WPT14G01 WILLSEMI | Alldatasheet

Document overview

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Technical content

Features

 High Voltage：VCEO > -140V  High DC current gain >100  ICM = -10A Peak Pulse Current  Low Saturation Voltage VCE(sat) < -150mV @ -1A

Applications

 Power supply  LED driver Http://www.sh-willsemi.com Pin configuration (Top view) 4G01 = Device Code MT = Special Code Y =Year W =Week Marking Order information Device Package Shipping WPT14G01-3/TR SOT-223 2500/Reel&Tape

Will Semiconductor Ltd. 2 2017/01/15 – Rev.1.0 Absolute Maximum ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO -140 V Collector-base voltage VCBO -180 V Emitter-base voltage VEBO -6 V Continues collector current a IC -4.5 A Continues collector current b -2.8 A Pulse collector current ICM -10 A Power dissipation a PD 1.6 W Power dissipation b 1 W Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55〜155 °C Thermal resistance ratings THERMAL RESISTANCE RATINGS Parameter Symbol Typical Unit Junction-to-Ambient Thermal Resistance a Steady State RθJA 80 ° C/W Junction-to-Ambient Thermal Resistance b Steady State RθJA 120 a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Pulse width=300us,Duty Cycle<2% Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO lc=-1mA, lB=0mA -140 V Collector-base breakdown voltage BVCBO lc=-100uA, lE=0mA -180 V Emitter-base breakdown voltage BVEBO IE=-100uA, lc=0mA -7 V Collector cutoff current ICBO VCB=-150V -50 nA Emitter cutoff current IEBO VEB=-6V -10 nA Collector-emitter saturation voltage c Vce(sat) IC=-1A, lB=-100mA -110 -150 mV IC=-3A, lB=-300mA -275 -350 Base-emitter saturation voltage c Vbe(sat) IC=-2A, lB=-200mA -1.0 -1.5 mV DC current gain c HFE lC=-1A , VCE=-5V 100 220 300 lC=-3A , VCE=-5V 75 150

Will Semiconductor Ltd. 3 2017/01/15 – Rev.1.0 Typical Characteristics (Ta=25oC, unless otherwise noted) 1E-3 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IC/IB=50 VCE(sat)-(V) IC-Collector Current (A) IC/IB=10 Tamb=25 o C 1E-3 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 Tamb=150 o C Tamb=-50 o C Tamb=25 o C IC/IB=10 VCE(sat)-(V) IC-Collector Current (A) 1E-3 0.01 0.1 1 10 100 200 300 400 500 Tamb=-50 o C Tamb=25 o C Tamb=150 o C HFE IC-Collector Current (A) VCE=5V 1E-3 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IC/IB=10 Tamb=150 o C Tamb=25 o C Tamb=100 o C Tamb=-50 o C VBE(sat)-(V) IC-Collector Current (A) 1E-3 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VCE=5V Tamb=150 o C Tamb=25 o C Tamb=100 o C Tamb=-50 o C VBE-(V) IC-Collector Current (A)

Will Semiconductor Ltd. 4 2017/01/15 – Rev.1.0 Package outline dimensions SOT-223