WPM5001

WPM5001 WILLSEMI | Alldatasheet

Document overview

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• PDF pages: 8

Technical content

Features

 Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package SOT-23

Applications

 Driver for Relay, Solenoid, Motor, LED etc.  DC-DC converter circuit  Power Switch  Load Switch  Charging Http//:www.sh-willsemi.com SOT-23 Pin configuration (Top view) W=Willsemi 01= Device Code *= Month (A~Z) Marking Order information Device Package Shipping WPM5001-3/TR SOT-23 3000/Reel&Tape VDS (V) Typical Rds(on) (Ω) -50 3.0@ VGS= –10V rotected 3.5@ VGS= –5V -free. Halogen free and ESD P Will Semiconductor Ltd. 1 Mar,2018 – Rev. 1.3

-50 V Gate-Source Voltage VGS Continuous Drain Current a d TA=25°C ID -0.2 -0.18 A TA=70°C -0.16 -0.14 Maximum Power Dissipation a d TA=25°C PD 0.4 0.37 WTA=70°C 0.29 0.23 Continuous Drain Current b TA=25°C ID -0.19 -0.17 A Maximum Power Dissipation b TA=25°C P D 0.4 0.3 WTA=70°C 0.26 0.22 Pulsed Drain Current c IDM -0.8 A Operating Junction Temperature T J -55 to 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistanceratings Parameter Symbol Typical Maximum Unit Junction-to-Ambient Thermal Resistance a t ≤ 10 s RθJA 240 270 Steady State 280 335 Junction-to-Ambient Thermal Resistance b t ≤ 10 s RθJA 270 300 °C/W Steady State 300 350 Junction-to-Case Thermal Resistance Steady State RθJC 130 180 a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width<380µs, Duty Cycle<2% d Maximum junction temperature TJ=150°C. Will Semiconductor Ltd. 2 Mar,2018 – Rev. 1.3

Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = -250uA - V Zero Gate Voltage Drain Current IDSS VDS = -50V, VGS = 0V -1 uA Gate-to-source Leakage Current IGSS VDS = 0 V, VGS =±20V ±5 uA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250uA -0.8 -1.5 -2.0 V Drain-to-source On-resistance b, c RDS(on) VGS = -10V, ID = -0.4A 3.0 8 Ω VGS = -5V, ID = -0.3A 3.5 10 Forward Trans conductance gfs VDS = -25V, ID = -0.4A 0.4 S CAPACITANCES, CHARGES Input Capacitance CISS VGS = 0 V, f = 1.0 MHz, VDS = -10 V 66.7 pF Output Capacitance COSS 27.4 Reverse Transfer Capacitance CRSS 17.8 Total Gate Charge QG(TOT) VGS = -10V, VDD = -25 V, ID = -0.4A 0.89 nC Gate-to-Source Charge QGS 0.16 Gate-to-Drain Charge QGD 0.57 SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) VGS = -10 V, VDD = -10 V, ID=0.4A, RG=6 Ω 7.4 ns Rise Time tr 4.2 Turn-Off Delay Time td(OFF) 11.6 Fall Time tf 9.0 BODY DIODE CHARACTERISTICS Forward Voltage VSD VGS = 0 V, IS = -0.25A -0.9 -1.5 V Will Semiconductor Ltd. 3 Mar,2018 – Rev. 1.3

0.0 0.2 0.4 0.6 0.8 1.0 V GS =-4V V GS =-10V V GS =-5V V GS =-2.5V -ID - Drain to Source Current (A) -VDS - Drain to Source Voltage (V) VGS=-10V VGS=-5V -IDS-Drain-to-Source Current(A) 2 4 6 8 10 ID=-0.4A RDS(on) VGS-Gate to Source Voltage(V) -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VGS=-10V ID=-0.4A Normalized On-Resistance Temperature( o -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 Normalized Gate Threshold Voltage Temperature( o I D =-250uA 0 1 2 3 4 0.0 0.1 0.2 0.3 0.4 0.5 V DS =-5V TA=125 o C TA=25 o C TA=-50 o C -ID - Drain to Source Current (A) -VGS - Gate to Source Voltage (V) Typical Characteristics (Ta=25 o C, unless otherwise noted) Output c haracteristics On R esistance vs. D rain c urrent On Resistance vs. Junction temperature Transfer c haracteristics On Resistance vs. Gate to Source voltage Threshold volta ge vs. Temperature - On-Resistance( ) Ω RDS(on)- On-Resistance( ) Ω Will Semiconductor Ltd. 4 Mar,2018 – Rev. 1.3

f = 1 MHz V GS = 0 V Crss Ciss Coss Capacitance(pF) -VDS- Drain to Source Voltage(V) 0.1 0.2 0.3 0.4 0.5 TA=150 o C TA=25 o C -ISD-Source to Drain Current (A) -VSD- Source to Drain Voltage (V) 0.1 1 10 100 1E-3 0.01 0.1 1ms 10ms 100ms 10s DC Limit by R dson Bvdss Limit -ID- Drain Current (A) -VDS- Drain Source Voltage (V) * VGS> minimum VGS at which RDS(on) is specified T A =25 C Single Pulse 1E-4 1E-3 0.01 0.1 1 10 100 1000 Power (W) Pulse width (S) T J(Max) =150 C TA=25 C -VGS-Gate Voltage (V) Qg(nC) V GS = -10 V V DS = -25 V I D = -0.4 A Capacitance Single pulse power Body diode forward voltage Safe operating power Gate charge Characteristics Will Semiconductor Ltd. 5 Mar,2018 – Rev. 1.3

1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 1E-4 1E-3 0.01 0.1 0.5 0.2 0.1 0.05 0.02 0.01 Normalized Effective Transient Thermal Impedance Square Wave Pulse Duration (sec) Single pulse Transient thermal response (Junction-to-Ambient) PDM 1. Duty Cycle, D=t1/t2 2. Per Unit Base =RθJA= 280°C/W 3. TJM-TA = PDM RθJA 4. Surface Mounted Will Semiconductor Ltd. 6 Mar,2018 – Rev. 1.3

Package outline dimensions SOT-23 Will Semiconductor Ltd. 7 D E e TOP VIEW b c SIDE VIEW SIDE VIEW A Symbol Dimensions in Millimeters Min. Typ. Max. A 0.89 1.10 1.30 A1 0.00 - 0.10 b 0.30 0.43 0.55 c 0.05 - 0.20 D 2.70 2.90 3.10 E 1.15 1.33 1.50 E1 2.10 2.40 2.70 e 0.95 Typ. e1 1.70 1.90 2.10 Mar,2018 – Rev. 1.3

Will Semiconductor Ltd. 8 TAPE AND REEL INFORMATION Reel Dimensions Tape Dimensions R e e l D i m e n s i o n s RD W Quadrant Assignments For PIN1 Orientation In Tape RD Reel Dimension W Overall width of the carrier tape 1 P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant User Direction of Feed Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 7inch 13inch 2mm 8mm 4mm 8mm 12mm 16mm Mar,2018 – Rev. 1.3