WPM4803 WILLSEMI | Alldatasheet
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z z z z z Application z z z z z z z http://www.willsemi.com Page 1 (Top View) www.willsemi.com PIN CONNECTIONS WPM4803 P-Channel Enhancement Mode MOSFET The WPM4 803 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . -30V/-5A,R DS(ON) = 36mȍ@V GS =- 10V -30V/-4A,R DS(ON) = 53\\\\\\mȍ@V GS =- 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter G1 D1 S1 D1 S2 D2 Order information 3DUW1XPEHU 3DUW1XPEHU 6KLSSLQJ WPM4803-8/TR SOP-8P 4000/Tape&Reel Marking Diagram and explain = Date Code = Specific Device Code WPM4803 YYWW YYWW WPM4803 0 20188 Rev 2.6Jul,
http://www.willsemi.com Page 2 Pin Assignment Pin Symbol Description
1 S1 Source 1
2 G1 Gate 1
3 S2 Source 2
4 G2 Gate 2
5 D2 Drain 2
6 D2 Drain 2
7 D1 Drain 1
8 D1 Drain 1
A =25 Unless otherwise noted)к Parameter Symbol Typical Unit Drain-Source V oltage V DSS -30 V Gate –Source V oltage V GSS ±20 V T A =25к -5.5 Continuous Drain Current(T J =150 )к T A =70к I D -4.4 A Pulsed Drain Current I DM -20 A Continuous Source Current(Diode Conduction) I S -2.3 A T A =25к 2.0 Power Dissipation T A =70к P D 1.2 W Operating Junction Temperature T J -55/150 к Storage Temperature Range T STG -55/150 к Thermal Resistance-Junction to Ambient R șJA 62.5 к/W 0 2018 Rev 2.6Jul,
Typical Performance Characteristis http://www.willsemi.com Page 3 A =25 Unless otherwise noted)к Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS V GS =0V ,I D =-250uA -30 Gate Threshold V oltage V GS(th) V DS GS D =-250uA -1.0 -3.0 V Gate Leakage Current I GSS V DS =0V ,V GS =±20V ±100 nA V DS =-24V ,V GS =0V -1 Zero Gate V oltage Drain Current I DSS V DS =-24V ,V GS =0V T J =85к -5 uA On-State Drain Current I D(on) V DS = -5V ,V GS V GS =-10V ,I D ȍ Drain-Source On-Resistance R DS(on) V GS =-4.5V ,I D Forward Transconductance gfs V DS =-5 D =-5.0A Diode Forward V oltage V SD I S =-1.0A,V GS Total Gate Charge Q g 15 25 Gate-Source Charge Q gs Gate-Drain Charge Q gd V DS =-15V ,V GS =-10V I D = -5.0A nC Input Capacitance C iss Output Capacitance C oss 120 Reverse Transfer Capacitance C rss V DS =-15V ,V GS =0V f=1MHz pF t d(on) 7 15 Turn-On Time t r 10 20 t d(off) 40 80 Turn-Off Time t f V DD =-15V ,R L =15ȍ I D Ł-1.0A,V GEN =-10V R G =6ȍ 20 40 nS Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS V GS =0V ,I D =-250uA -30 Gate Threshold V oltage V GS(th) V DS GS D V Gate Leakage Current I GSS V DS =0V ,V GS =±20V ±100 nA V DS =-24V ,V GS =0V -1 Zero Gate V oltage Drain Current I DSS V DS =-24V ,V GS =0V T J =85к -5 uA On-State Drain Current I D(on) V DS = -5V ,V GS V GS =-10V ,I D ȍ Drain-Source On-Resistance R DS(on) V GS =-4.5V ,I D Forward Transconductance gfs V DS Diode Forward V oltage V SD I SG S Dynamic Total Gate Charge Q g 15 25 Gate-Source Charge Q gs Gate-Drain Charge Q gd V DS =-15V ,V GS =-10V I D = -5.0A nC Input Capacitance C iss 680 Output Capacitance C oss 120 Reverse Transfer Capacitance C rss V DS =-15V ,V GS =0V f=1MHz pF t d(on) 7 15 Turn-On Time t r 10 20 t d(off) 40 80 Turn-Off Time t f V DD =-15V ,R L =15ȍ I D Ł-1.0A,V GEN =-10V R G =6ȍ 20 40 nS 3.8 =-10V -20 A A 0.0 36 0.0 46 =-4.0A 0.053 0.066
8 S 5
=0V -0.79 - V 1.5 -1 .9 =-250uA -1.0 =-5.0 V, I -0.5 0 2018 Rev 2.6Jul,
http://www.willsemi.com Page 4 Typical Characteristis 012345 V GS =4.5V V GS =4V V GS =10V V GS =5V V GS =3V V GS =6V I D ,Drain Current(A) Drain Current VS Drain-Source voltage V DS ,Drain-Source voltage(V) 468 1 0 R DSON Resistance VS Gate-Source Voltage R DSON Resistance(mohm) V GS Gate-Source Voltage I D =5.7A,T=25 O C 0 . 20 . 40 . 60 . 8 0.0 0.5 1.0 1.5 2.0 T=25 O C Source Current VS Source to Drain Voltage I S Source Current(A) V SD Source to Drain Voltage 012345 V GS ,Gate-Source Voltage(V) I D ,Drain Current(A) Drain Current VS Gate-Source Voltage V DS =4V 0 2018 Rev 2.6Jul,
http://www.willsemi.com Page 5 -40 0 40 80 120 160 -0.2 0.0 0.2 0.4 V GS ,Variance vs Temperature V GS ,Variance(v) T J Temperature( o I D =250(uA),V GS DS -40 0 40 80 120 160 R DSON Resistance VS T J Temperature R DSON Resistance(mohm) T J Temperature( o V GS =10V I D =5.7A 0 1 02 03 04 05 0 0.0 0.1 0.2 0.3 V GS =10V V GS =6.0V V GS =4.5V R DSON Resistance VS I D ,Drain Current R DSON Resistance(ohm) I D ,Drain Current(A) Typical Characteristis 0 2018 Rev 2.6Jul,
http://www.willsemi.com Page 6 Typical Characteristis 0 2018 Rev 2.6Jul,
http://www.willsemi.com Page 7 Packaging Information 0 20188 Rev 2.6Jul,