WPM3407 WILLSEMI | Alldatasheet

Document overview

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Technical content

Features

z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch V (BR)DSS R DS(on) Typ −30 V 36 mΩ @ −10 V 53 mΩ @ −4.5 V Part Number Package Shipping WPM3407-3/TR SOT23-3 3000Tape&Reel pin connections : SOT 23-3 PïChannel WP7 1 2 Gate Source Drain G S D Top View - - Http://www.sh-willsemi.com W = Willsemi P 7 = D e v i c e C o d e = Year&Month

Will Semiconductor Ltd. 2 Aug,2018- Rev.1.4 a. Surface Mounted on FR4 Board using 1 in sq pad size, 1oz Cu.

Electrical Characteristics

J =2 5°C unless otherwise noted) THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Junction-to-Ambient Thermal Resistance a t ≤ 10 s R θJA 70 90 °C/WSteady State 90 125 Junction-to-Case Thermal Resistance Steady State R θJC 50 80 Parameter Symbol Test Condition Min Typ Max Unit Static Parameters Drain-Source Breakdown Voltage BV DSS V GS =0V ,I D = -250 µA -30 V Zero Gate Voltage Drain Current I DSS V DS GS =0V T J =2 5 ° C - 1 µA T J =8 5 ° C - 1 0 Gate-Source Leakage Current I GSS V DS =0V ,V GS =± 2 0V ± 1 0 0 n A Gate Threshold Voltage V GS(th) V GS DS D Drain-source On-Resistance R DS(on) V GS = -10V, I D mΩ V GS =- 4 . 5 ,I D Forward Recovery Voltage V SD V GS =0V ,I S =-1.0A Forward Transconductance g FS V DS =- 5 . 0V ,I D =- 5A 5 8 S Dynamic Input Capacitance C iss V GS =0V ,f=1 . 0M H z ,V DS =- 1 5V 700 950 1200 pFOutput Capacitance C oss 90 120 150 Reverse Transfer Capacitance C rss 75 100 125 Total Gate Charge Q g(tot) V GS =- 1 0V ,V DS =- 1 5V ,I D =5A 13 18 23 nC Threshold Gate Charge Q g(th) 1.5 2 2.5 Gate- Source Charge Q gs 22 . 53 Gate- Drain Charge Q gd 33 . 8 4 . 5 Gate Resistance R g V GS =0V ,V DS =0V ,f=1 . 0M H z 5 8 Ω Switching Parameters Turn-On Delay Time t d(on) V GS =- 1 0V ,V DS =- 1 5V , I D =-4.3A, R G =6 Ω 81 1 1 5 ns Rise Time t r 469 Turn-Off Delay Time t d(off) 30 40 50 Fall Time t f 7.5 10 Body Diode Reverse Recovery Time t rr I F =-5A, dI/dt=100A/µs 25 ns Body Diode Reverse Recovery Charge Q rr I F =-5A, dI/dt=100A/µs 14 nC =24V,V =-3.0A 53 66 =-4.4A 36 46 -0.79 -1.5-0.5 V

Will Semiconductor Ltd. 3 Aug,2018- Rev.1.4 Typical Performance Characteristis 012345 I D ,Drain Current(A) V GS =10V V GS =6V V GS =4V V GS =3V V DS ,Drain-Source voltage(V) Drain Current VS Drain-Source voltage 0 5 10 15 20 V GS =4.5V V GS =10V V GS =6V I D , Drain Current(A) Drain Current vs ON Resistance R DS(ON) ON Resistance(mOhm) 02468 1 0 0.04 0.08 0.12 0.16 0.20 I D =-3A Gate-Source Voltage vs ON Resistance R DS(ON) ON Resistance(Ohm) V GS ,Gate-Source Voltage(V) 0123456 V GS ,Gate-Source Voltage(V) V DS =-2V I D ,Drain Current(A) Drain Current VS Gate-Source Voltage 0.8 1.2 1.4 1.6 0 25 50 75 100 125 150 175 Temperature (°C) On-Resistance vs. Junction Normalized On-Resistance V GS =-10V V GS =-4.5V I D =-3A 150 120

Will Semiconductor Ltd. 4 Aug,2018- Rev.1.4 02468 1 0 1 2 1 4 1 6 g (nC) Gate-Charge Characteristics GS (Volts) 200 400 600 800 1000 1200 0 5 10 15 20 25 30 DS (Volts) Capacitance Characteristics Capacitance (pF) C iss C oss C rss 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Single Pulse Power Rating Junction-to- Ambient (Note E) Power (W) 0.1 100 0.1 1 10 100 DS (Volts) D (Amps) Maximum Forward Biased Safe Operating Area (Note E) 100 P s 10ms 1ms 0.1s DC R DS(ON) limited T J(Max) =150°C T A =25°C V DS =-15V I D =-6A T J(Max) =150°C T A =25°C 10Ps 0.01 0.1 Pulse Width (s) Normalized Maximum Transient Thermal Impedance Z TJA Normalized Transient Thermal Resistance Single Pulse D=T on T J,PK A DM TJA TJA R TJA =40°C/W T on T P D In descending order

Will Semiconductor Ltd. 5 Aug,2018- Rev.1.4 Avalanche Energy (Single pulsed) Test Circuit & Waveforms E AS =1/2 L*I AR

Will Semiconductor Ltd. 6 Aug,2018- Rev.1.4 Power Dissipation Characteristics 1 .T h ep a c k a g eo fW P M 3 4 0 7i sS O T 2 3 - 3 ,s u r f a c em o u n t e do nF R 4B o a r du s i n g1i ns qp a ds i z e， 1o zC u，R θJA is 125℃/W. 2. The power dissipation P D i sb a s e do nT J(MAX) =150°C, and the relation between T J and P D is T J a θJA D ,t h e maximum power dissipation is determined by R θJA 3. The R θJA is the thermal impedance from junction to ambient, using larger PCB pad size can get smaller R θJA and result in larger maximum power dissipation. 125 ℃/W when mounted on a1i n pad of 1 oz copper.

Will Semiconductor Ltd. 7 Aug,2018- Rev.1.4 Package outline dimensions SOT-23-3L D E e TOP VIEW b c SIDE VIEW SIDE VIEW A Symbol Dimensions in Millimeters Min. Typ. Max. A - - 1.25 A1 0.00 - 0.15 b 0.30 0.40 0.50 c 0.10 - 0.20 D 2.82 2.92 3.03 E1 2.60 2.80 3.00 E 1.50 1.62 1.73 e 0.95 BSC e1 1.80 1.90 2.00

Will Semiconductor Ltd. 8 Aug,2018- Rev.1.4 TAPE AND REEL INFORMATION Reel Dimensions Tape Dimensions Quadrant Assignments For PIN1 Orientation In Tape RD Reel Dimension W Overall width of the carrier tape 1 P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant User Direction of Feed RD W Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 7inch 13inch 2mm 4mm 8mm 8mm 12mm 16mm