WPM2065 WILLSEMI | Alldatasheet

Document overview

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Technical content

Features

 Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  HBM ESD protection > 4kV  Small package DFN2X2-6L

Applications

 Driver for Relay, Solenoid, Motor, LED etc.  DC-DC converter circuit  Power Switch  Load Switch  Charging Http://www.sh-willsemi.com DFN2X2-6L Pin configuration (Top view) 2065 = Device Code YY = Year WW = Week Marking Order information Device Package Shipping WPM2065-6/TR DFN2X2-6L 3000/Reel&Tape V DS (V) Typical Rds(on) ( Ω) -20 0.017@ V GS -4.5V 0.022@ V GS -2.5V 0.032@ V GS -1.8V ESD Rating: 4000V HBM D D G S D D D D S D G D D S The WPM2065 is P-Channel enhancement MOS Field Effect Transisto r. Uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2065 is Pb-free and Halogen-free.

Will Semiconductor Ltd. 2 2014/9/1 – Rev. 1.2 Absolute Maximum ratings Thermal resistance ratings a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width<380µs, Duty Cycle<2% d Maximum junction temperature T J =150°C. Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS -20 VGate-Source Voltage V GS Continuous Drain Current ad T A =25°C I D -6.9 -6.2 AT A =70°C -5.5 -5.0 Maximum Power Dissipation ad T A =25°C P D 1.7 1.4 WT A =70°C 1.1 0.9 Continuous Drain Current bd T A =25°C I D -5.5 -4.4 AT A =70°C -4.4 -3.5 Maximum Power Dissipation bd T A =25°C P D 1.1 0.7 WT A =70°C 0.7 0.4 Pulsed Drain Current c I DM -28 A Operating Junction Temperature T J - 5 5t o1 5 0 ° C Lead Temperature T L 260 °C Storage Temperature Range T stg - 5 5t o1 5 0 ° C Parameter Symbol Typical Maximum Unit Junction-to-Ambient Thermal Resistance a t ≤ 10 s R θJA 57 72 °C/W Steady State 71 90 Junction-to-Ambient Thermal Resistance b t ≤ 10 s R θJA 89 115 Steady State 126 181 Junction-to-Case Thermal Resistance Steady State R θJC 34 44

Will Semiconductor Ltd. 3 2014/9/1 – Rev. 1.2 Electronics Characteristics (Ta=25 o C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BV DSS V GS =0 V ,I D = -250uA -20 V Zero Gate Voltage Drain Current I DSS V DS =- 1 6 V ,V GS =0 V - 1 u A Gate-to-source Leakage Current I GSS V DS =0V ,V GS =±8V ±5 uA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V GS DS D Drain-to-source On-resistance b, c R DS(on) V GS =- 4 . 5 V ,I D = -6.9A 17 24 mΩV GS = -2.5V, I D = -6.1A 22 29 V GS = -1.8V, I D = -5.3A 32 45 Forward Trans conductance g fs V DS = -5.0V, I D =- 6 . 9 A 5 0 S CAPACITANCES, CHARGES Input Capacitance C ISS V GS =0V , f=1 . 0M H z , V DS =- 1 0V 2026 pFOutput Capacitance C OSS 225 Reverse Transfer Capacitance C RSS 201 Total Gate Charge Q G(TOT) V GS =- 4 . 5V , V DD =- 1 0V , I D =- 6 . 9A nCThreshold Gate Charge Q G(TH) 2.5 Gate-to-Source Charge Q GS Gate-to-Drain Charge Q GD SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) V GS =- 4 . 5V , V DD =- 1 0V , R L =3 Ω, R G =6 Ω nsRise Time tr 76 Turn-Off Delay Time td(OFF) 284 Fall Time tf 244 BODY DIODE CHARACTERISTICS Forward Voltage V SD V GS =0V ,I S

