WPM2341 WILLSEMI | Alldatasheet

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Technical content

Features

z Higher Efficiency Extending Battery Life z Miniature SOT23-3 Surface Mount Package Super high density cell design for extremely low RDS (ON)

Applications

Power Management in Portable, Battery Powered Products Marking: pin connections : Order information PartNumber Package Shipping WPM2341Ͳ3/TR SOT23-3 3000Tape&Reel PïChannel SOT 23-3 W 41= Specific Device Code Z = Date Code W41Z 1 2 Gate Source Drain G S D Top View z z z z ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Unit Drain-Source Voltage V DS -20 Gate-Source Voltage V GS ± 8 V T A Continuous Drain Current J = 150 °C) a T A =80°C I D Pulsed Drain Current I DM -20 Continuous Source Current (Diode Conduction) a I S A T A =25°C 1.25 0.75 Maximum Power Dissipation a T A =80°C P D W Operating Junction and Storage Temperature Range T J , T stg - 55 to 150 °C Surface Mounted on FR4 Board using 1 in sq pad size,2oz Cu. =25°C -4.3 -3.5 -3.2 -2.5 -1.7 -1 0.7 0.42 Http://www.sh-willsemi.com Will Semiconductor Ltd. 1 2015/08/25 – Rev. 1.9

MOSFET ELECTRICAL CHARACTERISTICS ć unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS = 0V,I D = -250ȝA -20 V Zero Gate Voltage Drain Current I DSS V DS =-16V,V GS = 0V -1 ȝA Gate –Source leakage current I GSS V GS = f DS = 0V f100 nA On Characteristics Gate Threshold Voltage V GS(th) V GS = V DS , I D =-250ȝA -0.63 V V GS = -4.5V, I D = -3.3Am ȍ Static Drain-Source On-Resistance R DS(on) V GS = -2.5V,I D = -2.8 Am ȍ Forward Transconductance g FS V DS = -5 V, I D = -3.3A 3.0 S Dynamic Characteristics Input Capacitance C iss 700 pF Output Capacitance C oss 160 pF Reverse Transfer Capacitance C rss V DS = -6 V, V GS = 0V, f = 1.0 MHz 120 pF Switching Characteristics Turn-On Delay Time t d(on) 25 ns Turn-On Rise Time t r 55 ns Turn-Off Delay Time t d(off) 90 ns Turn-Off Fall Time t f V GS = -4.5V, V DD = -6 V, I D = -1.0A, R G =6.0ȍ, 60 ns Total Gate Charge Q G(TOT) 81 3 nC Threshold gate charge Q G(TH) 0.2 nC Gate-Source Charge Q GS 1.2 nC Gate-Drain Charge Q GD V DS = -6 V,I D = -3.3A, V GS =-4.5V 2.2 nC Drain-Source Diode Characteristics and Maximun Ratings Forward Diode Voltage V SD V GS = 0V,I S = -1.6 8 V WPM2341 -1.00-0.35 6152 7165 A -0. J =25 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t ” 5 s 75 100 Junction-to-Ambient Thermal Resistance b Steady State R șJA °C/W Surface Mounted on FR4 Board using 1 in sq pad size, 2oz Cu. 125 165 ,V8 V Will Semiconductor Ltd. 2 2015/08/25 – Rev. 1.9

J = 25°C unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge 012345 V GS =-5 thru -2.5 V -1 V -1.5 V DS - Drain-to-Source Voltage (V) - Drain Current (A)-I D -2 V 0.00 0.02 0.04 0.06 0.08 0.10 0 4 8 12 16 20 V GS =-4.5 V V GS =-2.5 V - On-Resistance (Ω)R DS(on) D - Drain Current (A) V DS =-6 V I D =-3.3 A - Gate-to-Source Voltage (V) Q g - Total Gate Charge (nC) GS Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 25 °C 125 °C GS - Gate-to-Source Voltage (V) - Drain Current (A)-I D T C = - 55 °C 150 300 450 600 750 900 0 4 8 12 16 20 C rss C oss C iss DS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 50 - 25 0 25 50 75 100 125 150 V GS =-4.5 V I D =-3.3 A T J - Junction Temperature (°C) (Normalized) - On-ResistanceR DS(on) 02468 1 0 Will Semiconductor Ltd. 3 2015/08/25 – Rev. 1.9

J = 25°C unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 1.0 1.2 0.1 T J = 150 °C SD - Source-to-Drain Voltage (V) - Source Current (A)-I S T J = 25 °C - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 I D = -250 μA Variance (V)V GS(th) T J - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.03 0.06 0.09 0.12 0.15 012345 I D =-3.3 A - On-Resistance (Ω)R DS(on) GS - Gate-to-Source Voltage (V) I D = - 2 A 0.01 10 6000.1 Power (W) Time (s) 100 T A = 25 °C Safe Operating Area 100 0.1 1 10 100 0.01 T A = 25 °C Single Pulse - Drain Current (A)-I D P(t) = 10 DC 0.1 I D(on) Limited R DS(on) * Limited by BVDSS Limited P(t) = 1 P(t) = 0.1 P(t) = 0.01 P(t) = 0.001 P(t) = 0.0001 I DM Limited V DS - Drain-to-Source Voltage (V) GS > minimum V GS at which R DS(on) is specified Will Semiconductor Ltd. 4 2015/08/25 – Rev. 1.9

J = 25°C unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 1 10 60010 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 100 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 125 °C/W 3. T JM - T A = P DM Z thJA(t) t t t t Notes: 4. Surface Mounted P DM Will Semiconductor Ltd. 5 2015/08/25 – Rev. 1.9

Power Dissipation Characteristics 1 .T h ep a c k a g eo fW P M 2 3 4 1i sS O T 2 3 - 3 ,s u r f a c em o u n t e do nF R 4B o a r du s i n g1i ns qp a ds i z eˈ 2o zC uˈR șJA is 125 ć/W. 2. The power dissipation P D is based on T J(MAX) =150°C, and the relation between T J and P D is T J a R șJA D , the maximum power dissipation is determined by R șJA 3. The R șJA is the thermal impedance from junction to ambient, using larger PCB pad size can get smaller R șJA and result in larger maximum power dissipation. 125 ć/W when mounted on a1i n pad of 2 oz copper. WPM2341 Welding temperature curve Will Semiconductor Ltd. 6 2015/08/25 – Rev. 1.9

0LQ 0D[ 0LQ 0D[ A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 1.500 1.700 0.059 0.067 E1 2.650 2.950 0.104 0.116 e e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 ș 0° 8° 0° 8° 6\\PERO 'LPHQVLRQV,Q0LOOLPHWHUV 'LPHQVLRQV,Q,QFKHV 0.950(BSC) 0.037(BSC) Will Semiconductor Ltd. 7 2015/08/25 – Rev. 1.9