GBJ2500 NJSEMI | Alldatasheet
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Jsiisu <^£tni-C,on.a.uctoi ,3na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 GBJ2500-GBJ2510 PRV: 50-1000 Volts lo : 25 Amperes FEATURES: * Glass Passivated Die Construction * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2000 VAC @1 Sec * High current capability * Very good heat dissipation * Pb/RoHSFree MECHANICAL DATA: * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight: 8.17 grams (Approximaly ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 SILICON BRIDGE RECTIFIERS RBV25 2.0 ± 0.2- 0.7 ±0.1 *)(" Dimensions in millimeters RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 100 °C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 12.5 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 1 00 °C Thermal Resistance, Junction to Case Operating Junction Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC Ip(AV) IFSM I2t VF IR 'R(H) RSJC L TSTG GBJ GBJ GBJ GBJ 2500 2501 2502 2504 50 100 200 400 35 70 140 280 50 100 200 400 300 510 1.1 500 0.6 - 40 to + 1 - 40 to + 1 GBJ 2506 600 420 600 GBJ 2508 800 560 800 GBJ 2510 1000 700 1000 UNIT V V V A A A2S V UA UA °C/W Note : (1) Thermal resistance from junction to casej>er element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time or'coi coinn to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to veril'v that datasheets are current before placing orders. Quality Semi-Conductors
RATING AND CHARACTERISTIC CURVES ( GBJ2500 - GBJ2510 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES
5 S, g K t
F esistive 25 ~"fi CAS with he: or Indu ctive loa \\ 75 100 125 150 17 = TEMPERATURE, ( °C) FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 r PEAK FORWARD SURGE CURRENT, AMPERES -> "-n o un O m-1 o o o o o s s \\ 25 s SINGLE HALF SINE WAVE JEDEC METHOD s s \\ 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE CO LLJ m a! 10 (-"
- z. UJ % ™FORWARD CU I ° i f f t ulse Width = 300 |is Tj FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) FORWARD VOLTAGE, VOLTS