WPM3023 WILLSEMI | Alldatasheet

Document overview

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Technical content

Features

 Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage  Small package SOT-23

Applications

 DC/DC converters  Power supply converters circuit  Load/Power Switching for portable device Http://www.sh-willsemi.com SOT-23 Pin configuration (Top view) PF = Device Code Y = Year W = Week(A~z) Marking Order information Device Package Shipping WPM3023-3/TR SOT 3000/T ape&Reel VDS (V) Typical RDS(on) (mΩ) -30 37 @ VGS=-10V 50 @ VGS=-4.5V D GS

Will Semiconductor Ltd. 2 July.2016- Rev. Absolute Maximum ratings Surface mounted on FR4 Board using 1 in s q pad size, 1oz Cu. Surface mounted on FR4 board using the minimum recommended pad size, 1oz Cu. Repetitive rating, pulse width limited by junction temperature, tp=10µ s, Duty Cycle=1%. Repetitive rating, pulse width limited by junction temperature TJ(MAX) ° C. Thermal resistance ratings Parameter Symbol Typical Maximum Unit Junction-to-Ambient Thermal Resistance a t ≤ 10 s RθJA 84 102 ° C/W Steady State 120 145 Junction-to-Ambient Thermal Resistance b t ≤ 10 s RθJA 130 160 Steady State 145 190 Junction-to-Case Thermal Resistance Steady State RθJC 60 75 Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 Continuous Drain Current a d TA=25° C ID -3.9 -3.3 Maximum Power Dissipation a d TA=25° C PD 1.2 0.9 W TA=70° C 0.8 0.6 Continuous Drain Current b d TA=25° C ID -3.1 -2.8 Maximum Power Dissipation b d TA=25° C PD 0.8 0.7 W TA=70° C 0.5 0.4 Pulsed Drain Current c IDM -15.6 A Operating Junction Temperature TJ -55 to 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C 1.0

Will Semiconductor Ltd. 3 July.2016- Rev. Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = -250uA -30 V Zero Gate Voltage Drain Current IDSS VDS =-24V, VGS = 0V -1 uA Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±20V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250uA -1.0 -1.8 -3.0 V Drain-to-source On-resistance RDS(on) VGS = -10V, ID = -4.5A 37 54 mΩ VGS =-4.5V, ID = -4A 50 74 Forward Transconductance gFS VDS = -5 V, ID = -3.3A 4 7 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS VGS = 0 V, f = 1 .0MHz, VDS = -15 V 778 pF Output Capacitance COSS 85 Reverse Transfer Capacitance CRSS 68 T otal Gate Charge QG(TOT) VGS = -4.5 V, VDS = -10 V, ID =-5.0 A 6.8 nC Threshold Gate Charge QG(TH) 0.55 Gate-to-Source Charge QGS 2.5 Gate-to-Drain Charge QGD 2.1 SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) VGS = -10 V, VDD =-15 V, ID=-4A, RG=6Ω 11.2 ns Rise Time tr 4.7 Turn-Off Delay Time td(OFF) 50 Fall Time tf 8 BODY DIODE CHARACTERISTICS Forward Voltage VSD VGS = 0 V, IS = -1A -0.6 -0.75 -1.2 V 1.0

Will Semiconductor Ltd. 4 July.2016- Rev. Typical Characteristics (Ta=25oC, unless otherwise noted) Output characteristics On-Resistance vs. Drain current On-Resistance vs. Junction temperature Transfer characteristics On-Resistance vs. Gate-to-source voltage Threshold voltage vs. Temperature 0 5 10 15 20 VGS=10V VGS=8V VGS=6V IDS-Drain-to-Source Current (A) VDS-Drain-to-Source Voltage(V) VGS=5.5V o C -50 o C 150 o C VDS=-5V -IDS-Drain Source Current(A) -VGS-Gate to Source Voltage(V) 0 1 2 3 VGS=-6V VGS=-4.5V VGS=-3.5V -IDS-Drain to Source Current(A) -VDS-Drain to Source Voltage(V) VGS=-2.5V 5 10 15 20 0.00 0.03 0.06 0.09 0.12 VGS=-10V VGS=-3.5V VGS=-4.5V -RDS(ON)-On Resistance(m) -IDS-Drain to Source Current(A) 2 3 4 5 6 7 8 9 10 0.00 0.04 0.08 0.12 0.16 0.20 RDS(ON)-On-Resistance() -VGS-Gate to Source Voltage (V) ID=-4.5A -50 0 50 100 150 0.6 0.8 1.0 1.2 1.4 1.6 RDSON-On-Resistance(m) Temperature ( o VGS=-10V ID=-4.5A -50 0 50 100 150 0.6 0.8 1.0 1.2 -Gate Threshold Voltage (V) Temperature ( o ID=-250uA 1.0

Will Semiconductor Ltd. 5 July.2016- Rev. Capacitance Single pulse power Body diode forward voltage Safe operating power 0 3 6 9 12 15 200 400 600 800 1000 1200 Ciss Coss Capacitance (pF) -VDS-Drain to Source Voltage (V) Crss F = 1MHZ 0 3 6 9 12 15 Qg(nC) -VGS-Gate to Source Voltage (V) VDS=-10V ID=-5A Ga te Charge Characteristics T=150 o C T=25 o C -ISD-Source to Drain Current (A) -VSD-Source to Drain Voltage (V) 1E-4 1E-3 0.01 0.1 1 10 100 100 Power (W) TJ(MAX)=150 o C TA=25 o C Pulse width (S) 0.1 1 10 100 0.01 0.1 100 -ID-Drain Current (A) Limit by Rdson TA=25 o C Single Pulse 10s DC 100ms 10ms 1ms 100us -VDS-Drain to Source Voltage(V) *VGS>minimum VGS at which RDS(ON) is specified 1.0

Will Semiconductor Ltd. 6 July.2016- Rev. Transient thermal response (Junction-to-Ambient) Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance 0.1 0.01 1 10 60010 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 100 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 145/C0095C/W 3. T JM - T A = P DM Z thJA(t) t t t t Notes: 4. Surface Mounted P DM 1.0

Will Semiconductor Ltd. 7 July.2016- Rev. Package outline dimensions SOT-23 Dimensions In Millimeters Symbol Min. Max. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950 (Typ.) e1 1.800 2.000 L 0.550 (Typ.) L1 0.300 0.500 ș o o 1.0