WPM6205

WPM6205 WILLSEMI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

Features

 Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage  Small package SOT-23-3L

Applications

 DC/DC converters Power supply converters circuit Load/Power Switching for portable device Http://www.sh-willsemi.com SOT-23-3L Pin configuration (Top view) PA = Device Code Y= Y e a r W= W e e k ( A ~ z ) Marking Order information Device Package Shipping WPM6205-3/TR SOT-23-3L 3000/Tape&Reel V DS (V) Typical R DS(on) (mΩ) -20 33@ V GS =-4.5V 44@ V GS =-2.5V 65@ V GS =-1.8V D GS

Will Semiconductor Ltd. 2 Aug.2016- Rev.1.1 Absolute Maximum ratings Thermal resistance ratings a. Surface mounted on FR4 Board using 1 in sq pad size, 1oz Cu. b. Surface mounted on FR4 board using the minimum recommended pad size, 1oz Cu. c. Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%. d. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V DS -20 VGate-Source Voltage V GS ±12 Continuous Drain Current ad T A =25°C I D -4.8 -4.1 AT A =70°C -3.8 -3.3 Maximum Power Dissipation ad T A =25°C P D 1.5 1.1 WT A =70°C 0.9 0.7 Continuous Drain Current bd T A =25°C I D -4.2 -3.8 AT A =70°C -3.4 -3.0 Maximum Power Dissipation bd T A =25°C P D 1.1 0.9 WT A =70°C 0.7 0.6 Pulsed Drain Current c I DM -20 A Operating Junction Temperature T J - 5 5t o1 5 0 Lead Temperature T L 260 Storage Temperature Range T stg - 5 5t o1 5 0 Single Operation Parameter Symbol Typical Maximum Unit Junction-to-Ambient Thermal Resistance a t ≤ 10 s R θJA 70 85 °C/W Steady State 90 115 Junction-to-Ambient Thermal Resistance b t ≤ 10 s R θJA 95 110 Steady State 110 135 Junction-to-Case Thermal Resistance Steady State R θJC 40 60

Will Semiconductor Ltd. 3 Aug.2016- Rev.1.1 Electronics Characteristics (Ta=25 o C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BV DSS V GS =0V ,I D = -250uA -20 V Zero Gate Voltage Drain Current I DSS V DS =-16V, V GS =0 V - 1 u A Gate-to-source Leakage Current I GSS V DS =0V ,V GS =± 1 2 V ± 1 0 0 n A ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V GS DS D Drain-to-source On-resistance R DS(on) V GS =- 4 . 5 V ,I D = -4.9A 33 43 mΩV GS =-2.5V,I D = -3.1A 44 58 V GS =-1.8V, I D = -2.0A 65 88 Forward Transconductance g FS V DS =- 5V ,I D =- 3 . 0 A 4 9 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C ISS V GS = 0 V, f = 1.0MHz, V DS -10 V 1251 pFOutput Capacitance C OSS 145 Reverse Transfer Capacitance C RSS 124 Total Gate Charge Q G(TOT) V GS =- 4 . 5V ,V DS =- 1 0V , I D =-5.0 A nC Threshold Gate Charge Q G(TH) 0.85 Gate-to-Source Charge Q GS 2.5 Gate-to-Drain Charge Q GD 2.8 SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) V GS =- 1 0V ,V DS =-15 V, I D =-5A, R G =6Ω 7.8 ns Rise Time tr 6.4 Turn-Off Delay Time td(OFF) 80 Fall Time tf 18 BODY DIODE CHARACTERISTICS Forward Voltage V SD V GS =0V ,I S

Will Semiconductor Ltd. 4 Aug.2016- Rev.1.1 Typical Characteristics (Ta=25 o C, unless otherwise noted) Output characteristics On-Resistance vs. Drain current On-Resistance vs. Junction temperature Transfer characteristics On-Resistance vs. Gate-to-source voltage Threshold voltage vs. Temperature 051 01 52 0 V GS =10V V GS =8V VGS=6V I DS-Drai n-to-Source Cu rrent (A) V DS-Drain -to-Source Voltage(V) VGS=5.5 V -50 0 50 100 150 0.6 0.9 1.2 1.5 RDS (ON) -On-Resistance Normalized Temperature ( o V GS =-4.5V I D =-5A -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 Gate Threshold Voltage Normalized Temperature ( o I D =-250uA 4 8 12 16 20 0.02 0.03 0.04 0.05 0.06 0.07 V GS =-4.5V V GS =-6V V GS =-3.5V V GS =-2.5V R DS(ON) -On Resistance( DS -Drain to Source Current(A) 23456 0.00 0.04 0.08 0.12 0.16 0.20 R DS(ON) -On-Resistance( GS -Gate to Source Voltage (V) I D =-5A 0123 V GS =-6V V GS =-4.5V V GS =-3.5V DS -Drain to Source Current(A) DS -Drain to Source Voltage(V) V GS =-2.5V o C -50 o C DS -Drain Source Current(A) GS -Gate to Source Voltage(V) 150 o C V DS =-5V

Will Semiconductor Ltd. 5 Aug.2016- Rev.1.1 Capacitance Single pulse power Body diode forward voltage Safe operating power T=150 o C T=25 o C SD -Source to Drain Current (A) SD -Source to Drain Voltage (V) 0 3 6 9 12 15 0.0 1.5 3.0 4.5 Q g (nC) GS -Gate to Source Voltage (V) V DS =-10V I D =-5A Gate Charge Characteristics 1E-4 1E-3 0.01 0.1 1 10 100 100 Power (W) T J(MAX) =150 o C T A =25 o C Pulse width (S) 0.1 1 10 100 0.01 0.1 100 D -Drain Current (A) Limit by Rdson DS -Drain to Source Voltage(V) GS >minimum V GS at which R DS(ON) is specified 10s DC T A =25 o C Single Pulse 100ms 10ms 1ms 0 3 6 9 12 15 500 1000 1500 2000 Capacitance (pF) -VDS-Drain to Source Voltage (V) Ciss F = 1MHZ Coss Crss

Will Semiconductor Ltd. 6 Aug.2016- Rev.1.1 Transient thermal response (Junction-to-Ambient) 1 10 60010 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 115 °C/W 3. T JM - T A = P DM Z thJA(t) t t t t Notes: 4. Surface Mounted P DM

Will Semiconductor Ltd. 7 Aug.2016- Rev.1.1 Package outline dimensions SOT-23-3L