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Technical content

Features

Supper high density cell design E xcellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package DFN1006

Applications

Driver for Relay, Solenoid, Motor, LED etc. DC DC converter circuit Power Switch Load Switch Cha rging Http :// www. sh willsemi.com DFN1006 Pin configuration (Top view) E = Device Code = Month (A~Z) Marking Order i nformation Device Package Shipping W P M204 B 3/TR DFN1006 10K /Reel&Tape V DS (V) Typical Rds(on) ( Ω 0@ V GS 4.5V 0@ V GS 2.5V @ V GS 1.8V

Will Semiconductor Ltd. 2 Jul, 2015 - Rev.1.0 Absolute Maximum ratings Thermal resistance ratings a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Pulse width<380μs, Single pulse d Maximum junction temperature TJ=150°C. e Pulse test: Pulse width <380 us duty cycle <2%. Parameter Symbol 10 S Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±5 Continuous Drain Current a d TA=25° C ID -0.51 -0.47 A Maximum Power Dissipation a d TA=25° C PD 0.31 0.27 W TA=70° C 0.20 0.17 Continuous Drain Current b d TA=25° C ID -0.48 -0.45 A Maximum Power Dissipation b d TA=25° C PD 0.28 0.24 W TA=70° C 0.18 0.15 Pulsed Drain Current c IDM -1.2 A Operating Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Parameter Symbol Typical Maximum Unit Junction-to-Ambient Thermal Resistance a t ≤ 10 s RθJA 340 395 ° C/W Steady State 390 455 Junction-to-Ambient Thermal Resistance b t ≤ 10 s RθJA 387 441 Steady State 445 505 Junction-to-Case Thermal Resistance Steady State RθJC 240 285

Will Semiconductor Ltd. 3 Jul, 2015 - Rev.1.0 Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = -250uA -20 V Zero Gate Voltage Drain Current IDSS VDS =-16 V, VGS = 0V -1 uA Gate-to-source Leakage Current IGSS VDS = 0 V, VGS =±5V ±5 uA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250uA -0.45 -0.55 -0.85 V Drain-to-source On-resistance e RDS(on) VGS = -4.5V, ID = -0.45A 440 700 mΩ VGS = -2.5V, ID = -0.35A 640 900 VGS = -1.8V, ID = -0.25A 880 1230 Forward Transconductance gFS VDS = -5 V, ID = -0.45A 1.25 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS VGS = 0 V, f =1.0MHz, VDS = -10 V 74.5 pF Output Capacitance COSS 10.8 Reverse Transfer Capacitance CRSS 10.2 Total Gate Charge QG(TOT) VGS = -4.5 V, VDS = -10 V, ID = -0.45A 0.88 nC Threshold Gate Charge QG(TH) 0.07 Gate-to-Source Charge QGS 0.15 Gate-to-Drain Charge QGD 0.28 SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) VGS = -4.5 V, VDS = -10V, ID=-0.45A, RG=6 Ω ns Rise Time tr 140 Turn-Off Delay Time td(OFF) 1500 Fall Time tf 2100 BODY DIODE CHARACTERISTICS Forward Voltage VSD VGS = 0 V, IS = -0.15A -0.5 -0.65 -1.1 V

Will Semiconductor Ltd. 4 Jul, 2015 - Rev.1.0 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 VGS=-4.5V ID=-0.45A Normalized On-Resistance Temperature( o -50 -25 0 25 50 75 100 125 150 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 ID=-250uA Normalized Gate to Source Voltage Temperature( o Typical Characteristics (Ta=25oC, unless otherwise noted) Output characteristics On-Resistance vs. Drain current On-Resistance vs. Junction temperature Transfer characteristics On-Resistance vs. Gate-to-Source voltage Threshold voltage vs. Temperature 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 VGS= -2.5 ~ -5V VGS= -2.0V VGS= -1.5V -IDS- Drain to Source Current (A) -VDS- Drain to Source Voltage (V) 200 400 600 800 1000 VGS=-2.5V VGS=-4.5V RDS(on)- On-Resistance (m) -IDS-Drain to Source Current (A) 300 600 900 1200 T=125C T=-50C T=25C VDS= -5V -IDS - Drain Curr ent (mA) -VGS - Gate to Drain Voltage (V) 200 400 600 800 1000 1200 1400 IDS=-0.45A RDS(on)- On-Resistance (m) -VGS-Gate to Source Voltage(V)

Will Semiconductor Ltd. 5 Jul, 2015 - Rev.1.0 Capacitance Single pulse power Body diode forward voltage Safe operating power 0 2 4 6 8 10 120 VGS=0 f=100KHZ C-Capacitance (pF) -VDS - Drain to Source Voltage (V) Ciss Coss Crss 100 150 200 250 T=25 C T=125 C -ISD - Source to Drain Current (mA) -VSD - Source to Drain Voltage(V) 1E-4 1E-3 0.01 0.1 1 10 100 1000 Power (W) Pulse width (S) TJ(Max) =150C TA=25C 0.1 1 10 100 0.01 0.1 100us 1ms 10ms 100ms 10s DC BVdss Limit TA=25C Single Pulse IDM Limit -ID - Drain to Source Current (A) -VDS - Drain to Source Voltage (V) *VGS>minimum VGS at which RDS(on) is specified Limit by Rdson 0 150 300 450 600 750 900 VDS= -10V ID= - 0.45A -VGS - Gate to Source Voltage(V) Qg(pC)

Will Semiconductor Ltd. 6 Jul, 2015 - Rev.1.0 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 1E-4 1E-3 0.01 0.1 0.2 Duty cycle=0.5 0.1 0.05 0.02 Normalized Effective Transient Thermal Impedance Square Wave Pulse Duration (sec) single pulse Transient thermal response (Junction-to-Ambient) PDM 1. Duty Cycle, D=t1/t2 2. Per Unit Base =RθJA= 455° C/W 3. TJM-TA = PDM RθJA 4. Surface Mounted

Will Semiconductor Ltd. 7 Jul, 2015 - Rev.1.0 Package outline dimensions DFN1006-3L Symbol Dimensions In Millimeters Min Max A 0.36 0.40 A1 - 0.05 A3 0.12 REF D 0.95 1.05 E 0.55 0.65 b1 0.10 0.20 b2 0.20 0.30 L1 0.20 0.30 L2 0.40 0.60 e1 0.35 BSC e2 0.65 BSC