 Sorted Chips in Carriers -55 oC to +125oC CORPORATION SCHEMATIC DIAGRAM (Top View) SOURCE BODY AND CASE GATE DRAIN Body is internally connected to the case CD10-2 TO-72 G D C S

Total Device Dissipation at 25oC Case Temperature . . . 1.2W PARAMETER SD310 SD312 SD314 UNIT VDS Drain-to-source +30 +10 +20 V dc VSD Source-to-drain* +10 +10 +20 V dc VDB Drain-to-body +30 +15 +25 V dc VSB Source-to-body +15 +15 +25 V dc VGS Gate-to-source ±40 ±40 ±40 V dc VGB Gate-to-body ±40 ±40 ±40 V dc VGD Gate-to-drain ±40 ±40 ±40 V dc SD310 / SD312 / SD314 CORPORATION SYMBOL PARAMETER SD310 SD312 SD314 UNITS TEST CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX BREAKDOWN VOLTAGE BV DS Drain-to-source 30 35 V VGS = VBS = 0V, ID = 10µA 10 25 10 25 20 25 V GS = VBS = -5V, IS = 10nA BV SD Source-to drain 10 10 20 V GD = VBD = -5V, ID = 10nA BV DB Drain-to-body 15 15 25 VGB = 0V, source OPEN, ID = 10nA BV SB Source-to-body 15 15 25 VGB = 0V, drain OPEN, IS = 10µA LEAKAGE CURRENT IDS (OFF) Drain-to-source 11 0 11 0 nA VGS = VBS = -5V, VDS = +10V 11 0 VGS = VBS = -5V, VDS = +20V ISD (OFF) Source-to-drain 11 0 11 0 VGS = VBD = -5V, VSD = +10V 11 0 VGS = VBD = -5V, VSD = +20V IGBS Gate 0.1 0.1 0.1 V DB = VSB = 0V, VGS = ±40V rDS (ON) Drain-to-source resistance 30 50 30 50 30 50 Ω ID = 1.0mA, VSB = 0, VGS = +5V 20 35 20 35 20 35 ID = 1.0mA, VSB = 0, VGS = +10V 15 25 15 15 ID = 1.0mA, VSB = 0, VGS = +15V SYMBOL PARAMETER SD310 SD312 SD314 UNITS TEST CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX gfs Forward transconductance 15 20 15 20 15 20 mmhos VDS = 10V, VSB = 0V, ID = 20mA, f = 1kHz SMALL SIGNAL CAPACITANCES (See capacitance model) C pF VDS = 10V, f = 1MHz VGS = VBS = -15V AC ELECTRICAL CHARACTERISTICS DC ELECTRICAL CHARACTERISTICS (TA = 25oC, unless other specified.)

.500 (12.70) BOTTOM VIEW .048 .028 .046 .036 (1.16) (.91) .100 (2.54) .030 (.76) .230 .209 (5.84) (5.31) .195 .178 45o (1.21) (.72) (4.95) (4.53)

4 LEADS

.210 .170 TO-72 (.53) (.41) (5.33) (4.32) .021 .016 0.50 (1.27) SD310 / SD312 / SD314 CORPORATION