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Technical content

Features

/g122 Ultra low collector-to-emitter saturation voltage /g122 High DC current gain >100 /g122 3A continue collector current /g122 Small package SOT-89-3L.

Applications

/g122 Charging circuit /g122 Power regulator /g122 Other power management in portable equipments Http//:www.willsemi.com SOT-89-3L Pin configuration (Top view) WPT2E33 YYWW WPT2E33 = Device code Y Y = Y e a r W W = W e e k Marking Order information Device Package Shipping WPT2E33-3/TR SOT-89-3L 1000/Reel&Tape C C B E 1 2 3 1 2 3

Will Semiconductor Ltd. 2 Jun, 2011 - Rev.1. 2 Absolute maximum ratings a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width=300µs, Duty Cycle<2% Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Value Unit Collector-emitter voltage VCEO -30 V Collector-base voltage VCBO -30 V Emitter-base voltage VEBO -6 V Continues collector current a -3 A Continues collector current b IC -2 A Pulse collector current c I CM -6 A Power dissipation a 3.0 W Power dissipation b PD 1.5 W Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55~155 °C Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector-emitter breakdown voltage BV CEO I C=-10mA, IB=0mA -30 V Collector-base breakdown voltage BV CBO I C=-1mA, IE=0mA -30 V Emitter-base breakdown voltage BV EBO I E=-100uA, IC=0mA -6 V Collector cutoff current ICBO V CB=-30V -100 nA Emitter cutoff current IEBO V EB=-5V -100 nA Collector-emitter saturation voltage c V CE(sat) I C=-2A, IB=-200mA -0.2 -0.4 V Base-emitter saturation voltage c V BE(sat) I C=-2A, IB=-200mA -1.0 -1.5 V Base-emitter forward voltage VBE(on) I C=-0.5A, VCE=-2V -0.7 -1.0 V DC current gain c h FE I C=-1A , VCE=-2V 100 300

Will Semiconductor Ltd. 3 Jun, 2011 - Rev.1.2 Typical Characteristics (Ta=25oC, unless otherwise noted) Output characteristics DC current gain Power Derating Transfer characteristics C-E saturation voltage vs. Collector current Safe operating area Transient thermal response (Junction-to-Ambient) 0 25 50 75 100 125 150 100 % of Rated Power or IPP Ambient Temperature( O 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -5mA -10mA -20mA -30mA -40mA -50mA IC-Collector Current(A) VCE-Collector to Emitter Voltage(V) 1E-3 0.01 0.1 VCE=-2V Ta=-45 O C Ta=25 O C IC-Collector Current(A) VBE-Base to Emitter Voltage(V) Ta=85 O C 1E-3 0.01 0.1 1 10 500 5000 Ta=-45 O C Ta=25 O CTa=85 O C hFE-DC Current Gain IC-Collector Current(A) 1E-3 0.01 0.1 1 10 100 1000 Ta=25 O C Ta=-45 O C VCE(sat)-Collector Saturation Voltage(V) IC-Collector Current(A) Ta=85 O C 0.01 0.1 1.0 10 100 0.1 1.0 100 /C0109s 1ms 10ms 100ms 1 s DC SINGLE PULSE T a = 25°C COLLECTOR TO EMITTER VOLTAGE: V CE (V) COLLECTOR CURRENT: IC (A) 10-4 10-3 10-2 10-1 600100101 Square Wave Pulse Duration (s) Normalized Transient Thermal Impedance Z 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty = 0.5 1. Duty Cycle, D = 2. RthJA = 42°C/W 3. TJM - TA = PCM x ZthJA 4. Surface Mounted PCM thJA x RthJA

Will Semiconductor Ltd. 4 Jun, 2011 - Rev.1.2 Package outline dimensions SOT-89-3L Dimensions in Millimeters Symbol Min. Max. A 1.400 1.600 b 0.320 0.520 b1 0.400 0.580 c 0.350 0.440 D 4.400 4.600 D1 1.550 Ref. E 2.300 2.600 E1 3.940 4.250 e 1.500 Typ. e1 3.000 Typ. L 0.900 1.200