WPM3012 WILLSEMI | Alldatasheet
Document overview
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- PDF pages: 7
Technical content
Features
z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23
Applications
z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging SOT-23 Pin configuration (Top view) W32* W32 = Device Code * = Month (A~Z) Marking Order information Device Package Shipping WPM3012-3/TR SOT-23 3000/Reel&Tape V DS (V) Rds(on) ( ȍ) 0.058@ V GS =10V -30 0.080@ V GS =4.5V D GS The WPM3012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM3012 is Pb-free and Halogen-free. Http://www.sh-willsemi.com Will Semiconductor Ltd. 1 2015/08/25 – Rev. 1.2
-30 Gate-Source Voltage V GS ±20 V T A =25°C -3.1 -2.9 Continuous Drain Current a T A =70°C I D -2.5 -2.3 A T A =25°C 0.9 0.8 Maximum Power Dissipation a T A =70°C P D 0.6 0.5 W T A =25°C -2.8 -2.6 Continuous Drain Current b T A =70°C I D -2.2 -2.1 A T A =25°C 0.7 0.6 Maximum Power Dissipation b T A =70°C P D 0.5 0.4 W Pulsed Drain Current c I DM -15 A Operating Junction Temperature T J 150 °C Lead Temperature T L 260 °C Storage Temperature Range T stg -55 to 150 Thermal resistance ratings Parameter Symbol Typical Maximum Unit t 10 s 105 130 Junction-to-Ambient Thermal Resistance a Steady State R șJA 120 155 t 10 s 130 160 Junction-to-Ambient Thermal Resistance b Steady State R șJA 145 190 Junction-to-Case Thermal Resistance Steady State R șJC 60 75 °C/W a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width<380μs, Duty Cycle<2% d Maximum junction temperature T J =150°C. Will Semiconductor Ltd. 2 2015/08/25 – Rev. 1.2
Electronics Characteristics (Ta=25 o C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BV DSS V GS = 0 V, I D = -250uA -30 V Zero Gate Voltage Drain Current I DSS V DS = -24V, V GS = 0V -1 uA Gate-to-source Leakage Current I GSS V DS = 0 V, V GS = ±20V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V GS = V DS , I D V GS = -10V, I D = -3.1A 58 68 Drain-to-source On-resistance b, c R DS(on) V GS = -4.5V, I D = -2.8A 80 95 Forward Transconductance g FS V DS = -5 V, I D =-5.0A 8.2 s CAPACITANCES, CHARGES Input Capacitance C ISS 654 Output Capacitance C OSS Reverse Transfer Capacitance C RSS V GS = 0 V, f = 1.0 MHz, V DS = -20V 56 pF Total Gate Charge Q G(TOT) 1.55 Threshold Gate Charge Q G(TH) 2.03 Gate-to-Source Charge Q GS 3.15 Gate-to-Drain Charge Q GD V GS = -10 V, V DS = -15V, I D = -3.1A 12.9 nC SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) 9.6 Rise Time tr 4.0 Turn-Off Delay Time td(OFF) 34.8 Fall Time tf V GS = -10 V, V DS = -15 V, R L =5, R G =15 7.2 ns BODY DIODE CHARACTERISTICS Forward Voltage V SD V GS = 0 V, I S Will Semiconductor Ltd. 3 2015/08/25 – Rev. 1.2
(Ta=25 o C, unless otherwise noted) o Output characteristics Output characteristics On-Resistance vs. Drain current On-Resistance vs. Drain current On-Resistance vs. Junction temperature On-Resistance vs. Junction temperature Transfer characteristics Transfer characteristics On-Resistance vs. Gate-to-Source voltage On-Resistance vs. Gate-to-Source voltage Threshold voltage vs. Temperature Threshold voltage vs. Temperature C, unless otherwise noted) 0123456 0123456 T=125 C T=-50 C T=25 C V DS = -5V DS - Drain Current (A) GS - Gate to Drain Voltage (V) V GS = -4.5V V GS = -10V -50 0 100 150 V GS =-10V I DS =-3.1A R DS(on) - On-Resistance (m Temperature ( -25 0 25 50 75 100 125 150 1.2 1.4 1.6 1.8 2.0 2.2 2.4 I DS = -250uA GS(TH) - Threshold Voltage (V) Temperature ( V GS = -4.0V V GS = -3.0V DS _Drain to Source Current (A) DS _Drain to Source Voltage (V) 2468 1 0 120 160 200 I D =-3.1A R DS(on) - On-Resistance (m GS -Gate to Source Voltage(V) 2468 1 0 1 2 1 4 100 120 V GS =-4.5V V GS =-10V R DS(on) - On-Resistance (m DS -Drain to Source Current (A) Will Semiconductor Ltd. 4 2015/08/25 – Rev. 1.2
Body diode forward voltage Safe operating power Gate Charge Characteristics 0 4 8 12 16 20 200 400 600 800 1000 Crss Cout Cin C-Capacitance (pF) DS - Drain to Source Voltage (V) V GS =0 f=1MHZ 0.2 0.4 0.6 0.8 1.0 T=25 C T=150 C SD - Source to Drain Current (A) SD - Source to Drain Voltage(V) 0369 1 2 1 5 V GS =-10V, I D =-3.1A, V DS =-15V GS -Gate to Source Voltage(V) Qg(nc) 0.01 0.1 1 10 100 1000 Time (s) Power (W) T A = 25 °C V DS - Drain-to-Source Voltage (V) 100 0.1 1 10 100 0.01 - Drain Current (A)I D 0.1 T A = 25 °C Single Pulse 1s ,1 0s DC Limited by R DS(on) BVDSS Limited 10 ms 1m s 100 μs 100 ms Will Semiconductor Ltd. 5 2015/08/25 – Rev. 1.2
Transient thermal response (Junction-to-Ambient) 1 10 100010 100 0.2 0.1 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Duty Cycle = 0.5 Single Pulse 0.02 0.05 t t Notes: P DM 1. Duty Cycle, D = 2. Per Unit Base = R thJA =120 °C/W 3. T JM A DM Z thJA(t) t t 4. Surface Mounted Will Semiconductor Ltd. 6 2015/08/25 – Rev. 1.2
Package outline dimensions SOT-23 Dimensions in millimeter Symbol Min. Typ. Max. A 0.900 1.025 1.150 A1 0.000 0.050 0.100 A2 0.900 0.975 1.050 b 0.300 0.400 0.500 c 0.080 0.115 0.150 D 2.800 2.900 3.000 E 1.200 1.300 1.400 E1 2.250 2.400 2.550 e 0.950TYP e1 1.800 1.900 2.000 L 0.550REF L1 0.300 0.500 © 0e 8e Will Semiconductor Ltd. 7 2015/08/25 – Rev. 1.2