WPM9435 WILLSEMI | Alldatasheet
Document overview
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Technical content
Features
z -30V/-5A,RDS(ON)= 36m@VGS=- 10V z -30V/-4A,RDS(ON)= 53m@VGS=-4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z SOP – 8P package design Application z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch = Date Code = Specific Device Code DDDD GSSS WPM9435 YYWW YYWW WPM9435 www.willsemi.com Page 1 0 2018 Rev 1.5Jul,
http://www.willsemi.com PIN DESCRIPTION Pin Symbol Description
1 S Source
2 S Source
3 S Source
4 G Gate
5 D Drain
6 D Drain
7 D Drain
8 D Drain
(TA=25 unless otherwise specified) 3DUDPHWHU 6\\PERO 9DOXH 8QLWV V DS Drain-Source voltage -30 V V GS Gate-Source V oltage ±20 V I D Continuous Drain Current Steady-State TA=25 ć -5.5 Steady-State TA=70 ć -4.4 I DM Pulse Drain Current -25 A P D Power Dissipation TA=25 ć 2.0 W TA=70ć 1.2 T J Operating Junction Temperature Range -55~150 ć Tstg Storage Temperature Range R șJA ć/W
Electrical Characteristics
A =25 Unlesк s otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS V GS =0V ,I D =-250uA -30 Gate Threshold V oltage V GS(th) V DS GS D =-250uA -3.0 V Gate Leakage Current I GSS V DS =0V ,V GS =±20V ±100 nA V DS =-24V,V GS =0V -1 Zero Gate V oltage Drain Current I DSS V DS =-24V,V GS =0V T J =85к - 10 uA On-State Drain Current I D(on) V DS = -5V ,V GS =-4.5V -10 A V GS =-10V ,I D =-5.0A Drain-Source On-Resistance R DS(on) V GS =-4.5V ,I D =-4.0A ȍ Forward Transconductance gfs V DS =- 5V ,I D =-5A 8 S Diode Forward V oltage V SD I S =-1.3A,V GS =0V -0.79 -1.5 V -1.0 -2.0 Page 2 0.036 0.046 0.053 0.066 0 2018 Rev 1.5Jul, Thermal Resistance-Junction to Ambient 62.5 A
http://www.willsemi.com Typical Performance Characteristis Dynamic Total Gate Charge Q g 10 18 Gate-Source Charge Q gs 1.6 Gate-Drain Charge Q gd V DS =-15V ,V GS =-10V I D = -3.5A 3.0 nC Input Capacitance C iss 710 Output Capacitance C oss 115 Reverse Transfer Capacitance C rss V DS =-15V ,V GS =0V f=1MHz 100 pF t d(on) 8 18 Turn-On Time t r 8 18 t d(off) 25 50 Turn-Off Time t f V DD =-15V ,R L =15ȍ I D Ł-1.0A,V GEN =-10V R G =6ȍ 25 35 nS 012345 I D ,Drain Current(A) V GS =10V V GS =6V V GS =4V V GS =3V V DS ,Drain-Source voltage(V) Drain Current VS Drain-Source voltage Drain Current vs ON Resistance Page 3 0 5 10 15 20 V GS =4.5V V GS =10V V GS =6V I D , Drain Current(A) R DS(ON) ON Resistance(mOhm) 150 120 0 2018 Rev 1.5Jul,
http://www.willsemi.com 0.8 1.2 1.4 1.6 0 25 50 75 100 125 150 175 Temperature (°C) On-Resistance vs. Junction Normalized On-Resistance V GS =-10V V GS =-4.5V I D =-5A Gate-Source Voltage vs ON Resistance 0123456 V GS ,Gate-Source Voltage(V) V DS =2V I D ,Drain Current(A) Drain Current VS Gate-Source Voltage 0.0 0.3 0.6 0.9 1.2 1.5 IS, Source-Drain Current(A) V DS ,Drain-Source voltage(V) Drain Current VS Source-Drain Current Page 4 02468 1 0 0.04 0.08 0.12 0.16 0.20 I D =-3A R DS(ON) ON Resistance(Ohm) V GS ,Gate-Source Voltage(V) 0 2018 Rev 1.5Jul,
http://www.willsemi.com THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN G OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 02468 1 0 1 2 1 4 1 6 g (nC) Gate-Charge Characteristics GS (Volts) 200 400 600 800 1000 1200 0 5 10 15 20 25 30 DS (Volts) Capacitance Characteristics Capacitance (pF) C iss C oss C rss 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Single Pulse Power Rating Junction-to- Ambient (Note E) Power (W) 0.01 0.1 Pulse Width (s) Normalized Maximum Transient Thermal Impedance Z TJA Normalized Transient Thermal Resistance 0.1 100 0.1 1 10 100 DS (Volts) D (Amps) Maximum Forward Biased Safe Operating Area (Note E) 100 P s 10ms 1ms 0.1s DC R DS(ON) limited T J(Max) =150°C T A =25°C V DS =-15V I D =-6A Single Pulse D=T on T J,PK A DM TJA TJA R TJA =40°C/W T on T P D In descending order T J(Max) =150°C T A =25°C 10Ps Page 5 0 2018 Rev 1.5Jul,
http://www.willsemi.com Packaging Information Page 6 0 2018 Rev 1.5Jul,