Will Semiconductor Ltd. 4 2014/9/1 – Rev. 1.2 V GS =-1.8V V GS =-1.5V V GS =-2.5V V GS =-3.5V D - Drain to Source Current(A) DS - Drain to Source Voltage(V) V GS =-4.5V V DS =-5V T=25 C T=150 C D - Drain to Source Current(A) GS - Gate to Source Voltage(V) T=-55 C -50 0 50 100 150 0.8 1.0 1.2 1.4 1.6 Normalized On-Resistance Temperature( V GS =-4.5V I D =-6.9A -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 Normalized Gate Threshold Voltage Temperature ( I D =-250uA 1234 100 I D =-6.9A T=125 C R DS(on) - On-Resistance(m GS -Gate to Source Voltage(V) T=25 C 2 4 6 8 10 12 14 R DS(on) - On-Resistance(m DS -Drain-to-Source Current(A) V GS =-4.5V V GS =-3.5V V GS =-2.5V V GS =-1.8V V GS =-1.5V Typical Characteristics (Ta=25 o C, unless otherwise noted) Output characteristics On-Resistance vs. Drain current On-Resistance vs. Junction temperature Transfer characteristics On-Resistance vs. Gate-to-Source voltage Threshold voltage vs. Temperature

Will Semiconductor Ltd. 5 2014/9/1 – Rev. 1.2 2 4 6 8 10 12 14 16 18 20 22 GS -Gate Voltage (V) Qg(nC) V DS = -10V I D =-6.9A 1E-4 1E-3 0.01 0.1 1 10 100 1000 100 Power(W) Pulse width (S) T J(Max) =150 C T A =25 C 0 5 10 15 20 100 1000 10000 f=1MHZ V GS =0V Crss Coss CAPACITANCE (pF) DS -Drain to Source Voltage (V) Ciss 0.01 0.1 1 10 100 0.01 0.1 100 Limit by R dson T A =25 C Single Pulse DC 100us 1ms 10ms 100ms 10s Bvdss Limit D - Drain Current (A) DS - Drain Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified T=-55 C T=25 C SD - Source to Drain Voltage (V) SD -Source to Drain Current (A) T=150 C Capacitance Single pulse power Body diode forward voltage Safe operating power Gate charge Characteristics

Will Semiconductor Ltd. 6 2014/9/1 – Rev. 1.2 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 1E-4 1E-3 0.01 0.1 0.5 0.2 0.1 0.05 0.02 0.01 Normalized Effective Transient Thermal Impedance Square Wave Pulse Duration (sec) Single pulse T ransient thermal response (Junction-to-Ambient) P DM t t 1. Duty Cycle, D=t 2. Per Unit Base =R θJA = 71°C/W 3. T JM A DM R θJA 4. Surface Mounted

Will Semiconductor Ltd. 7 2014/9/1 – Rev. 1.2 Package outline dimensions DFN2X2-6L E3 E2 L e b D E Top View Bottom View A3A Side View S y mbol Dimensions in mi l limeter Min. T y Max. A 0.70 0.75 0.80 0.00 0.05 0.203 Ref. D 1.95 2.00 2.05 E 1.95 2.00 2.05 0.85 0.90 0.95 0.75 0.80 0.85 0.25 0.30 0.35 0.56 b 0.25 0.30 0.35 L 0.30 0.35 0.40 e 0.65 BSC.

Will Semiconductor Ltd. 2014/9/1 – Rev. 1.2 Suggested Pad Layout Notes: This recommended land pattern is for reference purposes only. Please consult your manufacturing group to ensure your PCB design guidelines are met.

Will Semiconductor Ltd. TAPE AND REEL INFORMATION Reel Dimensions Tape Dimensions Quadrant Assignments For PIN1 Orientation In Tape RD Reel Dimension W Overall width of the carrier tape 1 P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant User Direction of Feed Reel Dimensions RD W Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 7inch 13inch 2mm 4mm 8mm 8mm 12mm 16mm Will Semiconductor Ltd. 9 2014/9/1 – Rev. 1.2