WPM3004 WILLSEMI | Alldatasheet
Document overview
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- PDF pages: 7
Technical content
Features
z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOP-8L
Applications
z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging Http//:www.willsemi.com SOP-8L Pin configuration (Top view) WPM3004 = Device Code YY = Year WW = Week Marking Order information V DS (V) Rds(on) ( ȍ) 0.053@ V GS =̢10.0V 0.053@ V GS =̢10.0V 0.079@ V GS =̢4.5V -30 0.079@ V GS =̢4.5V D GS 768 23 4 SS D D D Device Package Shipping WPM3004-8/TR SOP-8L 4000/Tape&Reel Will Semiconductor Ltd. 1 July,2018- Rev.1.4
t 10 s 43 61 Junction-to-Ambient Thermal Resistance a Steady State R șJA 74 103 t 10 s 64 85 Junction-to-Ambient Thermal Resistance b Steady State R șJA 95 125 Junction-to-Case Thermal Resistance Steady State R șJC 33 40 °C/W a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Repetitive rating, pulse width limited by junction temperature, t p =10μs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature T J =150°C. Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS -30 Gate-Source Voltage V GS ±20 V T A =25°C -5.0 -3.8 Continuous Drain Current a T A =70°C I D -4.0 -3.1 A T A =25°C 2.0 1.2 Maximum Power Dissipation a T A =70°C P D 1.3 0.7 W T A =25°C -4.2 -3.5 Continuous Drain Current b T A =70°C I D -3.4 -2.8 A T A =25°C 1.4 1.0 Maximum Power Dissipation b T A =70°C P D 0.9 0.6 W Pulsed Drain Current c I DM -22 A Operating Junction Temperature T J 150 Lead Temperature T L 260 Storage Temperature Range T stg -55 to 150 Thermal resistance ratings Will Semiconductor Ltd. 2 July,2018- Rev.1.4
Electronics Characteristics (Ta=25 o C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BV DSS V GS = 0 V, I D = -250uA -30 V Zero Gate Voltage Drain Current I DSS V DS = -24 V, V GS Gate-to-source Leakage Current I GSS V DS = 0 V, V GS = ±20V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V GS = V DS , I D V GS = -10V, I D = -5.0A V GS = -10V, I D = -3.0A V GS = -4.5V, I D = -4.0A Drain-to-source On-resistance R DS(on) V GS = -4.5V, I D = -3.0A Forward Transconductance g FS V DS = -5 V, I D = -5.0A 7.6 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C ISS 670 Output Capacitance C OSS Reverse Transfer Capacitance C RSS V GS = 0 V, f = 1.0 MHz, V DS -15 V pF Total Gate Charge Q G(TOT) 14.0 Threshold Gate Charge Q G(TH) 1.31 Gate-to-Source Charge Q GS 2.0 Gate-to-Drain Charge Q GD V GS = -10 V, V DS = -15 V, I D = -5.0 A 2.45 nC SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) 6.8 Rise Time tr 3.2 Turn-Off Delay Time td(OFF) 25.2 Fall Time tf V GS = -10 V, V DS = -15V, R L =5.0 , R G =15 4.4 ns BODY DIODE CHARACTERISTICS Forward Voltage V SD V GS = 0 V, I S = 0V -1 uA 53 60 53 60 79 90 79 90 Will Semiconductor Ltd. 3 July,2018- Rev.1.4
(Ta=25 o C, unless otherwise noted) Output characteristics On-Resistance vs. Drain current On-Resistance vs. Junction temperature 0123456 T=125 C T=-50 C V DS = -5V DS - Drain Current (A) GS - Gate to Drain Voltage (V) Transfer characteristics On-Resistance vs. Gate-to-Source voltage Threshold voltage vs. Temperature T=25 C 0123456 V GS = -4.5V V GS = -10V V GS = -4.0V V GS = -3.0V DS _Drain to Source Current (A) DS _Drain to Source Voltage (V) 2468 1 0 120 160 200 I D =-5A R DS(on) - On-Resistance (m GS -Gate to Source Voltage(V) 2468 1 0 1 2 1 4 100 120 V GS =-4.5V -50 0 50 100 150 V GS =-10V I DS =-5A R DS(on) - On-Resistance (m Temperature ( -25 0 25 50 75 100 125 150 1.2 1.4 1.6 1.8 2.0 2.2 2.4 I DS = -250uA GS(TH) - Threshold Voltage (V) Temperature ( V GS =-10V R DS(on) - On-Resistance (m DS -Drain to Source Current (A) Will Semiconductor Ltd. 4 July,2018- Rev.1.4
0.2 0.4 0.6 0.8 1.0 Body diode forward voltage Safe operating power Gate Charge Characteristics T=25 C T=150 C SD - Source to Drain Current (A) SD - Source to Drain Voltage(V) 0 4 8 1 21 62 0 200 400 600 800 1000 Crss Cout Cin C-Capacitance (pF) DS - Drain to Source Voltage (V) V GS =0 f=1MHZ 0 5 10 15 20 V DS =-15V,I DS =-5A V GS -Gate Voltage Q g (nC) Single Pulse Power (Junction-to-Ambient) Power (W) Time (s) 1 1000 1010 100 0.1 1.0 10.0 100.0 0.1 1 10 100 DS (Volts) D (Amps) 100 P s 10ms 1ms 0.1s 10s D C R DS(ON) limited T J(Max) =150°C T A =25°C 10Ps Will Semiconductor Ltd. 5 July,2018- Rev.1.4
0.01 0.1 Pulse Width (s) Normalized Maximum Transient Thermal Impedance Z TJA Normalized Transient Thermal Resistance Single Pulse D=T on T J,PK A DM TJA TJA R TJA =74°C/W T on T P D In descending order Will Semiconductor Ltd. 6 July,2018- Rev.1.4
Package outline dimensions SOP-8L Dimensions in millimeter Symbol Min. Typ. Max. A 1.350 1.550 1.750 A1 0.100 0.175 0.250 A2 1.350 1.450 1.550 b 0.330 0.420 0.510 c 0.170 0.210 0.250 D 4.700 4.900 5.100 E 3.800 3.900 4.000 E1 5.800 6.000 6.200 e 1.270(BSC) L 0.400 0.835 1.270 © 0e 8e Will Semiconductor Ltd. 7 July,2018- Rev.1.4