WPM3024 WILLSEMI | Alldatasheet

Document overview

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Technical content

Features

 Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage  Small package SOT-23-3L

Applications

 DC/DC converters Power supply converters circuit Load/Power Switching for portable device Http://www.sh-willsemi.com SOT-23-3L Pin configuration (Top view) PE = Device Code Y = Y e a r W = W e e k ( A ~ z ) Marking Order information Device Package Shipping WPM3024-3/TR SOT-23-3L 3000/Tape&Reel V DS (V) Typical R DS(on) (mΩ) -30 43 @ V GS =-10V 48 @ V GS =-4.5V D GS Will Semiconductor Ltd. 1 2017/05/04- Rev.1.0

Thermal resistance ratings a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Repetitive rating, pulse width limited by junction temperature, t p =10µs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature T J =150°C. Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±12 Continuous Drain Current a d T A =25°C I D -4.4 -3.7 A T A =70°C -3.5 -3.0 Maximum Power Dissipation a d T A =25°C P D 1.4 1.0 W T A =70°C 0.9 0.6 Continuous Drain Current b d T A =25°C I D -3.9 -3.5 A T A =70°C -3.1 -2.8 Maximum Power Dissipation b d T A =25°C P D 1.1 0.9 W T A =70°C 0.7 0.6 Pulsed Drain Current c I DM -25 A Operating Junction Temperature T J -55 to 150 Lead Temperature T L 260 Storage Temperature Range T stg -55 to 150 Single Operation Parameter Symbol Typical Maximum Unit Junction-to-Ambient Thermal Resistance a t ≤ 10 s R θJA 70 90 °C/W Steady State 90 125 Junction-to-Ambient Thermal Resistance b t ≤ 10 s R θJA 89 115 Steady State 115 140 Junction-to-Case Thermal Resistance Steady State R θJC 40 60 Will Semiconductor Ltd. 2 2017/05/04- Rev.1.0

Electronics Characteristics (Ta=25 o C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BV DSS V GS = 0 V, I D = -250uA -30 V Zero Gate Voltage Drain Current I DSS V DS =-24V, V GS = 0V -1 uA Gate-to-source Leakage Current I GSS V DS = 0 V, V GS = ±12V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V GS = V DS , I D Drain-to-source On-resistance R DS(on) V GS =-10V, I D = -4.0A 43 52 mΩ V GS = -4.5V, I D = -3.0A 48 65 Forward Transconductance g FS V DS = -5 V, I D = -4.0A 6 16 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C ISS V GS = 0 V, f = 1.0MHz, V DS -15 V 1815 pF Output Capacitance C OSS 156 Reverse Transfer Capacitance C RSS 115 Total Gate Charge Q G(TOT) V GS = -10 V, V DS = -10 V, I D =-3.0 A nC Threshold Gate Charge Q G(TH) 1.1 Gate-to-Source Charge Q GS 2.2 Gate-to-Drain Charge Q GD 2.0 SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) V GS = -10 V, V DS =-15 V, I D =-2A, R G =6Ω ns Rise Time tr 4.4 Turn-Off Delay Time td(OFF) 78.8 Fall Time tf 6 BODY DIODE CHARACTERISTICS Forward Voltage V SD V GS = 0 V, I S = -1A -0.8 -1.5 V Will Semiconductor Ltd. 3 2017/05/04- Rev.1.0

(Ta=25 o C, unless otherwise noted) Output characteristics On-Resistance vs. Drain current On-Resistance vs. Junction temperature Transfer characteristics On-Resistance vs. Gate-to-source voltage Threshold voltage vs. Temperature 051 01 52 0 V GS =10V V GS =8V VGS=6V I DS-Drai n-to-Source Cu rrent (A) V DS-Drain -to-Source Voltage(V) VGS=5.5 V 0123 DS -Drain to Source Voltage(V) DS -Drain to Source Current(A) V GS =-10V V GS =-4.5V V GS =-3.5V V GS =-2.5V V DS =-5V GS -Gate to Source Voltage(V) DS -Drain Source Current(A) o C -50 o C 150 o C 4 8 12 16 20 0.03 0.04 0.05 0.06 0.07 0.08 DS -Drain to Source Current(A) R DS(ON) -On Resistance( V GS =-3.5V V GS =-10V V GS =-4.5V V GS =-2.5V 2468 1 0 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 GS -Gate to Source Voltage (V) R DS(ON) -On-Resistance( I D =-4.0A -50 0 50 100 150 0.6 0.8 1.0 1.2 1.4 1.6 V GS =-10V I D =-3.3A Temperature ( o RDS (ON) -On-Resistance Normalized -50 0 50 100 150 0.6 0.7 0.8 0.9 1.0 1.1 1.2 I D =-250uA Temperature ( o Gate Threshold Voltage Normalized Will Semiconductor Ltd. 4 2017/05/04- Rev.1.0

G a t e C h a r g e C h a r a c t e r i s t i c s Body diode forward voltage Safe operating power 1E-4 1E-3 0.01 0.1 1 10 100 1000 100 Pulse width (S) Power (W) T J(MAX) =150 o C T A =25 o C SD -Source to Drain Voltage (V) SD -Source to Drain Current (A) T=150 o C T=25 o C 0369 1 2 1 5 500 1000 1500 2000 2500 Capacitance (pF) DS -Drain to Source Voltage (V) Coss Crss Ciss F=1MHz 0 5 10 15 20 25 30 V DS =-10V I D =-3.0A Q g (nC) GS -Gate to Source Voltage (V) 0.1 1 10 100 0.01 0.1 100 DC 10s 100us Limit by Rdson T A =25 o C Single Pulse BVDSS Limit DS -Drain to Source Voltage(V) GS >minimum V GS at which R DS(ON) is specified D -Drain Current (A) 1ms 10ms 100ms Will Semiconductor Ltd. 5 2017/05/04- Rev.1.0

Transient thermal response (Junction-to-Ambient) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 10 60010 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 125 °C/W 3. T JM - T A = P DM Z thJA(t) t t t t Notes: 4. Surface Mounted P DM Will Semiconductor Ltd. 6 2017/05/04- Rev.1.0

Package outline dimensions SOT-23-3L Will Semiconductor Ltd. 7 2017/05/04- Rev.1.0 Symbol Dimensions in Millimeters Min. Typ. Max. A - - 1.250 A1 0.000 - 0.150 A2 1.000 1.100 1.200 b 0.300 - 0.500 c 0.140 - 0.200 D 2.820 - 3.026 E 2.600 2.800 3.000 E1 1.500 - 1.726 e 0.950 BSC e1 1.800 1.900 2.000 L 0.300 0.450 0.600 θ 0︒ - 8︒

Will Semiconductor Ltd. 8 2017/05/04- Rev.1.0 WPM3024 Reel Dimensions RD Tape Dimensions W Quadrant Assignments For PIN1 Orientation In Tape RD Reel Dimension W Overall width of the carrier tape 1 P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant User Direction of Feed Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 7inch 13inch 2mm 4mm 8mm 8mm 12mm 16mm