WPM2026 WILLSEMI | Alldatasheet

Document overview

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Technical content

Features

/g122 T rench Technology /g122 Supper high density cell design /g122 Excellent ON resistance for higher DC current /g122 Extremely Low Threshold Voltage /g122 Small package SOT-23

Applications

/g122 Driver for Relay, Solenoid, Motor, LED etc. /g122 DC-DC converter circuit /g122 Power Switch /g122 Load Switch /g122 Charging SOT-23 Pin configuration (Top view) W26* W26 = Device Code * = Month (A~Z) Marking Order information Device Package Shipping WPM2026-3/TR SOT- 23 3000/Reel&Tape V DS (V) Rds(on) (/g525) 0.056@ V GS =̢4.5V 0.069@ V GS =̢2.5V -20 0.086@ V GS =̢1.8V D GS 2 1 The WPM2026 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2026 is Pb-free and Halogen-free. Will Semiconductor Ltd. 1 2016/04/25 – Rev.2.4 Http://www.sh-willsemi.com

-20 Gate-Source Voltage V GS ±/g20/g21 V T A =25°C -3.2 -2.9 Continuous Drain Current a T A =70°C I D -2.6 -2.3 A T A =25°C 0.9 0.8 Maximum Power Dissipation a T A =70°C P D 0.6 0.5 W T A =25°C -2.9 -2.7 Continuous Drain Current b T A =70°C I D -2.3 -2.1 A T A =25°C 0.7 0.6 Maximum Power Dissipation b T A =70°C P D 0.5 0.4 W Pulsed Drain Current c I DM -12 A Operating Junction Temperature T J 150 °C Lead Temperature T L 260 °C Storage Temperature Range T stg -55 to 150 °C Thermal resistance ratings Parameter Symbol Typical Maximum Unit t /g148 10 s 105 130 Junction-to-Ambient Thermal Resistance a Steady State R /g537JA 120 155 t /g148 10 s 130 160 Junction-to-Ambient Thermal Resistance b Steady State R /g537JA 145 190 Junction-to-Case Thermal Resistance Steady State R /g537JC 40 60 °C/W a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Repetitive rating, pulse width limited by junction temperature, t p =10μs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature T J =150°C. Will Semiconductor Ltd. 2 2016/04/25 – Rev.2.4

Electronics Characteristics (Ta=25 o C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BV DSS V GS = 0 V, I D = -250uA -20 V Zero Gate Voltage Drain Current I DSS V DS =-16 V, V GS = 0V -1 uA Gate-to-source Leakage Current I GSS V DS = 0 V, V GS = ±/g20/g21V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V GS = V DS , I D V GS = -4.5V, I D = -3.2A 56 65 V GS = -2.5V, I D = -2.8A 69 81 Drain-to-source On-resistance R DS(on) V GS = -1.8V, I D = -2.3A 86 110 m/g159 Forward Transconductance g FS V DS = -5 V, I D = -3.6A 10 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C ISS 1130 Output Capacitance C OSS 120 Reverse Transfer Capacitance C RSS V GS = 0 V, f = 1.0 MHz, V DS -10 V 115 pF Total Gate Charge Q G(TOT) Threshold Gate Charge Q G(TH) 0.6 Gate-to-Source Charge Q GS 1.3 Gate-to-Drain Charge Q GD V GS = -4.5 V, V DS = -10 V, I D = -2.7A 2.7 nC SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) 16 Rise Time tr 20 Turn-Off Delay Time td(OFF) 65 Fall Time tf V GS = -4.5 V, V DD = -10 V, R L =3.5 /g159, R G =6 /g159 ns BODY DIODE CHARACTERISTICS Forward Voltage V SD V GS = 0 V, I S Will Semiconductor Ltd. 3 2016/04/25 – Rev.2.4

(Ta=25 o C, unless otherwise noted) 012345 VGS=-3.0 ~ -4.5V VGS=-2.0V VGS=-2.5V VGS=-1.5V Output characteristics On-Resistance vs. Drain current On-Resistance vs. Junction temperature V DS = -5V T=125 o C Transfer characteristics On-Resistance vs. Gate-to-Source voltage Threshold voltage vs. Temperature DS -Drain-to-Source Current (A) DS -Drain-to-Source Voltage(V) T=25 o C T=-50 o C DS -Drain to Source Current(A) GS -Gate-to-Source Voltage(V) VGS=-1.0V 02468 1 0 100 120 V GS =-4.5V V GS =-2.5V R DS(on) - On-Resistance(m /g58 DS -Drain-to-Source Current(A) I DS =-3.2A I DS =-2.0A R DS(on) - On-Resistance (m /g58 GS -Gate-to-Source Voltage(V) - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 V GS =-4.5V,ID=-3.2A R DS(on) - On-Resistance (m /g58 Temperature( o -50 -25 0 25 50 75 100 125 150 0.3 0.4 0.5 0.6 0.7 0.8 IDS=-250uA GS(TH) Gate Threshold Voltage (V) Temperature ( o Will Semiconductor Ltd. 4 2016/04/25 – Rev.2.4

Body diode forward voltage Safe operating area Transient thermal response (Junction-to-Ambient) 048 12 16 20 250 500 750 1000 1250 1500 1750 V GS =0V F=1MHz Ciss Coss Crss C - Capacitance(pF) DS Drain-to-Source Voltage (V) 0.3 0.6 0.9 1.2 1.5 T=25oC T=150oC -ISD-Source to Drain Current(A) SD -Source-to-Drain Voltage(V) 0.01 10 6000.1 100 T A = 25/C0095C Time (sec) Power (W) V DS - Drain-to-Source Voltage (V) 100 0.1 1 10 100 0.01 - Drain Current (A)I D 0.1 Limited by r DS(on) T A = 25/C0095C Single Pulse 100/C0032/C0109s, 10 /C0109s 1 ms 10 ms 100 ms dc, 100 s, 10 s, 1 s Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance 0.1 0.01 1 10 60010 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 100 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 155/C0095C/W 3. T JM - T A = P DM Z thJA(t) t t t t Notes: 4. Surface Mounted P DM Will Semiconductor Ltd. 5 2016/04/25 – Rev.2.4

Package outline dimensions SOT-23 Dimensions in millimeter Symbol Min. Typ. Max. A 0.900 1.025 1.150 A1 0.000 0.050 0.100 A2 0.900 0.975 1.050 b 0.300 0.400 0.500 c 0.080 0.115 0.150 D 2.800 2.900 3.000 E 1.200 1.300 1.400 E1 2.250 2.400 2.550 e 0.950TYP e1 1.800 1.900 2.000 L 0.550REF L1 0.300 0.500 © 0 e 8e Will Semiconductor Ltd. 6 2016/04/25 – Rev.2.4

Will Semiconductor Ltd. 7 2016/04/25 – Rev.2.4 X E Y C Z WPM2026 Suggested Land Pattern SOT-23 Dimensions SOT-23(mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35