WPM9435A

WPM9435A WILLSEMI | Alldatasheet

Document overview

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Technical content

Features

 Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage

Applications

 DC/DC converters Power supply converters circuit Load/Power Switching for portable device Http://www.sh-willsemi.com SOP-8L Pin configuration (Top view) 9435 = Device Code PA = Special Code YW = Year&Week Marking Order information Device Package Shipping WPM9435A-8/TR SOP-8L 4000/Tape&Reel V DS (V) Typical R DS(on) (mΩ) -30 33 @ V GS =-10V 43 @ V GS =-4.5V D GS 768 23 4 SS D D D (1) (4) (2) (3) Will Semiconductor Ltd. 1 Jul,2018 Rev.1.2 Single P-Channel, -30V, -6.3A, Power MOSFET

Will Semiconductor Ltd. 2 Jul,2018 Rev.1.2 Absolute Maximum ratings Thermal resistance ratings a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Repetitive rating, pulse width limited by junction temperature, t p =10µs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature T J =150°C. Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±20 Continuous Drain Current a d T A =25°C I D -6.3 -5.0 A T A =70°C -5.1 -4.0 Maximum Power Dissipation a d T A =25°C P D 2.7 1.7 W T A =70°C 1.7 1.1 Continuous Drain Current b d T A =25°C I D -5.5 -4.4 A T A =70°C -4.4 -3.5 Maximum Power Dissipation b d T A =25°C P D 2.1 1.3 W T A =70°C 1.3 0.8 Pulsed Drain Current c I DM -25 A Operating Junction Temperature T J -55 to 150 Lead Temperature T L 260 Storage Temperature Range T stg -55 to 150 Single Operation Parameter Symbol Typical Maximum Unit Junction-to-Ambient Thermal Resistance a t ≤ 10 s R θJA 32 46 °C/W Steady State 60 75 Junction-to-Ambient Thermal Resistance b t ≤ 10 s R θJA 45 60 Steady State 80 95 Junction-to-Case Thermal Resistance Steady State R θJC 16 25

Electronics Characteristics (Ta=25 o C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BV DSS V GS = 0 V, I D = -250uA -30 V Zero Gate Voltage Drain Current I DSS V DS =-24V, V GS = 0V -1 uA Gate-to-source Leakage Current I GSS V DS = 0 V, V GS = ±20V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V GS = V DS , I D Drain-to-source On-resistance R DS(on) V GS =-10V, I D = -4.4A 33 45 mΩ V GS = -4.5V, I D = -3.0A 43 66 Forward Transconductance g FS V DS = -5 V, I D = -5A 6 16 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C ISS V GS = 0 V, f = 1.0MHz, V DS -15 V 1120 pF Output Capacitance C OSS 115 Reverse Transfer Capacitance C RSS Total Gate Charge Q G(TOT) V GS = -10 V, V DS = -15 V, I D =-5 A 18.2 nC Threshold Gate Charge Q G(TH) Gate-to-Source Charge Q GS 3.1 Gate-to-Drain Charge Q GD 2.7 SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) V GS = -10 V, V DS =-15 V, I D =-4.3A, R G =6Ω ns Rise Time tr 10 Turn-Off Delay Time td(OFF) 48 Fall Time tf 10 BODY DIODE CHARACTERISTICS Forward Voltage V SD V GS = 0 V, I S Will Semiconductor Ltd. 3 Jul,2018 Rev.1.2

(Ta=25 o C, unless otherwise noted) Output characteristics On-Resistance vs. Drain current On-Resistance vs. Junction temperature Transfer characteristics On-Resistance vs. Gate-to-source voltage Threshold voltage vs. Temperature 051 01 52 0 V GS =10V V GS =8V VGS=6V I DS-Drai n-to-Source Cu rrent (A) V DS-Drain -to-Source Voltage(V) VGS=5.5 V 5 1 01 52 0 0.028 0.033 0.038 0.043 0.048 0.053 V GS =-4.5V V GS =-6V R DS(ON) -Resistance( DS -Drain to Source Current(A) V GS =-10V -50 0 50 100 150 0.6 0.8 1.0 1.2 1.4 1.6 RDS (ON) -On-Resistance Normalized Temperature ( o V GS =-10V I D =-4.4A 0123 V GS =-10V V GS =-6V V GS =-4.5V V GS =-4V DS -Drain to Source Current (A) DS -Drain to Source Voltage (V) V GS =-3V T=-50 o C T=0 o C T=150 o C V DS =-5V DS -Drain to Source Current (A) GS -Gate to Source Voltage(V) -50 0 50 100 150 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Gate Threshold Voltage Normalized Temperature ( o I D =-250uA 2468 1 0 0.00 0.04 0.08 0.12 0.16 0.20 R DS(ON) -Resistance ( GS -Gate to Source Voltage(V) I D =-4.4A Will Semiconductor Ltd. 4 Jul,2018 Rev.1.2

G a t e C h a r g e C h a r a c t e r i s t i c s Body diode forward voltage Safe operating power T=25 o C T=-50 o C T=150 o C SD -Source to Drain Current (A) SD -Source to Drain Voltage (V) 0 5 10 15 20 GS -Gate to Source Voltage (V) Q g (nC) V DS =-15V I D =-5A 0 5 10 15 20 25 200 400 600 800 1000 1200 1400 DS -Drain to Source Voltage (V) Capacitance (pF) Crss Coss Ciss F=1MHz 1E-4 1E-3 0.01 0.1 1 10 100 1000 Pulse width (S) Power (W) T J(MAX) =150 o C T A =25 o C Will Semiconductor Ltd. 5 Jul,2018 Rev.1.2 0.1 1 10 100 0.01 0.1 100 10s DC Limit by Rdson T A =25 o C Single Pulse BVDSS Limit DS -Drain to Source Voltage(V) GS >minimum V GS at which R DS(ON) is specified D -Drain Current (A) 100us 1ms 10ms 100ms

Transient thermal response (Junction-to-Ambient) Transient thermal response (Junction-to-Ambient) 1 10 100010 100 0.2 0.1 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 t t Notes: P DM 1. Duty Cycle, D = 2. Per Unit Base = R thJA =7 W 3. T JM A DM Z thJA(t) t t 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 5 ° C / Will Semiconductor Ltd. 6 Jul,2018 Rev.1.2

Package outline dimensions SOP-8L Dimensions in millimeter Symbol Min. Typ. Max. A 1.350 1.550 1.750 A1 0.100 0.175 0.250 A2 1.350 1.450 1.550 b 0.330 0.420 0.510 c 0.170 0.210 0.250 D 4.700 4.900 5.100 E 3.800 3.900 4.000 E1 5.800 6.000 6.200 e 1.270(BSC) L 0.400 0.835 1.270 © 0e 8e Will Semiconductor Ltd. 7 Jul,2018 Rev.1.2