WPM3005 WILLSEMI | Alldatasheet

Document overview

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Technical content

Features

z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT -23-3L

Applications

z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging SOT-23-3L Pin configuration (Top view) W35* W35 = Device Code * = Month (A~Z) Marking Order information Device Package Shipping WPM3005-3/TR SOT -23-3L 3000/Reel&Tape V DS (V) Rds(on) ( ȍ) 0.057@ V GS =̢10.0V 0.057@ V GS =̢10.0V 0.083@ V GS =̢4.5V -30 0.083@ V GS =̢4.5V D GS The WPM3005 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM3005 is Pb-free and Halogen-free. Will Semiconductor Ltd. 1 2015/08/25 – Rev. 1.3 Http://www.sh-willsemi.com

t ” 10 s 65 85 Junction-to-Ambient Thermal Resistance a Steady State R șJA 90 125 t ” 10 s 85 100 Junction-to-Ambient Thermal Resistance b Steady State R șJA 115 140 Junction-to-Case Thermal Resistance Steady State R șJC 40 60 °C/W a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Repetitive rating, pulse width limited by junction temperature, t p =10μs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature T J =150°C. Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS -30 Gate-Source Voltage V GS ±20 V T A =25°C -4.1 -3.4 Continuous Drain Current a T A =70°C I D -3.3 -2.7 A T A =25°C 1.4 1.0 Maximum Power Dissipation a T A =70°C P D 0.9 0.6 W T A =25°C -3.8 -3.2 Continuous Drain Current b T A =70°C I D -3.0 -2.5 A T A =25°C 1.2 0.8 Maximum Power Dissipation b T A =70°C P D 0.8 0.5 W Pulsed Drain Current c I DM -25 A Operating Junction Temperature T J 150 Lead Temperature T L 260 Storage Temperature Range T stg -55 to 150 Thermal resistance ratings Will Semiconductor Ltd. 2 2015/08/25 – Rev. 1.3

Electronics Characteristics (Ta=25 o C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BV DSS V GS = 0 V, I D = -250uA -30 V Zero Gate Voltage Drain Current I DSS V DS = -24 V, V GS Gate-to-source Leakage Current I GSS V DS = 0 V, V GS = ±20V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V GS = V DS , I D V GS = -10V, I D = -4.1A V GS = -10V, I D = -3.0A V GS = -4.5V, I D = -4.0A Drain-to-source On-resistance R DS(on) V GS = -4.5V, I D = -3.0A Forward Transconductance g FS V DS = -5 V, I D = -4.1A 7.6 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C ISS 670 Output Capacitance C OSS Reverse Transfer Capacitance C RSS V GS = 0 V, f = 1.0 MHz, V DS -15 V pF Total Gate Charge Q G(TOT) 14.0 Threshold Gate Charge Q G(TH) 1.31 Gate-to-Source Charge Q GS 2.0 Gate-to-Drain Charge Q GD V GS = -10 V, V DS = -15 V, I D = -4.1 A 2.45 nC SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) 6.8 Rise Time tr 3.2 Turn-Off Delay Time td(OFF) 25.2 Fall Time tf V GS = -10 V, V DS = -15V, R L =5.0 Ÿ, R G =15 Ÿ 4.4 ns BODY DIODE CHARACTERISTICS Forward Voltage V SD V GS = 0 V, I S = 0V -1 uA 57 60 57 60 83 90 83 90 Will Semiconductor Ltd. 3 2015/08/25 – Rev. 1.3

(Ta=25 o C, unless otherwise noted) Output characteristics On-Resistance vs. Drain current On-Resistance vs. Junction temperature 0123456 T=125 C T=-50 C V DS = -5V DS - Drain Current (A) GS - Gate to Drain Voltage (V) Transfer characteristics On-Resistance vs. Gate-to-Source voltage Threshold voltage vs. Temperature T=25 C 0123456 V GS = -4.5V V GS = -10V V GS = -4.0V V GS = -3.0V DS _Drain to Source Current (A) DS _Drain to Source Voltage (V) 2468 1 0 120 160 200 I D =-4.1A R DS(on) - On-Resistance (m GS -Gate to Source Voltage(V) 246 -50 0 50 100 150 V GS =-10V I DS =-4.1A R DS(on) - On-Resistance (m Temperature ( -25 0 25 50 75 100 125 150 1.2 1.4 1.6 1.8 2.0 2.2 2.4 I DS = -250uA GS(TH) - Threshold Voltage (V) Temperature ( 81 0 1 2 1 4 100 120 V GS =-4.5V V GS =-10V R DS(on) - On-Resistance (m DS -Drain to Source Current (A) Will Semiconductor Ltd. 4 2015/08/25 – Rev. 1.3

0.2 0.4 0.6 0.8 1.0 Body diode forward voltage Safe operating power Gate Charge Characteristics T=25 C T=150 C SD - Source to Drain Current (A) SD - Source to Drain Voltage(V) 0 4 8 1 21 62 0 200 400 600 800 1000 Crss Cout Cin C-Capacitance (pF) DS - Drain to Source Voltage (V) V GS =0 f=1MHZ 0 5 10 15 20 V DS =-15V,I DS =-5A V GS -Gate Voltage Q g (nC) 0.1 1.0 10.0 100.0 0.1 1 10 100 DS (Volts) D (Amps) 100 P s 10ms 1ms 0.1s 10s D C R DS(ON) limited T J(Max) =150°C T A =25°C 10Ps Power (W) Time (s) 1 100 6001010 Will Semiconductor Ltd. 5 2015/08/25 – Rev. 1.3

Normalized Thermal Transient Impedance, Junction-to-Ambient 1 10 60010 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 90 °C/W 3. T JM - T A = P DM Z thJA(t) t t t t Notes: 4. Surface Mounted P DM Will Semiconductor Ltd. 6 2015/08/25 – Rev. 1.3

Package outline dimensions SOT-23-3L Dimensions in millimeter Symbol Min. Typ. Max. A 1.050 1.150 1.250 A1 0.000 0.050 0.100 A2 1.050 1.100 1.150 b 0.300 0.400 0.500 c 0.100 0.150 0.200 D 2.820 2.920 3.020 E 1.500 1.600 1.700 E1 2.650 2.800 2.950 e 0.950(BSC) e1 1.800 1.900 2.000 L 0.300 0.450 0.600 © 0e 8e Will Semiconductor Ltd. 7 2015/08/25 – Rev. 1.3