WW263 NJSEMI | Alldatasheet
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J.E.IIZU ^zmi-Conductoi ^Pioaucti, Dnc. 20 STERN AVE. TELEPHONE: (973) 376-2922 SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 WW263 (NPN) & WW264 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The WW263 (NPN) and WW264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low-speed switching applications. Features:
- High DC Current Gain: hFE = 2500 Typ (WW263) = 3500 Typ (WW264)
- Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V Min
- Low Collector-Emitter Saturation Voltage: VCE(sat)= 2VMax@lc = 5A
- Monolithic Construction with Built-in Base-Emitter Shunt Resistor Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO 100V Collector-Base Voltage, VCB 100V Emitter-Base Voltage, VEB 5V Collector Current, IQ Continuous 10A Peak 15A Base Current, IB 250mA Total Power Dissipation (Tc = +25°C), PD 65W Derate Above 25°C 0.52W/°C Total Power Dissipation (TA = +25°C), PD 2W Derate Above 25°C 0.016W/°C Operating Junction Temperature range, Tj -65° to +150°C Storage Temperature range, Tstg -65° to +150°C Thermal Resistance, Junction-to-Case, RthJC 1.92°C/W Thermal Resistance, Junction-to-Ambient, RthJA 62.5°C/W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Electrical Characteristics: (Tc = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(SUS) 'CEO 'CEX IEBO lc = 200mA, IB = 0, Note 1 VCE = 100V, IB = 0 VCE = 100V,VEB(off) = 1.5V VCE = 100V, VEB(0ff) = 1.5V, Tc = +125°C VBE = 5V, lc = 0 100 1.0 300 y mA HA mA mA ON Characteristics (Note 1) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage HFE VcE(sat) vBE(on) lc = 5A, VCE = 3V lc = 10A, VCE = 3V IC = 5A, IB = 0.01A lc= 10A, IB = 0.1A lc = 3A, VCE = 3V IC = 10A, VCE = 3V 1000 100 20000 2.8 4.5 V V V V Dynamic Characteristics Small-Signal Current Gain Output Capacitance Small-Signal Current Gain Ihfel C0b hfe lc=1A,VcE = 5V,ftest=1MHz VCB = 10V, IE = 0, f=1MHz lc = 1A, VCE = 5V, f = 1kHz 1000 200 PF Note 1. Pulse Test: Pulse Width < 300ns, Duty Cycle < 2%. .no" -H (2.79) .500"(I2. MAX .500"(I2.7) MIN. I .420" (10.67) MAX. .I47"(3.73) MAX. DIA. TAB CONNECTS TO PIN 2 .Ol8"(.457) MAX. .I00"(2.54) C(2)